公开(公告)号：WO2014093309A1

公开(公告)日：2014-06-19

申请号：PCT/US2013/074064

申请日：2013-12-10

Applicant: APPLIED MATERIALS, INC.

Inventor： PARKHE, Vijay D. ,  NARENDRNATH, Kadthala Ramaya

IPC: H01L21/683 ,  H01L21/3065

CPC classification number: H01L21/67109 ,  H01J37/32715 ,  H01L21/6831 ,  Y10T156/10 ,  Y10T279/23

Abstract: A substrate support assembly comprises a ceramic body and a thermally conductive base bonded to a lower surface of the ceramic body. The substrate support assembly further comprises a protective layer metal bonded to an upper surface of the ceramic body, wherein the protective layer is a bulk sintered ceramic article.

Abstract translation: 衬底支撑组件包括陶瓷体和结合到陶瓷体的下表面的导热底座。 衬底支撑组件还包括结合到陶瓷体的上表面的保护层金属，其中保护层是块状烧结陶瓷制品。

公开(公告)号：WO2013089911A1

公开(公告)日：2013-06-20

申请号：PCT/US2012/060315

申请日：2012-10-15

Applicant: APPLIED MATERIALS, INC.

Inventor： TODOROW, Valentin N. ,  BANNA, Samer ,  YOUSIF, Imad ,  WANG, Albert ,  LERAY, Gary

IPC: H05H1/34 ,  H05H1/46 ,  H01L21/3065

CPC classification number: H01L21/6833 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/6831 ,  H02N13/00 ,  Y10T279/23

Abstract: Process kit components for use with a substrate support of a process chamber are provided herein. In some embodiments, a process kit ring may include a ring shaped body having an outer edge, an inner edge, a top surface and a bottom, wherein the outer edge has a diameter of about 12.473 inches to about 12.479 inches and the inner edge has a diameter of about 11.726 inches to about 11.728 inches, and wherein the ring shaped body has a height of about 0.116 to about 0.118 inches; and a plurality of protrusions disposed on the top surface of the ring shaped body, each of the plurality of protrusions disposed symmetrically about the ring shaped body.

Abstract translation: 本文提供了与处理室的基板支撑件一起使用的工艺套件组件。 在一些实施例中，处理套件环可以包括具有外边缘，内边缘，顶表面和底部的环形主体，其中外边缘具有约12.473英寸至约12.479英寸的直径，并且内边缘具有 约11.726英寸至约11.728英寸的直径，并且其中所述环形体具有约0.116至约0.118英寸的高度; 以及设置在所述环形体的上表面上的多个突起，所述多个突起中的每一个围绕所述环形体对称设置。

公开(公告)号：WO2010120983A2

公开(公告)日：2010-10-21

申请号：PCT/US2010/031170

申请日：2010-04-15

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES ,  STONE, Dale, K. ,  STONE, Lyudmila ,  PETRY, Klaus ,  SUURONEN, David ,  BLAKE, Julian, G.

Inventor： STONE, Dale, K. ,  STONE, Lyudmila ,  PETRY, Klaus ,  SUURONEN, David ,  BLAKE, Julian, G.

IPC: H01L21/265 ,  H01L21/687

CPC classification number: H01L21/6831 ,  H01L21/68742 ,  Y10T29/49998 ,  Y10T279/23

Abstract: An electrostatic clamp, which more effectively removes built up charge from a substrate prior to and during removal, is disclosed. Currently, the lift pins and ground pins are the only mechanisms used to remove charge from the substrate after implantation. The present discloses describes a clamp having one of more additional Sow resistance paths to ground. These additional conduits allow built up charge to be dissipated prior to and during the removal of the substrate from the clamp. By providing sufficient charge drainage from the backside surface of the substrate 114, the problem whereby the substrate sticks to the clamp can be reduced. This results in a corresponding reduction in substrate breakage.

Abstract translation: 公开了一种静电夹具，其在去除和移除之前更有效地从衬底上去除积聚的电荷。 目前，电极引脚和接地引脚是植入后从衬底去除电荷的唯一机制。 本公开描述了一种夹具，具有一个更多额外的Sow电阻到地的路径。 这些额外的管道允许在从夹具移除衬底之前和期间消耗积分电荷。 通过从基板114的背面提供足够的电荷排出，可以减少基板粘附到夹具上的问题。 这导致基板断裂的相应减少。

公开(公告)号：WO2009140153A2

公开(公告)日：2009-11-19

申请号：PCT/US2009/043261

申请日：2009-05-08

Applicant: APPLIED MATERIALS, INC. ,  LUBOMIRSKY, Dmitry ,  TAN, Tien, Fak ,  TSUEI, Lun

Inventor： LUBOMIRSKY, Dmitry ,  TAN, Tien, Fak ,  TSUEI, Lun

IPC: H01L21/683 ,  H01L21/687 ,  H01L21/3065 ,  H01L21/205

CPC classification number: H01L21/67126 ,  H01L21/6838 ,  Y10T279/23

Abstract: A wafer pedestal of a semiconductor apparatus is provided. The wafer pedestal is capable of supporting a substrate. The wafer pedestal includes a pedestal having at least one purge opening configured to flow a purge gas and at least one chucking opening configured to chuck the substrate over the pedestal. The pedestal includes a sealing band disposed between the at least one purge opening and the at least one chucking opening. The sealing band is configured to support the substrate.

Abstract translation: 提供半导体装置的晶片基座。 晶片基座能够支撑基板。 晶片基座包括具有至少一个净化开口的基座，该至少一个净化开口构造成流过净化气体;以及至少一个夹紧开口，其构造成将基板夹在基座上。 基座包括设置在至少一个吹扫开口和至少一个夹紧开口之间的密封带。 密封带构造成支撑基底。

公开(公告)号：WO2009126714A1

公开(公告)日：2009-10-15

申请号：PCT/US2009/039915

申请日：2009-04-08

Applicant: ROMAR MEC, LLC ,  HARRIS, Will ,  DASBACH, Gerald, L.

Inventor： HARRIS, Will ,  DASBACH, Gerald, L.

IPC: B23Q3/15

CPC classification number: B23Q9/0042 ,  B23K31/02 ,  B23K37/0217 ,  B23K37/0264 ,  B23K37/0276 ,  B23K2201/06 ,  B23K2201/10 ,  B23K2201/18 ,  B23Q2210/008 ,  Y10T74/22 ,  Y10T279/23

Abstract: Apparatus and methods for guiding one or more tools are provided. In at least one specific embodiment, the apparatus for guiding one or more tools can include an elongated member. The elongated member can have one or more switchable magnets disposed thereon.

Abstract translation: 提供了用于引导一个或多个工具的装置和方法。 在至少一个具体实施例中，用于引导一个或多个工具的装置可以包括细长构件。 细长构件可以具有设置在其上的一个或多个可切换磁体。

公开(公告)号：WO2009005921A2

公开(公告)日：2009-01-08

申请号：PCT/US2008/065471

申请日：2008-06-02

Applicant: PRAXAIR TECHNOLOGY, INC. ,  NAIM, Mahmood

Inventor： NAIM, Mahmood

IPC: H02N13/00 ,  H01L21/683

CPC classification number: H02N13/00 ,  H01J2237/2007 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6875 ,  H01L21/68757 ,  Y10T279/23

Abstract: The present invention discloses an electrostatic chuck for clamping work substrates, said chuck comprising three layers, where the dielectric constant of included non-conductive layers is selected to provide overall lower capacitance to the chuck. In the chuck assembly of the present invention, the top dielectric layer that is in contact with a substrate, such as, for example, a wafer, has a dielectric constant that is preferably greater than about 5, with a resistivity that is preferably greater than about 1E6 ohm.m, whereas the bottom dielectric layer has a dielectric constant that is preferably less than about 5 and a resistivity that is preferably greater than about IElO ohm.m. The intermediate layer preferably has a conductive layer where the resistivity is less than about 1 ohm.m. The electrostatic chuck may be bonded to heat sinks coated with anti-arc dielectrics. The heat sink can also be used as an RF electrode. The heat sink may have provisions for coolants and gas channels to feed a cooling gas to the backside of a wafer. The heat sink may have feed thrus to power the segmented electrodes in the electrostatic chuck. The passages for the feed thrus, gas feed holes and lift pins may be lined with ceramics or polymers to prevent any discharge to the heat sink. The electrostatic chuck is for clamping work substrates like Si, GaAs, SiO2, etc. used in semiconductor tools.

Abstract translation: 本发明公开了一种用于夹紧工作衬底的静电卡盘，所述卡盘包括三层，其中所包括的非导电层的介电常数被选择为向夹盘提供总体较低的电容。 在本发明的卡盘组件中，与衬底（例如晶片）接触的顶部介电层具有优选大于约5的介电常数，其电阻率优选大于 约1E6欧姆。而底部介电层具有优选小于约5的介电常数和优选大于约10EOhm.m的电阻率。 中间层优选具有导电层，其中电阻率小于约1欧姆·米。 静电吸盘可以粘接到涂有抗电弧介质的散热片上。 散热器也可以用作RF电极。 散热器可以具有用于将冷却气体供应到晶片的背面的冷却剂和气体通道。 散热器可以具有馈电柱以为静电吸盘中的分段电极供电。 进料头，供气孔和升降销的通道可以用陶瓷或聚合物衬里，以防止任何放电至散热片。 静电卡盘用于夹持半导体工具中使用的Si，GaAs，SiO2等工件基板。

公开(公告)号：WO2008027305A3

公开(公告)日：2008-05-02

申请号：PCT/US2007018711

申请日：2007-08-24

Applicant: LAM RES CORP ,  STEGER ROBERT ,  COMENDANT KEITH

Inventor： STEGER ROBERT ,  COMENDANT KEITH

IPC: H01L21/683

CPC classification number: H01L21/67248 ,  H01L21/6831 ,  Y10T279/23

Abstract: A method of tuning the thermal conductivity of an electrostatic chuck (ESC) support assembly comprises measuring the temperature at a plurality of sites on a support assembly surface in which each site is associated with a given cell, determining from the measurements any fractional reduction in area suggested for each cell, and removing material from the support assembly surface within each cell in accordance with the suggested fractional reduction in order to decrease thermal conductivity in that cell. The material removal can result in an improvement to the equilibrium temperature uniformity of the electrostatic chuck support assembly at the chuck surface of an electrostatic chuck bonded to the support assembly surface, or can result in an equilibrium temperature profile of the ESC support assembly which approaches or achieves a target equilibrium temperature profile. Thermal conductivity tuning can thus take place by a method comprising defining a cell structure, determining the target areal density of each cell and removing a fractional area of material to achieve the target areal density for that cell. Material removal can be effected by drilling, routing, laser machining or grit blast machining on an X-Y table.

Abstract translation: 调节静电吸盘（ESC）支撑组件的热导率的方法包括测量支撑组件表面上的多个位置处的温度，其中每个位置与给定的电池相关联，根据测量结果确定区域中的任何分数减少 建议用于每个电池，并且根据建议的分数减少从每个电池内的支撑组件表面移除材料以降低该电池中的热导率。 材料去除可导致静电卡盘支撑组件在与支撑组件表面结合的静电卡盘的卡盘表面处的平衡温度均匀性的改善，或者可导致ESC支撑组件的平衡温度分布， 达到目标平衡温度曲线。 因此，热导率调整可以通过包括以下方法进行：限定单元结构;确定每个单元的目标面密度;以及去除材料的分数区域以实现该单元的目标面密度。 材料去除可以通过在X-Y台上进行钻孔，布线，激光加工或喷砂加工来实现。

公开(公告)号：WO2008048518A1

公开(公告)日：2008-04-24

申请号：PCT/US2007/021925

申请日：2007-10-12

Applicant: APPLIED MATERIALS ,  PARKHE, Vijay, D. ,  TSAI, Cheng-Hsiung ,  SANSONI, Steven, V.

Inventor： PARKHE, Vijay, D. ,  TSAI, Cheng-Hsiung ,  SANSONI, Steven, V.

IPC: H01L21/683

CPC classification number: H01L21/6831 ,  Y10T29/49117 ,  Y10T279/23

Abstract: A detachable electrostatic chuck is capable of being attached to a pedestal in a process chamber. The chuck comprises an electrostatic puck having a ceramic body with an embedded electrode. The chuck also has a baseplate below the electrostatic puck with a lower surface which is bonded to a sealing assembly comprising a sealing plate and sealing ring. The sealing plate and ring are polished to form a gas-tight seal between the chuck and pedestal to prevent gas leakage from or into this region.

Abstract translation: 可拆卸的静电卡盘能够附接到处理室中的基座。 卡盘包括具有带嵌入电极的陶瓷体的静电压盘。 卡盘还具有位于静电压盘下面的底板，下表面粘合到包括密封板和密封环的密封组件上。 密封板和环被抛光以在卡盘和基座之间形成气密密封，以防止气体从该区域泄漏。

公开(公告)号：WO2008018341A1

公开(公告)日：2008-02-14

申请号：PCT/JP2007/065073

申请日：2007-08-01

Applicant: 住友大阪セメント株式会社 ,  稲妻地 浩 ,  小坂井 守 ,  三浦 幸夫 ,  牧 恵吾

Inventor： 稲妻地 浩 ,  小坂井 守 ,  三浦 幸夫 ,  牧 恵吾

IPC: H01L21/683 ,  H01L21/205 ,  H01L21/3065 ,  H02N13/00

CPC classification number: H01L21/6833 ,  H02N13/00 ,  Y10T279/23

Abstract: Disclosed is an electrostatic chuck device which enables to perform a plasma process having high in-plane uniformity to a plate-like sample by improving the in-plane uniformity of the electric field intensity in a plasma when applied to a plasma processing apparatus. Specifically disclosed is an electrostatic chuck device (21) comprising an electrostatic chuck portion (22), a metal base portion (23) serving as a high-frequency generating electrode, and an insulating plate (24). The electrostatic chuck portion (22) is composed of a dielectric plate (31) whose upper surface (31a) serves as a mounting surface on which a plate-like sample (W) is placed, a supporting plate (32), an internal electrode (25) for electrostatic suction, and an insulating material layer (33). The internal electrode (25) for electrostatic suction is made of a composite sintered body containing an insulating ceramic and silicon carbide, while having a volume resistivity of not less than 1.0 x 10 -1 O cm but not more than 1.0 x 10 5 O cm.

Abstract translation: 公开了一种静电卡盘装置，其能够通过在施加到等离子体处理装置时通过提高等离子体中的电场强度的面内均匀性来对板状样品进行具有高面内均匀性的等离子体处理。 具体公开了一种静电吸盘装置（21），其包括静电吸盘部（22），作为高频发生电极的金属基部（23）和绝缘板（24）。 静电吸盘部（22）由上表面（31a）作为其上放置有板状样品（W）的安装面的电介质板（31），支撑板（32），内部电极 （25）和绝缘材料层（33）。 用于静电吸引的内部电极（25）由包含绝缘陶瓷和碳化硅的复合烧结体制成，体积电阻率不小于1.0×10 -1Ωcm，但不超过 大于1.0×10 5 O cm。

公开(公告)号：WO2004088744A1

公开(公告)日：2004-10-14

申请号：PCT/JP2004/004508

申请日：2004-03-30

Applicant: 三菱住友シリコン株式会社 ,  中田 嘉信 ,  白木 弘幸 ,  長谷川 健

Inventor： 中田 嘉信 ,  白木 弘幸 ,  長谷川 健

IPC: H01L21/68

CPC classification number: F27D5/0037 ,  F27B17/0025 ,  H01L21/324 ,  H01L21/67109 ,  Y10T279/23

Abstract: このシリコンウェーハ熱処理治具および方法は、支持粋から互いに間隔をあけて中心点に向けて突出する3つの支持腕部の上側に支持突起を有し、シリコンウェーハを前記支持突起の上に載せて処理炉内で熱処理する際、支持突起の全てがシリコンウェーハの同一円周上でシリコンウェーハ半径の外側方向85～99.5%の範囲内に位置し、各支持腕部がそれぞれ中心点に対して120゜の角を為すように配置されることで、ピン跡から入る転位のフリー深さをデバイス形成領域より深くするとともに、このようなウェーハ表面にスリップがないスリップフリー領域を最も広くする。

Abstract translation: 在硅晶片热处理夹具和方法中，从支撑框架朝向中心点彼此间隔开并突出的三个支撑臂在其上侧具有支撑突起。 当将硅晶片放置在支撑突起上并在处理炉中进行热处理时，所有的支撑突起都位于晶片的相同圆周上，并且在所示的硅晶片的半径的85-99.5％的范围内 径向向外的单个支撑臂相对于中心点形成120°的角度。 结果，从引脚位置开始的无变形深度大于器件形成区域，并且在这种晶片表面上没有滑动的无滑动区域被最大化。