Abstract:
A method for producing a reflective optical component (10) for an EUV projection exposure apparatus, said component having a substrate (12) having a base body (14), and a reflective layer (20) arranged on the substrate (12), wherein the substrate (12) has an optically operative microstructuring (16), comprises the following steps: working the microstructuring (16) into the substrate (12), polishing the substrate (12) after the micro-structuring (16) has been worked into the substrate (12), applying the reflective layer (20) to the substrate (12). A reflective optical component for an EUV projection exposure apparatus correspondingly has a polished surface between the microstructuring and the reflective layer.
Abstract:
An optical integrator for producing a plurality of secondary light sources in an illumination system of a microlithographic projection exposure apparatus comprises a first array of elongated convexly curved first microlenses (112X) that are arranged side by side in a first plane and have first vertex lines (V). The optical integrator further comprises a second array of elongated convexly curved second microlenses (114X; 214X) that are arranged side by side in a second plane and have second vertex lines (V 1 to V 4 ). At least one second vertex line or a portion thereof does not coincide, in a projection along an optical axis of the optical integrator, with any one of the first vertex lines (V) or portions thereof.
Abstract translation:一种用于在微光刻投影曝光装置的照明系统中制造多个次级光源的光学积分器,包括在第一平面中并排设置并具有第一顶点线的第一阵列的细长的凸形弯曲的第一微透镜(112X) V)。 光学积分器还包括细长的凸形弯曲的第二微透镜(114X; 214X)的第二阵列,所述第二阵列在第二平面中并排布置,并且具有第二顶点线(V SUB 1至V 4) SUB>)。 在沿着光学积分器的光轴的投影中,至少一个第二顶点线或其一部分与第一顶点线(V)中的任何一个或其部分不一致。
Abstract:
Als Substrate, die für Spiegel geeignet sind, die bei Wellenlängen im EUV- Wellenlängenbereich eingesetzt werden, werden Substrate (1) mit einem Grundkörper (2) und einer Polierschicht (3) vorgeschlagen, wobei die Polierschicht (3) eine Dicke von weniger als 10 μm und eine quadratische Rauheit von weniger als 0, 5 nm aufweist und der Grundkörper (2) aus einer Aluminiumlegierung hergestellt ist. Auf der Polierschicht (3) des Substrats (1) des EUV-Spiegels (4) ist zudem eine hochreflektierende Schicht (6) vorgesehen.
Abstract:
An illumination system for a microlithographic projection exposure apparatus comprises a light source (30) and an optical integrator (56) . The latter has first optical subelements (561X, 561Y, 562X, 562Y) and produces a plurality of secondary light sources (82) each emitting a light bundle. A condenser (62) effects a superposition of the light bundles in a mask plane (70) . At least one scattering structure (58, 60) comprises a plurality of individually designed second optical subelements that are arranged in front of or behind the secondary light sources. The first and second optical subelements are configured such that optical subelements illuminated with identical irradiance distributions are separated by more than 5 mm.