Abstract:
One embodiment of the present invention provides a demultiplexer implemented as a nonowire crossbar (3000) or a hybrid nanowire/microscale-signal-line crossbar with resistor-like nanowire junctions. The demultiplexer of one embodiment provides demultiplexing of signals input on k microscale address lines (3003, 3004) to 2 k or fewer nanowires (3006-3009), employing supplemental, internal address lines (3010, 3012) to map 2 k nanowire addresses to a larger, internal, n -bit address space, where n > k . A second demultiplexer embodiment of the present invention provides demultiplexing of signals input on n microscale address lines to 2 k nanowires, with n > k , using 2 k , well-distributed, n -bit external addresses to access the 2 k nanowires. Additional embodiments of the present invention include a method for evaluating different mappings of nanowire address to internal address-spaces of different sizes, or to evaluate mappings of nanowires to external address-spaces of different sizes, metrics for evaluating address mapping and demultiplexer designs, and demultiplexer design methods.
Abstract:
Various embodiments of the present invention include methods for determining nanowire addressing schemes and include microscale/nanoscale electronic devices that incorporate the nanowire addressing schemes for reliably addressing nanowire-junctions within nanowire crossbars (1700). The addressing schemes allow for change in the resistance state, or other physical or electronic state, of a selected nanowire-crossbar junction without changing the resistance state, or other physical or electronic state, of the remaining nanowire-crosbar junctions, and without destruction of either the selected nanowire-crossbar junction or the remaining, non-selected nanowire-crossbar junctions. Additional embodiments of the present invention included nanoscale memory arrays (1700) and other nanoscale electronic devices that incorporate the nanowire-addressing-scheme embodiments of the present invention. Certain of the embodiments of the present invention employ constant-weight codes (1308), a well-known class or error-control-encoding codes, as addressed-nanowire selection voltages applied to microscale output signal lines (1316-1319) of microscale/nanoscale encoder-demultiplexers that are selectively interconnected with a set of nanowires (1310-1315).
Abstract:
One embodiment of the present invention provides a demultiplexer implemented as a nonowire crossbar (3000) or a hybrid nanowire/microscale-signal-line crossbar with resistor-like nanowire junctions. The demultiplexer of one embodiment provides demultiplexing of signals input on k microscale address lines (3003, 3004) to 2 k or fewer nanowires (3006-3009), employing supplemental, internal address lines (3010, 3012) to map 2 k nanowire addresses to a larger, internal, n-bit address space, where n > k. A second demultiplexer embodiment of the present invention provides demultiplexing of signals input on n microscale address lines to 2 k nanowires, with n > k, using 2 k , well-distributed, n-bit external addresses to access the 2 k nanowires. Additional embodiments of the present invention include a method for evaluating different mappings of nanowire address to internal address-spaces of different sizes, or to evaluate mappings of nanowires to external address-spaces of different sizes, metrics for evaluating address mapping and demultiplexer designs, and demultiplexer design methods.