公开(公告)号：WO2011119231A3

公开(公告)日：2012-03-29

申请号：PCT/US2011000542

申请日：2011-03-24

Applicant: UNIV LELAND STANFORD JUNIOR ,  HOLME TIMOTHY P ,  IANCU ANDREI ,  JUNG HEE JOON ,  LANGSTON MICHAEL C ,  MOTOYAMA MUNEKAZU ,  PRINZ FRIEDRICH B ,  USUI TAKANE ,  IWADATE HITOSHI ,  DASGUPTA NEIL ,  CHAO CHENG-CHIEH

Inventor： HOLME TIMOTHY P ,  IANCU ANDREI ,  JUNG HEE JOON ,  LANGSTON MICHAEL C ,  MOTOYAMA MUNEKAZU ,  PRINZ FRIEDRICH B ,  USUI TAKANE ,  IWADATE HITOSHI ,  DASGUPTA NEIL ,  CHAO CHENG-CHIEH

IPC: H01L21/20 ,  H01L31/18

CPC classification number: C23C16/482 ,  B82Y10/00 ,  B82Y20/00 ,  C23C16/48 ,  C23C16/483 ,  C23C16/486 ,  C23C16/487 ,  H01L21/02532 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02603 ,  H01L21/0262 ,  H01L31/035209 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/035236 ,  H01L31/18 ,  Y10S977/762 ,  Y10S977/773 ,  Y10S977/774

Abstract: A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.

Abstract translation: 提供了一种制造量子限制的方法。 该方法包括使用沉积设备沉积衬底上的材料层，其中沉积包括在循环之前，循环期间和/或在沉积循环之后照射该层，以改变在该沉积中的量子限制的成核 材料层以控制量子限制的尺寸和/或形状。 量子限制可以包括量子阱，纳米线或量子点。 相对于沉积设备，照射可以就地或离位。 照射可以包括光子，电子或离子的照射。 沉积可以包括原子层沉积，化学气相沉积，MOCVD，分子束外延，蒸发，溅射或脉冲激光沉积。

公开(公告)号：WO2011119231A2

公开(公告)日：2011-09-29

申请号：PCT/US2011/000542

申请日：2011-03-24

Applicant: THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY ,  HOLME, Timothy, P. ,  IANCU, Andrei ,  JUNG, Hee, Joon ,  LANGSTON, Michael, C ,  MOTOYAMA, Munekazu ,  PRINZ, Friedrich, B. ,  USUI, Takane ,  IWADATE, Hitoshi ,  DASGUPTA, Neil ,  CHAO, Cheng-Chieh

Inventor： HOLME, Timothy, P. ,  IANCU, Andrei ,  JUNG, Hee, Joon ,  LANGSTON, Michael, C ,  MOTOYAMA, Munekazu ,  PRINZ, Friedrich, B. ,  USUI, Takane ,  IWADATE, Hitoshi ,  DASGUPTA, Neil ,  CHAO, Cheng-Chieh

IPC: H01L21/20 ,  H01L31/18

CPC classification number: C23C16/482 ,  B82Y10/00 ,  B82Y20/00 ,  C23C16/48 ,  C23C16/483 ,  C23C16/486 ,  C23C16/487 ,  H01L21/02532 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02603 ,  H01L21/0262 ,  H01L31/035209 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/035236 ,  H01L31/18 ,  Y10S977/762 ,  Y10S977/773 ,  Y10S977/774

Abstract: A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.

Abstract translation: 提供了一种制造量子限制的方法。 该方法包括使用沉积设备沉积衬底上的材料层，其中沉积包括在循环之前，循环期间和/或在沉积循环之后照射该层，以改变在该沉积中的量子限制的成核 材料层以控制量子限制的尺寸和/或形状。 量子限制可以包括量子阱，纳米线或量子点。 相对于沉积设备，照射可以就地或离位。 照射可以包括光子，电子或离子的照射。 沉积可以包括原子层沉积，化学气相沉积，MOCVD，分子束外延，蒸发，溅射或脉冲激光沉积。

公开(公告)号：WO2010114600A1

公开(公告)日：2010-10-07

申请号：PCT/US2010/000953

申请日：2010-03-29

Applicant: THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY ,  HOLME, Timothy, P. ,  PRINZ, Friedrich, B. ,  USUI, Takane

Inventor： HOLME, Timothy, P. ,  PRINZ, Friedrich, B. ,  USUI, Takane

IPC: H01L21/02 ,  H01L29/92 ,  H01L29/06 ,  H01L29/12 ,  H01G9/058 ,  H01L21/8242 ,  H01G4/33 ,  H01G9/048 ,  H01G9/055

CPC classification number: H01G4/33 ,  H01G9/048 ,  H01G9/055 ,  H01G11/26 ,  H01L28/82 ,  H01L28/91 ,  Y02E60/13

Abstract: Improved energy storage is provided by exploiting two physical effects in combination. The first effect can be referred to as the All-Electron Battery (AEB) effect, and relates to the use of inclusions embedded in a dielectric structure between two electrodes of a capacitor. Electrons can tunnel through the dielectric between the electrodes and the inclusions, thereby increasing the charge storage density relative to a conventional capacitor. The second effect can be referred to as an area enhancement effect, and relates to the use of micro-structuring or nano- structuring on one or both of the electrodes to provide an enhanced interface area relative to the electrode geometrical area. Area enhancement is advantageous for reducing the self-discharge rate of the device.

Abstract translation: 通过组合利用两种物理效应来提供改进的能量存储。 第一效果可以称为全电子电池（AEB）效应，并且涉及嵌入在电容器的两个电极之间的电介质结构中的夹杂物的使用。 电子可以穿过电极和夹杂物之间的电介质，从而相对于常规电容器增加电荷存储密度。 第二个效果可以称为区域增强效应，并且涉及在一个或两个电极上使用微结构或纳米结构以提供相对于电极几何面积的增强的界面面积。 面积增加对于降低装置的自放电率是有利的。