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公开(公告)号:WO1995018455A1
公开(公告)日:1995-07-06
申请号:PCT/JP1994002266
申请日:1994-12-27
Applicant: KABUSHIKI KAISHA KOMATSU SEISAKUSHO , HAJIME, Hirofumi , TAKEDA, Shuichi , KONISHI, Akio , SHISHIBA, Hideki
Inventor: KABUSHIKI KAISHA KOMATSU SEISAKUSHO
IPC: H01C07/04
Abstract: A high precision sintered thermistor body having stable characteristics. An oxide semiconductor for thermistor having a negative resistance-temperature characteristic is composed mainly of Mn and Co and contains 0.1-24 mol % Cu and Ti based on the total amount of the metal components.
Abstract translation: 具有稳定特性的高精度烧结热敏电阻体。 具有负电阻温度特性的热敏电阻用氧化物半导体主要由Mn和Co组成,并且基于金属成分的总量含有0.1-24mol%的Cu和Ti。
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公开(公告)号:WO1991004231A1
公开(公告)日:1991-04-04
申请号:PCT/JP1990001210
申请日:1990-09-20
Applicant: KABUSHIKI KAISHA KOMATSU SEISAKUSHO , TAKEDA, Shuichi; , SHISHIBA, Hideki; , KAJIURA, Takeji;
Inventor: KABUSHIKI KAISHA KOMATSU SEISAKUSHO
IPC: C03B11/00
CPC classification number: C04B35/645 , C03B11/084 , C03B11/086 , C03B2215/06 , C03B2215/22 , C03B2215/26 , C03B2215/72 , C04B35/5805 , C04B35/58064 , C04B35/58071 , C04B35/58078 , Y02P40/57
Abstract: A mold for molding a glass member, wherein the pressing face is formed of a boron composite ceramic composed of (A) at least one M1B ceramic phase (wherein M1 is at least one member selected from among Ni, Cr, V, Nb, Ta, Mo, W and Mn) having an M1/B atomic ratio of 1/1 and (B) at least one group IV metal diboride ceramic phase selected from among TiB¿2?, ZrB2 and HfB2 and/or (Cr, Ni)3B4 ceramic phase, and being excellent in the durability, releasability, molding precision, productivity, etc., and applicable to the molding of a wide variety of glasses.
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公开(公告)号:WO1990015785A1
公开(公告)日:1990-12-27
申请号:PCT/JP1990000766
申请日:1990-06-12
Applicant: KABUSHIKI KAISHA KOMATSU SEISAKUSHO , TAKEDA, Shuichi; , SHISHIBA, Hideki;
Inventor: KABUSHIKI KAISHA KOMATSU SEISAKUSHO
IPC: C04B35/64
CPC classification number: C04B35/645 , C04B35/6455 , C04B35/651
Abstract: A ceramic sinter is produced by utilizing the heat of reaction of the thermit process as the heat source, wherein a preheating step precedes a sintering step, or a mixture of: (A) at least one ceramic powder, (B) at least one nonmetallic powder selected from the group consisting of carbon, boron and silicon powders, and (C) a metal powder and/or a nonmetallic powder other than the above-mentioned powder (B), is used as the raw material. This method gives homogeneous dense ceramic sinter and composite ceramic sinter. Furthermore the fine textures of the sinter and the composition and distribution of the composite ceramic phase can appropriately be controlled thereby.
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