公开(公告)号：WO2008018341A1

公开(公告)日：2008-02-14

申请号：PCT/JP2007/065073

申请日：2007-08-01

Applicant: 住友大阪セメント株式会社 ,  稲妻地 浩 ,  小坂井 守 ,  三浦 幸夫 ,  牧 恵吾

Inventor： 稲妻地 浩 ,  小坂井 守 ,  三浦 幸夫 ,  牧 恵吾

IPC: H01L21/683 ,  H01L21/205 ,  H01L21/3065 ,  H02N13/00

CPC classification number: H01L21/6833 ,  H02N13/00 ,  Y10T279/23

Abstract: Disclosed is an electrostatic chuck device which enables to perform a plasma process having high in-plane uniformity to a plate-like sample by improving the in-plane uniformity of the electric field intensity in a plasma when applied to a plasma processing apparatus. Specifically disclosed is an electrostatic chuck device (21) comprising an electrostatic chuck portion (22), a metal base portion (23) serving as a high-frequency generating electrode, and an insulating plate (24). The electrostatic chuck portion (22) is composed of a dielectric plate (31) whose upper surface (31a) serves as a mounting surface on which a plate-like sample (W) is placed, a supporting plate (32), an internal electrode (25) for electrostatic suction, and an insulating material layer (33). The internal electrode (25) for electrostatic suction is made of a composite sintered body containing an insulating ceramic and silicon carbide, while having a volume resistivity of not less than 1.0 x 10 -1 O cm but not more than 1.0 x 10 5 O cm.

Abstract translation: 公开了一种静电卡盘装置，其能够通过在施加到等离子体处理装置时通过提高等离子体中的电场强度的面内均匀性来对板状样品进行具有高面内均匀性的等离子体处理。 具体公开了一种静电吸盘装置（21），其包括静电吸盘部（22），作为高频发生电极的金属基部（23）和绝缘板（24）。 静电吸盘部（22）由上表面（31a）作为其上放置有板状样品（W）的安装面的电介质板（31），支撑板（32），内部电极 （25）和绝缘材料层（33）。 用于静电吸引的内部电极（25）由包含绝缘陶瓷和碳化硅的复合烧结体制成，体积电阻率不小于1.0×10 -1Ωcm，但不超过 大于1.0×10 5 O cm。