Abstract:
Sensor and method to detect localised fluctuations of ionic charge indicating events occuring during a chemical reaction, the sensing apparatus comprising an ion sensitive field effect transistor arranged to generate an electrical output signal in response to localised fluctuations of ionic charge at or adjacent the surface of the transistor, and means for detecting the electrical output signal from the field effect transistor is provided with a polymerase linked layer and the chemical reaction is DNA synthesis, and the localised fluctuations of ionic charge indicate the insertion of di-deoxynucleotide triphosphates and deoxynucleotide triphosphates by detecting a change of hydronium ions with a sensitive Si 3 N 4 layer of the field effect transistor.
Abstract:
Use of a pH sensor comprising an ion-sensitive field effect transistor (ISFET) to perform real time detection/ quantification of nucleic acid amplification, e.g. polymerase chain reaction (PCR) nucleic acid amplification, based on detection of protons released during the primer extension phase.
Abstract:
Sensor and method to detect localised fluctuations of ionic charge indicating events occuring during a chemical reaction, the sensing apparatus comprising an ion sensitive field effect transistor arranged to generate an electrical output signal in response to localised fluctuations of ionic charge at or adjacent the surface of the transistor, and means for detecting the electrical output signal from the field effect transistor is provided with a polymerase linked layer and the chemical reaction is DNA synthesis, and the localised fluctuations of ionic charge indicate the insertion of di-deoxynucleotide triphosphates and deoxynucleotide triphosphates by detecting a change of hydronium ions with a sensitive Si 3N4 layer of the field effect transistor.
Abstract translation:用于检测指示化学反应期间发生的事件的离子电荷的局部波动的传感器和方法,所述感测装置包括离子敏感场效应晶体管,其被布置成响应于在或接近所述表面处的离子电荷的局部波动而产生电输出信号 晶体管和用于检测来自场效应晶体管的电输出信号的装置设置有聚合酶连接层,并且化学反应是DNA合成,并且离子电荷的局部波动表示通过检测来分离二脱氧核苷酸三磷酸和脱氧核苷酸三磷酸的插入 水力离子与场效应晶体管的敏感Si 3 N 4层的变化。