METHOD OF DETACHING SEMI-CONDUCTOR LAYERS AT LOW TEMPERATURE
    2.
    发明申请
    METHOD OF DETACHING SEMI-CONDUCTOR LAYERS AT LOW TEMPERATURE 审中-公开
    在低温下分离半导体层的方法

    公开(公告)号:WO2010049497A1

    公开(公告)日:2010-05-06

    申请号:PCT/EP2009/064308

    申请日:2009-10-29

    CPC classification number: H01L21/187 H01L21/76251

    Abstract: The invention relates to a method for producing UTBOX type structures comprising: a) the assembly of a substrate, known as "donor" substrate (1), with a substrate, known as "receiver" substrate (2), at least one of the two substrates comprising an insulating layer (3) of thickness less than 50 nm, b) a first heat treatment for reinforcing the assembly between the two substrates, at temperature below 400°C, carried out during the assembly and/or after assembly, to reinforce said assembly, c) a second heat treatment at temperature above 900°C, the exposure time between 400°C and 900°C being less than 1 minute or 30 seconds.

    Abstract translation: 本发明涉及一种用于生产UTBOX型结构的方法,包括:a)将称为“供体”衬底(1)的衬底与称为“接收器”衬底(2)的衬底的组装,至少一个 包括厚度小于50nm的绝缘层(3)的两个基板,b)在组装和/或组装之后执行的在低于400℃的温度下加强两个基板之间的组件的第一热处理, 加强所述组件,c)在高于900℃的温度下的第二次热处理,400℃和900℃之间的曝光时间小于1分钟或30秒。

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