公开(公告)号：WO1996030729A1

公开(公告)日：1996-10-03

申请号：PCT/JP1996000632

申请日：1996-03-14

Applicant: OHKURA ELECTRIC CO., LTD. ,  MORIMURA, Toshiaki ,  NOGUCHI, Yoshitaka ,  OKA, Satoshi

Inventor： OHKURA ELECTRIC CO., LTD.

IPC: G01G19/00

CPC classification number: G01G19/00 ,  C30B15/28 ,  Y10S367/908

Abstract: The disclosed apparatus weighs a grown crystal (3) that is being pulled from melt thereof. The lower end of a rope (4) of known weight is connected to the crystal (3), while the upper end of the rope (4) is connected to the drum (6) of a rope-winding unit (5). The rope-winding unit (5) includes a driver (7) coupled to the drum (6) so as to rotate the drum (6) and wind to the rope (4) thereon, and the weight of the rope-winding unit (5) including the drum (6) and driver (7) is known. At least one weight sensor (9) is coupled to the rope-winding unit (5) so as to measure the magnitude of gravity acting on the rope-winding unit (5). Whereby, the weight of the grown crystal (3) is determined by subtracting the sum of the known weights of the rope (4) and the rope-winding unit (5) from the measured magnitude of the gravity acting on the rope-winding unit (5).

Abstract translation: 所公开的装置称重从其熔体中拉出的生长晶体（3）。 已知重量的绳索（4）的下端连接到晶体（3），而绳索（4）的上端连接到绳索卷绕单元（5）的滚筒（6）。 绳索卷绕单元（5）包括联接到滚筒（6）的驱动器（7），以便使滚筒（6）旋转并卷绕到其上的绳索（4）上，并且绳索卷绕单元 包括滚筒（6）和驱动器（7）的5）是已知的。 至少一个重量传感器（9）联接到绳索卷绕单元（5），以便测量作用在绳索卷绕单元（5）上的重力的大小。 由此，通过从测量的作用在绳索卷绕单元上的重量的大小减去绳索（4）和绳索卷绕单元（5）的已知重量的总和来确定生长的晶体（3）的重量 （5）。

公开(公告)号：WO1991014027A1

公开(公告)日：1991-09-19

申请号：PCT/US1991001153

申请日：1991-02-21

Applicant: MOBIL SOLAR ENERGY CORPORATION

Inventor： MOBIL SOLAR ENERGY CORPORATION ,  MACKINTOSH, Brian, H. ,  ERISS, Lawrence

IPC: C30B15/34

CPC classification number: C30B15/00 ,  C30B15/02 ,  C30B15/28 ,  C30B15/34 ,  C30B29/66 ,  Y10T117/104 ,  Y10T117/1056

Abstract: A control system for controlling the operation of a system (18) for replenishing the melt in the crucible (24) of an apparatus (20) for growing tubular crystalline bodies (22) of a selected material. The melt replenishment system (18) comprises a container (302) for storing solid particles of said selected material and a dispenser (306) for transporting the particles from the container (302) to the crucible (24). The control system controls the rate at which the dispenser (306) transports particles from the container (302) to the crucible (24) based on the weight of the solid particles stored in the container (302), the weight of the crystalline body (22), and the pressure inside the crystalline body (22). Additionally, the control system may be adapted to control the temperature of the crucible heater (26) of the apparatus (20). Compensation is provided by this invention for weight measurement errors that are created by pressure fluctuations within the tubular crystalline body (22).

Abstract translation: 一种用于控制用于补充用于生长所选材料的管状结晶体（22）的装置（20）的坩埚（24）中的熔体的系统（18）的操作的控制系统。 熔体补充系统（18）包括用于储存所述选定材料的固体颗粒的容器（302）和用于将颗粒从容器（302）输送到坩埚（24）的分配器（306）。 控制系统控制分配器（306）基于存储在容器（302）中的固体颗粒的重量，结晶体的重量（306）将颗粒从容器（302）输送到坩埚（24）的速率 22）和晶体内部的压力（22）。 另外，控制系统可以适于控制装置（20）的坩埚加热器（26）的温度。 由本发明提供的用于由管状结晶体（22）内的压力波动产生的重量测量误差的补偿。

公开(公告)号：WO1988008786A1

公开(公告)日：1988-11-17

申请号：PCT/US1988001353

申请日：1988-04-22

Applicant: MOBIL SOLAR ENERGY CORPORATION

Inventor： MOBIL SOLAR ENERGY CORPORATION ,  MACKINTOSH, Brian, H.

IPC: B31B01/60

CPC classification number: C30B15/34 ,  C30B15/00 ,  C30B15/28 ,  C30B29/66

Abstract: A control system for controlling the operation of an apparatus for growing tubular crystalline bodies. The control system comprises a weight sensor (100) for measuring the weight of the crystal, a pressure sensor (102) for measuring the pressure inside the crystal, and a controller (105) coupled to the weight, length and pressure sensors for controlling the operation of the crystal growing apparatus. The controller is coupled to the die heater (26) of the apparatus for controlling the temperature of melt contained in the crucible (24) of the apparatus based on the outputs of the weight, length and pressure sensors. To ensure the wall of the tubular crystalline body is maintained at a substantially uniform thickness, precise measurement of the weight of the body must be made. Compensation is provided by this invention for weight measurement errors that are created by pressure fluctuations within the tubular crystalline body.

公开(公告)号：WO2016204411A1

公开(公告)日：2016-12-22

申请号：PCT/KR2016/005045

申请日：2016-05-12

Applicant: 주식회사 엘지실트론

Inventor： 김윤구

IPC: C30B15/28 ,  C30B29/06

CPC classification number: C30B15/28 ,  C30B29/06

Abstract: 본 발명은 시드 케이블의 흔들림이 발생되더라도 실리콘 융액 계면에서 잉곳의 직경 및 위치를 정확하게 측정할 수 있는 잉곳 성장장치 및 그 성장방법에 관한 것이다. 본 발명에 따른 잉곳 성장장치 및 그 성장방법은 잉곳측정센서와 다른 방향에 이미지 센서를 구비함으로써, 직경측정센서에서 측정된 잉곳의 직경을 이미지 센서에서 측정된 기준 위치의 변화에 따라 보정하여 정확한 잉곳의 직경을 산출할 수 있다.

Abstract translation: 本发明涉及一种锭生长装置及其生长方法，其即使在发生种子电缆的晃动时，也能精确地测量熔融硅表面处的锭的直径和位置。 在根据本发明的锭生长装置及其生长方法中，图像传感器设置在与锭测量传感器的方向不同的方向上，从而可以通过校正锭的直径来精确地计算锭的直径 由直径测量传感器测量的晶锭，取决于参考位置的变化，由图像传感器测量。

公开(公告)号：WO2016108381A1

公开(公告)日：2016-07-07

申请号：PCT/KR2015/008692

申请日：2015-08-20

Applicant: 주식회사 엘지실트론

Inventor： 방인식

IPC: C30B15/28 ,  C30B15/20 ,  C30B29/06

CPC classification number: C30B15/26 ,  C30B15/28 ,  C30B29/06

Abstract: 본 발명은 쵸크랄스키법에 의해 단결정 잉곳을 성장시키면서 성장 계면의 형상을 제어하는 방법으로서, 잉곳의 계면이 목표로 하는 형상이 되도록 단결정 성장 공정의 제어 조건을 설정한 후 단결정 잉곳의 성장을 시작하는 단계, 상기 단결정 잉곳 상부에 배치된 로드셀로, 일정 시간 동안 성장한 잉곳의 중량을 측정하여 측정값을 도출하는 단계, 일정 시간 동안 공정 챔버의 외부에 배치된 직경측정 카메라에 의해 측정된 단결정 잉곳의 직경과, 일정 시간 동안 성장된 단결정 잉곳의 높이를 통해 상기 단결정 잉곳 중량의 이론값을 도출하는 단계, 상기 측정값과 이론값의 차이를 도출하여, 성장 중인 단결정 잉곳의 성장 계면 형상을 예측하는 단계 및 예측된 단결정 잉곳의 계면 형상과 목표로 하는 단결정 잉곳의 계면의 형상을 비교하여, 단결정 잉곳 성장 중의 공정 조건을 변경하는 단계를 포함할 수 있다. 따라서, 성장 중인 잉곳의 계면 형상을 단결정 잉곳의 성장 공정 중에 예측할 수 있어, 공정 조건을 제어하여 목표로 하는 계면 형상으로 실리콘 잉곳을 성장시킬 수 있다.

Abstract translation: 本发明涉及一种通过切克劳斯基法生长单晶锭来控制生长界面形状的方法，并且用于控制生长界面形状的方法包括以下步骤：在设定单晶锭的控制条件之后，开始生长 单晶生长过程，使得晶锭的界面变成目标形状; 通过设置在单晶锭的上部的测力传感器测量生长了预定时间的锭的重量，得出测量值; 通过直径为单晶锭的直径，通过设置在处理室外部的直径测量相机测量预定时间的单晶锭的重量的理论值，以及生长的单晶锭的高度 预定时间; 通过导出测量值和理论值之间的差来预测生长的单晶锭的生长界面形状; 并且通过将单晶锭的预测界面形状与单晶锭的目标界面形状进行比较来改变单晶锭生长过程中的工艺条件。 因此，由于可以在单晶锭的生长过程中预测生长的锭的界面形状，所以可以通过控制工艺条件将硅锭生长成目标界面形状。

公开(公告)号：WO2009067641A3

公开(公告)日：2009-07-09

申请号：PCT/US2008084277

申请日：2008-11-21

Applicant: SAINT GOBAIN CERAMICS ,  MACK III GUILFORD L ,  JONES CHRISTOPHER D ,  PRANADI FERY ,  LOCHER JOHN W ,  ZANELLA STEVEN A ,  BATES HERBERT E

Inventor： MACK III GUILFORD L ,  JONES CHRISTOPHER D ,  PRANADI FERY ,  LOCHER JOHN W ,  ZANELLA STEVEN A ,  BATES HERBERT E

IPC: H01L21/86 ,  C30B15/14 ,  C30B15/20 ,  C30B29/20 ,  H05B6/36

CPC classification number: C30B15/203 ,  C30B15/28 ,  C30B15/34 ,  C30B29/20 ,  C30B29/22

Abstract: A method and apparatus for the production of r-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting an absence of lineage.

Abstract translation: 公开了生产r-平面单晶蓝宝石的方法和设备。 该方法和设备可以使用边缘限定的膜馈送生长技术来生产展现不存在谱系的单晶材料。

公开(公告)号：WO2016051682A1

公开(公告)日：2016-04-07

申请号：PCT/JP2015/004578

申请日：2015-09-09

Applicant: 信越半導体株式会社

Inventor： 増田　直樹 ,  浦野　雅彦

IPC: C30B15/22

CPC classification number: C30B15/28 ,  C30B15/14

Abstract: 　本発明は、融液を収容するルツボを加熱保温するヒーターと、融液から半導体単結晶を引き上げながら育成するワイヤーとを具備する単結晶引上げ装置であって、単結晶引上げ装置は、ワイヤーで半導体単結晶の下端部を融液中に浸漬させて再溶融させた際に、半導体単結晶の重量の変化から、半導体単結晶の下端部の再溶融が完了したことを検出する再溶融検出装置と、ルツボとワイヤーとの間に電圧を印可することで、半導体単結晶と融液との間に電圧を印加しながらワイヤーで半導体単結晶を巻上げた際に、半導体単結晶と融液との間に電流が流れなくなった位置から、半導体単結晶の最下端を検出する最下端検出装置とを具備するものであることを特徴とする半導体単結晶引上げ装置である。これにより、半導体単結晶の再溶融において、浸漬させた結晶の溶融完了を判断するため、目視による確認が必要ない、効果的な再溶融が可能となる。

Abstract translation: 一种单晶拉制装置，包括用于加热坩埚的加热器，用于储存熔化物并保持坩埚保温，以及用于在将半导体单晶从熔体拉起的同时生长半导体单晶的线。 单晶拉制装置的特征在于包括：再熔化检测装置，当半导体单晶的下端浸入半导体单晶的重量的变化时，检测半导体单晶的下端的再熔化的完成 熔体与电线重熔; 以及最低端检测装置，其通过在坩埚和线之间施加电压，在从半导体单晶和熔体之间的电流停止流动的位置检测半导体单晶的最下端， 半导体单晶，同时在半导体单晶和熔体之间施加电压。 结果，半导体单晶的再熔化成为有可能不需要视觉确认来确定浸没晶体熔化完成的有效重熔。

公开(公告)号：WO2014205360A1

公开(公告)日：2014-12-24

申请号：PCT/US2014/043431

申请日：2014-06-20

Applicant: SOUTH DAKOTA BOARD OF REGENTS

Inventor： WANG, Guojian ,  MEI, Dongming

IPC: C30B9/00

CPC classification number: C30B15/28 ,  C30B15/10 ,  C30B29/08

Abstract: In accordance with the present invention, taught is a high purity germanium crystal growth method utilizing a quartz shield inside a steel furnace. The quartz shield is adapted for not only guiding the flow of an inert gas but also preventing the germanium melt from contamination by insulation materials, graphite crucible, induction coil and stainless steel chamber. A load cell provides automatic control of crystal diameter and helps to ensure exhaustion of the germanium melt. The method is both convenient and effective at producing high purity germanium crystals by relatively low skilled operators.

Abstract translation: 根据本发明，教导了在钢炉内使用石英屏蔽的高纯度锗晶体生长方法。 石英屏蔽适用于不仅引导惰性气体的流动，而且还防止锗熔体受绝缘材料，石墨坩埚，感应线圈和不锈钢室的污染。 称重传感器可自动控制晶体直径，有助于确保锗熔体的耗尽。 该方法既方便又有效地通过相对低的熟练操作者生产高纯锗晶体。

公开(公告)号：WO2010056350A2

公开(公告)日：2010-05-20

申请号：PCT/US2009/006114

申请日：2009-11-13

Applicant: CARNEGIE MELLON UNIVERSITY ,  YDSTIE, Birger Erik ,  RANJAN, Sudhir ,  SUKUMAR, Balaji ,  SEETHARAMAN, Sridhar

Inventor： YDSTIE, Birger Erik ,  RANJAN, Sudhir ,  SUKUMAR, Balaji ,  SEETHARAMAN, Sridhar

IPC: C01B33/02 ,  B22D11/00 ,  B22D11/01 ,  B22D21/00

CPC classification number: B22D11/01 ,  C01B33/037 ,  C30B15/002 ,  C30B15/007 ,  C30B15/06 ,  C30B15/14 ,  C30B15/22 ,  C30B15/28 ,  C30B15/30 ,  C30B29/06 ,  C30B29/60 ,  C30B29/64 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

Abstract: A method for producing a solid layer material (42), comprising providing (70) a first layer (30); providing (72) a second liquid layer (32) on the first layer (30); providing (74) a third liquid layer (34) on the second liquid layer (32), wherein the third liquid layer has a melting point that is higher than a melting point of the second liquid layer, and wherein the second liquid layer is between the first and third layers; cooling (76) a surface of the third liquid layer to a temperature less than the melting point of the third liquid layer; forming (78) the solid layer from the third liquid layer while cooling the third layer liquid; and removing (80) the solid layer.

Abstract translation: 一种制备固体层材料（42）的方法，包括提供（70）第一层（30）; 在第一层（30）上提供（72）第二液体层（32）; 在所述第二液体层（32）上提供（74）第三液体层（34），其中所述第三液体层具有高于所述第二液体层的熔点的熔点，并且其中所述第二液体层在 第一和第三层; 将第三液体层的表面冷却（76）至低于第三液体层的熔点的温度; 在冷却第三层液体的同时，从第三液体层形成（78）固体层; 并去除（80）固体层。

公开(公告)号：WO1983002464A1

公开(公告)日：1983-07-21

申请号：PCT/AU1982000216

申请日：1982-12-22

Applicant: THE COMMONWEALTH OF AUSTRALIA care of THE ... ,  SEYMOUR, Robert, Stephen

Inventor： THE COMMONWEALTH OF AUSTRALIA care of THE ...

IPC: C30B15/28

CPC classification number: C30B15/28 ,  Y10T117/1008

Abstract: Diameter control in Czochralski crystal growth is accomplished by progressively measuring both the temperature of the melt by heat sensor (11) and the weight of the residue of the melt in the crucible (2) by weighing means (9). The weight measurement data is fed to microprocessor (11) having a control algorithm. The microprocessor output and temperature measurement output are fed to a three-term temperature controller (13) which regulates the temperature of the melt to thereby control automatically the diameter of the crystal.

Abstract translation: Czochralski晶体生长中的直径控制是通过用热量传感器（11）逐渐测量熔体的温度和通过称重装置（9）在坩埚（2）中的熔体残余物的重量来实现的。 重量测量数据被馈送到具有控制算法的微处理器（11）。 微处理器输出和温度测量输出被馈送到三项温度控制器（13），其调节熔体的温度，从而自动控制晶体的直径。