公开(公告)号：WO2015154908A1

公开(公告)日：2015-10-15

申请号：PCT/EP2015/053697

申请日：2015-02-23

Applicant: ABB TECHNOLOGY AG

Inventor： RAVENER, Hendrik ,  WIKSTROEM, Tobias ,  AMSTUTZ, Hermann ,  MEIER, Norbert

IPC: H01L23/051 ,  H01L23/31

CPC classification number: H01L29/745 ,  H01L21/565 ,  H01L23/051 ,  H01L23/3185 ,  H01L29/45 ,  H01L29/66363 ,  H01L29/7416 ,  H01L29/7424 ,  H01L29/744 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to a turn-off power semiconductor device (1) having a wafer (10) with an active region and a termination region surrounding the active region, a rubber ring (70) as an edge passivation for the wafer (10) and a gate ring (60) placed on a ring-shaped gate contact (40) on the termination region for contacting the gate electrodes of at least one thyristor cell formed in the active region of the wafer. In the turn-off power semiconductor device (1) of the invention, the outer circumferential surface of the gate ring is in contact with the rubber ring to define the inner border of the rubber ring (70). In the invention the area consumed by the ring-shaped gate contact (40) on the termination or edge region can be minimized. The upper surface of the gate ring (60) and the upper surface of the rubber ring (70) form a continuous surface extending in a plane parallel to the first main side (11) of the wafer (10). In a method for manufacturing the device, the gate ring (60) is used as an inner sidewall of a mold for molding the rubber ring (70).

Abstract translation: 本发明涉及一种具有晶圆（10）的截止功率半导体器件（1），其具有有源区和围绕有源区的端接区，作为用于晶片（10）的边缘钝化的橡胶环（70） 以及放置在终端区上的环形栅极接触件（40）上的栅极环（60），用于接触形成在晶片有源区域中的至少一个晶闸管电池的栅电极。 在本发明的关断功率半导体装置（1）中，门环的外周面与橡胶环接触，以限定橡胶环（70）的内边界。 在本发明中，环形门接触件（40）在终端或边缘区域上消耗的面积可以最小化。 闸环（60）的上表面和橡胶环（70）的上表面形成在与晶片（10）的第一主侧（11）平行的平面中延伸的连续表面。 在制造该装置的方法中，门环（60）用作模制橡胶环（70）的模具的内侧壁。