公开(公告)号：WO2015047676A1

公开(公告)日：2015-04-02

申请号：PCT/US2014/053826

申请日：2014-09-03

Applicant: ALLEGRO MICROSYSTEMS, LLC

Inventor： KOSIER, Steven ,  HOILIEN, Noel

IPC: G01R33/07 ,  H01L43/06

CPC classification number: H01L43/065 ,  G01R33/077 ,  H01L27/22 ,  H01L43/04 ,  H01L43/14

Abstract: In one aspect, a vertical Hall effect sensor (14) includes a semiconductor wafer (12) having a first conductivity type and a plurality of semiconductive electrodes (118,120A,120B,122A,122B) disposed on the semiconductor wafer. The plurality of semiconductive electrodes have the first conductivity type and include a source electrode (118), a first sensing electrode (120A) and a second sensing electrode (120B), arranged such that the source electrode is between the first sensing electrode and the second sensing electrode and a first drain electrode (122A) and a second drain electrode (122B), arranged such that the first sensing electrode, second sensing electrode, and source electrode are between the first drain electrode and the second drain electrode. The vertical Hall effect sensor also includes a plurality of semiconductor fingers (124A,124B,124C,124D) disposed on the semiconductor wafer and interdigitated with the plurality of semiconductive electrodes, the semiconductor fingers having a second conductivity type.

Abstract translation: 一方面，垂直霍尔效应传感器（14）包括具有第一导电类型的半导体晶片（12）和设置在半导体晶片上的多个半导体电极（118,120A，120B，122A，122B）。 多个半导体电极具有第一导电类型，并且包括源电极（118），第一感测电极（120A）和第二感测电极（120B），其被布置成使得源电极位于第一感测电极和第二感测电极之间 感测电极和第一漏电极（122A）和第二漏电极（122B），其布置成使得第一感测电极，第二感测电极和源电极位于第一漏电极和第二漏电极之间。 垂直霍尔效应传感器还包括设置在半导体晶片上并与多个半导体电极交错的多个半导体指状物（124A，124B，124C，124D），半导体指状物具有第二导电类型。