公开(公告)号：WO2006014346A2

公开(公告)日：2006-02-09

申请号：PCT/US2005/023487

申请日：2005-06-30

Applicant: CREE, INC. ,  WARD, Alan, III ,  HENNING, Jason, Patrick ,  HAGLEITNER, Helmut ,  WIEBER, Keith, Dennis

Inventor： WARD, Alan, III ,  HENNING, Jason, Patrick ,  HAGLEITNER, Helmut ,  WIEBER, Keith, Dennis

IPC: H01L21/28 ,  H01L29/45

CPC classification number: H01L29/1608 ,  H01L21/0455 ,  H01L21/0485 ,  H01L29/45 ,  Y10S438/931

Abstract: A method of producing an ohmic contact and a resulting ohmic contact structure are disclosed. The method includes the steps of forming a deposited film of nickel and silicon on a silicon carbide surface at a temperature below which either element will react with silicon carbide and in respective proportions so that the atomic fraction of silicon in the deposited film is greater than the atomic fraction of nickel, and heating the deposited film of nickel and silicon to a temperature at which nickel-silicon compounds will form with an atomic fraction of silicon greater than the atomic fraction of nickel but below the temperature at which either element will react with silicon carbide. The method can further include the step of annealing the nickel-silicon compound to a temperature higher than the heating temperature for the deposited film, and within a region of the phase diagram at which free carbon does not exist.

Abstract translation: 公开了一种制造欧姆接触和产生的欧姆接触结构的方法。 该方法包括以下步骤：在碳化硅表面上形成镍和硅的沉积膜，低于该温度时，任一元素将与碳化硅反应并以相应的比例使沉积膜中硅的原子比大于 将镍和硅的原子分数加热至镍 - 硅化合物形成的温度，其中硅原子比硅的原子分数大于镍的原子分数，但低于任一元素将与硅反应的温度 碳化物。 该方法还可以包括将镍硅化合物退火至高于沉积膜的加热温度的温度，并且在不存在游离碳的相图的区域内。

公开(公告)号：WO2006014346A3

公开(公告)日：2006-09-21

申请号：PCT/US2005023487

申请日：2005-06-30

Applicant: CREE INC ,  WARD ALAN III ,  HENNING JASON PATRICK ,  HAGLEITNER HELMUT ,  WIEBER KEITH DENNIS

Inventor： WARD ALAN III ,  HENNING JASON PATRICK ,  HAGLEITNER HELMUT ,  WIEBER KEITH DENNIS

IPC: H01L21/28 ,  H01L21/18 ,  H01L29/45

CPC classification number: H01L29/1608 ,  H01L21/0455 ,  H01L21/0485 ,  H01L29/45 ,  Y10S438/931

Abstract: A method of producing an ohmic contact and a resulting ohmic contact structure are disclosed. The method includes the steps of forming a deposited film of nickel and silicon on a silicon carbide surface at a temperature below which either element will react with silicon carbide and in respective proportions so that the atomic fraction of silicon in the deposited film is greater than the atomic fraction of nickel, and heating the deposited film of nickel and silicon to a temperature at which nickel-silicon compounds will form with an atomic fraction of silicon greater than the atomic fraction of nickel but below the temperature at which either element will react with silicon carbide. The method can further include the step of annealing the nickel-silicon compound to a temperature higher than the heating temperature for the deposited film, and within a region of the phase diagram at which free carbon does not exist.

Abstract translation: 公开了一种产生欧姆接触和产生的欧姆接触结构的方法。 该方法包括以下步骤：在碳化硅表面上形成镍和硅的沉积膜，在该温度下，任一元素都将与碳化硅反应并且以各自的比例使得沉积膜中硅的原子分数大于 镍的原子分数，并且将沉积的镍和硅膜加热到镍 - 硅化合物将形成的温度，其中硅的原子分数大于镍的原子分数但低于任一元素将与硅反应的温度 碳化物。 该方法可以进一步包括将镍 - 硅化合物退火至高于沉积膜加热温度的温度的步骤，以及在不存在游离碳的相图区域内。