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公开(公告)号:WO2009140153A3
公开(公告)日:2010-04-01
申请号:PCT/US2009043261
申请日:2009-05-08
Applicant: APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , TAN TIEN FAK , TSUEI LUN
Inventor: LUBOMIRSKY DMITRY , TAN TIEN FAK , TSUEI LUN
IPC: H01L21/683 , H01L21/205 , H01L21/3065 , H01L21/687
CPC classification number: H01L21/67126 , H01L21/6838 , Y10T279/23
Abstract: A wafer pedestal of a semiconductor apparatus is provided. The wafer pedestal is capable of supporting a substrate. The wafer pedestal includes a pedestal having at least one purge opening configured to flow a purge gas and at least one chucking opening configured to chuck the substrate over the pedestal. The pedestal includes a sealing band disposed between the at least one purge opening and the at least one chucking opening. The sealing band is configured to support the substrate.
Abstract translation: 提供半导体装置的晶片基座。 晶片基座能够支撑基板。 晶片基座包括具有至少一个净化开口的基座,该至少一个净化开口构造成流过净化气体;以及至少一个夹紧开口,其构造成将衬底夹在基座上。 基座包括设置在至少一个吹扫开口和至少一个夹紧开口之间的密封带。 密封带构造成支撑基底。
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2.
公开(公告)号:WO2010036657A3
公开(公告)日:2010-07-01
申请号:PCT/US2009057882
申请日:2009-09-22
Applicant: APPLIED MATERIALS INC , TAN TIEN FAK , TSUEI LUN , CHEN SHAOFENG , RABINOVICH FELIX , LUBOMIRSKY DMITRY , HINCKLEY KIMBERLY
Inventor: TAN TIEN FAK , TSUEI LUN , CHEN SHAOFENG , RABINOVICH FELIX , LUBOMIRSKY DMITRY , HINCKLEY KIMBERLY
IPC: H01L21/205 , H01L21/3065
CPC classification number: C23C16/45565 , H01J37/3244 , Y10T29/49401
Abstract: A method for manufacturing a faceplate of a semiconductor apparatus is provided. The method includes selecting a size of a tool in response to a predetermined specification of a predetermined gas parameter. The tool is used to form the holes within the faceplate. A first gas parameter of the holes of the faceplate is measured by an apparatus to determine if the measured first gas parameter of the holes of the faceplate is within the predetermined specification.
Abstract translation: 提供一种制造半导体装置的面板的方法。 该方法包括响应于预定气体参数的预定规格来选择工具的尺寸。 该工具用于在面板内形成孔。 面板的孔的第一气体参数由装置测量以确定面板的孔的测量的第一气体参数是否在预定规格内。
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公开(公告)号:WO2009140153A2
公开(公告)日:2009-11-19
申请号:PCT/US2009/043261
申请日:2009-05-08
Applicant: APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , TAN, Tien, Fak , TSUEI, Lun
Inventor: LUBOMIRSKY, Dmitry , TAN, Tien, Fak , TSUEI, Lun
IPC: H01L21/683 , H01L21/687 , H01L21/3065 , H01L21/205
CPC classification number: H01L21/67126 , H01L21/6838 , Y10T279/23
Abstract: A wafer pedestal of a semiconductor apparatus is provided. The wafer pedestal is capable of supporting a substrate. The wafer pedestal includes a pedestal having at least one purge opening configured to flow a purge gas and at least one chucking opening configured to chuck the substrate over the pedestal. The pedestal includes a sealing band disposed between the at least one purge opening and the at least one chucking opening. The sealing band is configured to support the substrate.
Abstract translation: 提供半导体装置的晶片基座。 晶片基座能够支撑基板。 晶片基座包括具有至少一个净化开口的基座,该至少一个净化开口构造成流过净化气体;以及至少一个夹紧开口,其构造成将基板夹在基座上。 基座包括设置在至少一个吹扫开口和至少一个夹紧开口之间的密封带。 密封带构造成支撑基底。
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公开(公告)号:WO2020146069A1
公开(公告)日:2020-07-16
申请号:PCT/US2019/064834
申请日:2019-12-06
Applicant: APPLIED MATERIALS, INC. , TAN, Tien Fak , SINGH, Saravjeet
Inventor: TAN, Tien Fak , SINGH, Saravjeet , KALITA, Laksheswar , PARK, Soonam , LUBOMIRSKY, Dmitry , LOH, LokKee , KIM, Tae Won
IPC: H01L21/67 , H01L21/3065
Abstract: Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.
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公开(公告)号:WO2019204230A1
公开(公告)日:2019-10-24
申请号:PCT/US2019/027544
申请日:2019-04-15
Applicant: TAN, Tien Fak , SINGH, Saravjeet , LUBOMIRSKY, Dmitry , KIM, Tae Wan , SCHATZ, Kenneth D. , CHO, Tae Seung , LOH, Lok Kee
Inventor: TAN, Tien Fak , SINGH, Saravjeet , LUBOMIRSKY, Dmitry , KIM, Tae Wan , SCHATZ, Kenneth D. , CHO, Tae Seung , LOH, Lok Kee
IPC: H01J37/32
Abstract: An apparatus for distributing plasma products includes first and second electrodes that each include planar surfaces. The first electrode forms first apertures from a first planar surface to a second planar surface; the second electrode forms second apertures from the third planar surface to the fourth planar surface. The electrodes couple through one or more adjustable couplers such that the third planar surface is disposed adjacent to the second planar surface with a gap therebetween, the gap having a gap distance. Each of the adjustable couplers has a range of adjustment. The first and second apertures are arranged such that for at least one position within the ranges of adjustment, none of the first apertures aligns with any of the second apertures to form an open straight-line path extending through both the first and second electrodes, and the gap distance is between 0.005 inch and 0.050 inch.
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6.
公开(公告)号:WO2010036657A2
公开(公告)日:2010-04-01
申请号:PCT/US2009/057882
申请日:2009-09-22
Applicant: APPLIED MATERIALS, INC. , TAN, Tien, Fak , TSUEI, Lun , CHEN, Shaofeng , RABINOVICH, Felix , LUBOMIRSKY, Dmitry , HINCKLEY, Kimberly
Inventor: TAN, Tien, Fak , TSUEI, Lun , CHEN, Shaofeng , RABINOVICH, Felix , LUBOMIRSKY, Dmitry , HINCKLEY, Kimberly
IPC: H01L21/205 , H01L21/3065
CPC classification number: C23C16/45565 , H01J37/3244 , Y10T29/49401
Abstract: A method for manufacturing a faceplate of a semiconductor apparatus is provided. The method includes selecting a size of a tool in response to a predetermined specification of a predetermined gas parameter. The tool is used to form the holes within the faceplate. A first gas parameter of the holes of the faceplate is measured by an apparatus to determine if the measured first gas parameter of the holes of the faceplate is within the predetermined specification.
Abstract translation: 提供了一种用于制造半导体装置的面板的方法。 该方法包括响应于预定气体参数的预定规格来选择工具的尺寸。 该工具用于在面板内形成孔。 面板的孔的第一气体参数由设备测量以确定面板的孔的测量的第一气体参数是否在预定的规格内。 p>
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