中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

13 records (took 0.01 seconds)

    CURRENT DRIVEN SWITCHING OF MAGNETIC STORAGE CELLS UTILIZING SPIN TRANSFER AND MAGNETIC MEMORIES USING SUCH CELLS HAVING ENHANCED READ AND WRITE MARGINS
    1.
    发明申请
    CURRENT DRIVEN SWITCHING OF MAGNETIC STORAGE CELLS UTILIZING SPIN TRANSFER AND MAGNETIC MEMORIES USING SUCH CELLS HAVING ENHANCED READ AND WRITE MARGINS 审中-公开
    使用具有增强读取和写入标志的这种细胞的磁性转移和磁性记忆的磁性存储细胞的当前驱动切换

    公开(公告)号：WO2008002813A3

    公开(公告)日：2009-01-08

    申请号：PCT/US2007071710

    申请日：2007-06-20

    Applicant: GRANDIS INC ,  RENESAS TECH CORP ,  CHEN EUGENE YOUJUN ,  HUAI YIMING ,  PANCHULA ALEX FISCHER ,  WANG LIEN-CHANG ,  LUO XIAO

    Inventor： CHEN EUGENE YOUJUN ,  HUAI YIMING ,  PANCHULA ALEX FISCHER ,  WANG LIEN-CHANG ,  LUO XIAO

    IPC: G11C11/15

    CPC classification number: G11C11/16

    Abstract: A method and system for providing a magnetic memory is described. The magnetic memory includes magnetic storage cells in an array, bit lines, and source lines. Each magnetic storage cell includes at least one magnetic element. The magnetic element(s) are programmable by write currents driven through the magnetic element(s). Each magnetic element has free and pinned layer(s) and a dominant spacer. The magnetic memory is configured such that either the read current(s) flow from the free layer(s) to the dominant spacer if the maximum low resistance state read current divided by the minimum low resistance state write current is greater than the maximum high resistance state read current divided by the minimum high resistance state write current or the read current(s) flow from the dominant spacer to the free layer(s) if the maximum low resistance state read current divided by the minimum low resistance state write current is less than the maximum high resistance state read current divided by the minimum high resistance state write current.

    Abstract translation: 描述了一种用于提供磁存储器的方法和系统。 磁存储器包括阵列中的磁存储单元，位线和源极线。 每个磁存储单元包括至少一个磁性元件。 磁性元件可以通过驱动通过磁性元件的写入电流来编程。 每个磁性元件具有自由和固定的层和主要间隔物。 如果最大低电阻状态读取电流除以最小低电阻状态写入电流除以最大高电阻，则磁存储器被配置为使得读取电流从自由层流向主要间隔物 如果最小低电阻状态读取电流除以最小低电阻状态写入电流，则状态读取电流除以最小高电阻状态写入电流或从主要间隔物到自由层的读取电流（s） 比最大高电阻状态读取电流除以最小高电阻状态写入电流。

    METHOD AND SYSTEM FOR PROVIDING CURRENT BALANCED WRITING FOR MEMORY CELLS AND MAGNETIC DEVICES
    2.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING CURRENT BALANCED WRITING FOR MEMORY CELLS AND MAGNETIC DEVICES 审中-公开
    用于提供存储电池和磁性装置的电流平衡写入的方法和系统

    公开(公告)号：WO2007062100A2

    公开(公告)日：2007-05-31

    申请号：PCT/US2006/045168

    申请日：2006-11-22

    Applicant: GRANDIS, INC. ,  WANG, Lien-Chang ,  DIAO, Zhitao ,  DING, Yunfei

    Inventor： WANG, Lien-Chang ,  DIAO, Zhitao ,  DING, Yunfei

    IPC: G11C11/00

    CPC classification number: G11C11/16

    Abstract: A method and system for providing a magnetic memory is described. The method and system include providing at least one magnetic storage cell and at least one dummy resistor coupled with the at least one magnetic storage cell at least for a write operation of the at least one magnetic storage cell. Each of the at least one magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction. The selection device is configured to be coupled between the magnetic element and the at least one dummy resistor.

    Abstract translation: 描述了一种用于提供磁存储器的方法和系统。 该方法和系统包括至少提供至少一个磁存储单元和至少一个与至少一个磁存储单元耦合的虚拟电阻器，用于至少一个磁存储单元的写入操作。 所述至少一个磁存储单元中的每一个包括与所述磁性元件耦合的磁性元件和选择装置。 磁性元件由第一方向驱动通过磁性元件的第一写入电流和沿着第二方向驱动通过磁性元件的第二写入电流来编程。 选择装置被配置为耦合在磁性元件和至少一个虚拟电阻器之间。

    METHOD AND SYSTEM FOR PROVIDING CURRENT BALANCED WRITING FOR MEMORY CELLS AND MAGNETIC DEVICES
    3.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING CURRENT BALANCED WRITING FOR MEMORY CELLS AND MAGNETIC DEVICES 审中-公开
    用于提供存储电池和磁性装置的电流平衡写入的方法和系统

    公开(公告)号：WO2007062100A3

    公开(公告)日：2009-05-07

    申请号：PCT/US2006045168

    申请日：2006-11-22

    Applicant: GRANDIS INC ,  WANG LIEN-CHANG ,  DIAO ZHITAO ,  DING YUNFEI

    Inventor： WANG LIEN-CHANG ,  DIAO ZHITAO ,  DING YUNFEI

    IPC: G11C11/00

    CPC classification number: G11C11/16

    Abstract: A method and system for providing a magnetic memory is described. The method and system include providing at least one magnetic storage cell and at least one dummy resistor coupled with the at least one magnetic storage cell at least for a write operation of the at least one magnetic storage cell. Each of the at least one magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction. The selection device is configured to be coupled between the magnetic element and the at least one dummy resistor.

    Abstract translation: 描述了一种用于提供磁存储器的方法和系统。 该方法和系统包括至少提供至少一个磁存储单元和至少一个与至少一个磁存储单元耦合的虚拟电阻器，用于至少一个磁存储单元的写入操作。 所述至少一个磁存储单元中的每一个包括与所述磁性元件耦合的磁性元件和选择装置。 磁性元件由第一方向驱动通过磁性元件的第一写入电流和沿着第二方向驱动通过磁性元件的第二写入电流来编程。 选择装置被配置为耦合在磁性元件和至少一个虚拟电阻器之间。

    METHOD AND SYSTEM FOR PROVIDING A MAGNETIC MEMORY STRUCTURE UTILIZING SPIN TRANSFER
    5.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING A MAGNETIC MEMORY STRUCTURE UTILIZING SPIN TRANSFER 审中-公开

    公开(公告)号：WO2007143393A3

    公开(公告)日：2007-12-13

    申请号：PCT/US2007/069558

    申请日：2007-05-23

    Applicant: GRANDIS, INC. ,  RENESAS TECHNOLOGY CORP. ,  LUO, Xiao ,  CHEN, Eugene, Youjun ,  WANG, Lien-Chang ,  HUAI, Yiming

    Inventor： LUO, Xiao ,  CHEN, Eugene, Youjun ,  WANG, Lien-Chang ,  HUAI, Yiming

    IPC: G11C11/00

    Abstract: A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programmed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.

    HIGH DENSITY MAGNETIC MEMORY CELL LAYOUT FOR SPIN TRANSFER TORQUE MAGNETIC MEMORIES UTILIZING DONUT SHAPED TRANSISTORS
    6.
    发明申请
    HIGH DENSITY MAGNETIC MEMORY CELL LAYOUT FOR SPIN TRANSFER TORQUE MAGNETIC MEMORIES UTILIZING DONUT SHAPED TRANSISTORS 审中-公开
    用于旋转形状晶体管的转子转子磁记录的高密度磁记录单元布局

    公开(公告)号：WO2007137055A3

    公开(公告)日：2008-11-06

    申请号：PCT/US2007069014

    申请日：2007-05-16

    Applicant: GRANDIS INC ,  RENESAS TECH CORP ,  XIAO LUO ,  WANG LIEN-CHANG

    Inventor： XIAO LUO ,  WANG LIEN-CHANG

    IPC: G11C11/00 ,  G11C11/14 ,  H01L27/088

    CPC classification number: H01L27/228 ,  G11C11/16 ,  H01L29/4238

    Abstract: A method and system for providing and using a magnetic storage cell and magnetic memory is described. The method and system include providing a magnetic element and providing a selection device. The magnetic element is programmable to a first state by a first write current driven through the magnetic element in a first direction and to a second state by a second write current driven through the magnetic element in a second direction. The selection device is connected with the magnetic element. The selection device includes a gate having an aperture therein. The selection device is configured such that the first write current and second write current are provided to the magnetic element across the aperture.

    Abstract translation: 描述了一种用于提供和使用磁存储单元和磁存储器的方法和系统。 该方法和系统包括提供磁性元件并提供选择装置。 磁性元件可通过在第一方向通过磁性元件驱动的第一写入电流而被编程为第一状态，并且通过在第二方向上被驱动通过磁性元件的第二写入电流而被编程为第二状态。 选择装置与磁性元件连接。 选择装置包括其中具有孔的门。 选择装置被配置为使得第一写入电流和第二写入电流被提供给穿过该孔的磁性元件。

    CURRENT DRIVEN SWITCHING OF MAGNETIC STORAGE CELLS UTILIZING SPIN TRANSFER AND MAGNETIC MEMORIES USING SUCH CELLS HAVING ENHANCED READ AND WRITE MARGINS
    8.
    发明申请
    CURRENT DRIVEN SWITCHING OF MAGNETIC STORAGE CELLS UTILIZING SPIN TRANSFER AND MAGNETIC MEMORIES USING SUCH CELLS HAVING ENHANCED READ AND WRITE MARGINS 审中-公开
    使用具有增强读取和写入标志的这种细胞的磁性转移和磁性记忆的磁性存储细胞的当前驱动切换

    公开(公告)号：WO2008002813A2

    公开(公告)日：2008-01-03

    申请号：PCT/US2007/071710

    申请日：2007-06-20

    Applicant: GRANDIS, INC. ,  RENESAS TECHNOLOGY CORP. ,  CHEN, Eugene, Youjun ,  HUAI, Yiming ,  PANCHULA, Alex, Fischer ,  WANG, Lien-Chang ,  LUO, Xiao

    Inventor： CHEN, Eugene, Youjun ,  HUAI, Yiming ,  PANCHULA, Alex, Fischer ,  WANG, Lien-Chang ,  LUO, Xiao

    IPC: G11C11/15

    CPC classification number: G11C11/16

    Abstract: A method and system for providing a magnetic memory is described. The magnetic memory includes magnetic storage cells in an array, bit lines, and source lines. Each magnetic storage cell includes at least one magnetic element. The magnetic element(s) are programmable by write currents driven through the magnetic element(s). Each magnetic element has free and pinned layer(s) and a dominant spacer. The magnetic memory is configured such that either the read current(s) flow from the free layer(s) to the dominant spacer if the maximum low resistance state read current divided by the minimum low resistance state write current is greater than the maximum high resistance state read current divided by the minimum high resistance state write current or the read current(s) flow from the dominant spacer to the free layer(s) if the maximum low resistance state read current divided by the minimum low resistance state write current is less than the maximum high resistance state read current divided by the minimum high resistance state write current.

    Abstract translation: 描述了一种用于提供磁存储器的方法和系统。 磁存储器包括阵列中的磁存储单元，位线和源极线。 每个磁存储单元包括至少一个磁性元件。 磁性元件可以通过驱动通过磁性元件的写入电流来编程。 每个磁性元件具有自由和固定的层和主要间隔物。 如果最大低电阻状态读取电流除以最小低电阻状态写入电流除以最大高电阻，则磁存储器被配置为使得读取电流从自由层流向主要间隔物 如果最小低电阻状态读取电流除以最小低电阻状态写入电流，则状态读取电流除以最小高电阻状态写入电流或从主要间隔物到自由层的读取电流（s） 比最大高电阻状态读取电流除以最小高电阻状态写入电流。

    METHOD AND SYSTEM FOR PROVIDING A MAGNETIC MEMORY STRUCTURE UTILIZING SPIN TRANSFER
    9.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING A MAGNETIC MEMORY STRUCTURE UTILIZING SPIN TRANSFER 审中-公开
    用于提供使用旋转转移的磁记忆结构的方法和系统

    公开(公告)号：WO2007143393A2

    公开(公告)日：2007-12-13

    申请号：PCT/US2007069558

    申请日：2007-05-23

    Applicant: GRANDIS INC ,  RENESAS TECH CORP ,  LUO XIAO ,  CHEN EUGENE YOUJUN ,  WANG LIEN-CHANG ,  HUAI YIMING

    Inventor： LUO XIAO ,  CHEN EUGENE YOUJUN ,  WANG LIEN-CHANG ,  HUAI YIMING

    IPC: G11C11/00

    CPC classification number: G11C11/1675 ,  G11C8/12 ,  G11C8/14 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673

    Abstract: A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programmed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.

    Abstract translation: 描述了一种用于提供磁存储器的方法和系统。 该方法和系统包括提供磁存储器单元，局部和全局字线，位线和源极线。 每个磁存储单元包括磁性元件和与该磁性元件连接的选择装置。 磁性元件通过在第一和第二方向通过磁性元件驱动的第一和第二写入电流来编程。 局部字线与第一电阻率的选择装置连接。 每个全局字线对应于局部字线的一部分，并具有低于第一电阻率的电阻率。 位线与磁性元件连接。 源极线与选择器件连接。 每个源极线对应于多个磁存储器单元并且承载第一和第二写入电流。

Patent Agency Ranking