公开(公告)号：WO2011107094A2

公开(公告)日：2011-09-09

申请号：PCT/DE2011075036

申请日：2011-03-03

Applicant: CENTROTHERM PHOTOVOLTAICS AG ,  MUENZER ADOLF ,  TEPPE ANDREAS ,  SCHOENE JAN ,  SCHLOSSER REINHOLD ,  KELLER STEFFEN

Inventor： MUENZER ADOLF ,  TEPPE ANDREAS ,  SCHOENE JAN ,  SCHLOSSER REINHOLD ,  KELLER STEFFEN

IPC: H01L31/0224 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/0547 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/056 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: The invention relates to a method for producing a solar cell (70), wherein a layer stack (74, 76) of dielectric layers (74, 76) is applied (14, 16; 54, 56) to a back of a solar cell substrate (72) and the layer stack (74, 75) is heated and is held (20) at temperatures of at least 700°C during a time period of at least 5 minutes. The invention further relates to a solar cell (70).

Abstract translation: 层堆叠（74;用于制造太阳能电池（70），其特征在于，在太阳能电池基板（72），介电层的层堆叠（74,76）的背面侧（74，76）施加所述的方法（54，56 14，16） 加热75）和用于为至少700℃（20）和太阳能电池（70）的温度，持续至少5分钟保持。

公开(公告)号：WO2012083944A3

公开(公告)日：2012-11-01

申请号：PCT/DE2011075306

申请日：2011-12-09

Applicant: CENTROTHERM PHOTOVOLTAICS AG ,  MUENZER ADOLF ,  TEPPE ANDREAS ,  SCHOENE JAN ,  HEIN MATHIAS ,  KRUEMBERG JENS ,  KRUEMBERG SANDRA

Inventor： MUENZER ADOLF ,  TEPPE ANDREAS ,  SCHOENE JAN ,  HEIN MATHIAS ,  KRUEMBERG JENS ,  KRUEMBERG SANDRA

IPC: H01L31/052 ,  H01L31/0236

CPC classification number: H01L31/0236 ,  H01L31/02363 ,  H01L31/056 ,  Y02E10/52

Abstract: The invention relates to a method for producing a silicon solar cell which is smoothly etched on one side, in which a front and rear side of a silicon substrate are etched (10) to form a smooth texture, a dielectric coating is then applied onto the rear side of the silicon substrate (14, 16), and the front side of the silicon substrate is subsequently textured (20) by means of a texture etching medium. According to the invention, the dielectric coating formed on the rear side of the silicon substrate is used as an etching mask against the texture etching medium.

Abstract translation: 形成一种用于制造单glattgeätzten硅太阳能电池，其特征在于，前侧和硅基板的背面是glattgeätzt（10）的方法，随后通过在硅衬底的背面上的电介质涂层（14，16），并随后在硅衬底的前表面由Texturätzmediums的手段纹理 其中，在所述硅衬底的介电涂层的背面形成用作蚀刻掩模在Texturätzmedium（20）。

公开(公告)号：WO2012083938A3

公开(公告)日：2012-10-18

申请号：PCT/DE2011075252

申请日：2011-10-14

Applicant: CENTROTHERM PHOTOVOLTAICS AG ,  TEPPE ANDREAS ,  MUENZER ADOLF ,  SCHOENE JAN ,  HEIN MATHIAS ,  WINTER PETER

Inventor： TEPPE ANDREAS ,  MUENZER ADOLF ,  SCHOENE JAN ,  HEIN MATHIAS ,  WINTER PETER

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/0527 ,  H01L31/022425 ,  H01L31/056 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: The invention relates to a solar cell (11; 21; 31) comprising a dielectric coating (4) which is disposed on a rear face of the solar cell (11; 21; 31) and is covered at least partially by at least one flat contact (12; 22; 32), wherein a boundary line (14; 24; 34) of the at least one flat contact (12; 22; 32) has at least one recess (16a, 16b; 26a, 26b, 26c). The invention also relates to a method for producing same.

Abstract translation: 太阳能电池（11; 21; 31），包括：在太阳能电池的后侧（11; 21; 31），其设置电介质涂层（4），其至少部分中的至少一个平坦的接触（12; 22; 32）被覆盖，其中的边界线 （14; 24; 34）的至少一个凹部（16A，16B; 26A，26B，26C）具有，以及它们的制备方法，所述至少一个接触区域（; 22 32 12）。

公开(公告)号：WO2011107092A2

公开(公告)日：2011-09-09

申请号：PCT/DE2011075033

申请日：2011-03-03

Applicant: CENTROTHERM PHOTOVOLTAICS AG ,  TEPPE ANDREAS ,  GEIGER MATTHIAS ,  SCHLOSSER REINHOLD ,  MUENZER ADOLF ,  SCHOENE JAN ,  ISENBERG JOERG ,  KUEHN TINO ,  KELLER STEFFEN

Inventor： TEPPE ANDREAS ,  GEIGER MATTHIAS ,  SCHLOSSER REINHOLD ,  MUENZER ADOLF ,  SCHOENE JAN ,  ISENBERG JOERG ,  KUEHN TINO ,  KELLER STEFFEN

IPC: H01L31/0224 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/068 ,  H01L21/02587 ,  H01L21/02675 ,  H01L21/268 ,  H01L31/1804 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

Abstract: The invention relates to a method for doping a semiconductor substrate (50), wherein the semiconductor substrate (50) is heated by irradiation (14) with laser radiation (60) and at the same time dopant from a dopant source (54) is diffused (16) into the semiconductor substrate (50) in heated regions (52), and wherein when the semiconductor substrate (50) is heated by the irradiation (14) with laser radiation (60), a surface portion of the semiconductor substrate (50) that is less than 10% of the total surface of all irradiated regions (62) is melted (18) and recrystallized (20). The invention further relates to a solar cell.

Abstract translation: （50）扩散的一种用于与激光辐射（60），而在被加热的区域（52）从在所述半导体衬底中的掺杂剂源（54）的掺杂剂掺杂的半导体衬底（50），其中所述半导体衬底（50）是通过照射（14）加热方法 （16），并且其中，在所述加热通过辐照（14）利用激光辐射在半导体基板（50）（60）包括一表面的半导体基片的熔融（20）部分（50）（18）和重结晶是小于10％ 所有暴露的区域的总面积（62），以及太阳能电池。