公开(公告)号：WO2018232244A1

公开(公告)日：2018-12-20

申请号：PCT/US2018/037759

申请日：2018-06-15

Applicant: ALTA DEVICES, INC.

Inventor： RITENOUR, Andrew J. ,  RAU, Ileana ,  CANIZARES, Claudio ,  WASHINGTON, Lori D. ,  KAYES, Brendan M. ,  HE, Gang

IPC: H01L31/0304 ,  H01L31/0687 ,  H01L31/18

Abstract: A growth structure having a lattice transition under a release layer is used as a seed crystal for growth of optoelectronic devices. The optoelectronic device can be a single- or multi-junction photovoltaic device. The release layer can be selectively removed in an epitaxial lift-off (ELO) process to separate the optoelectronic device from the growth structure and leave the region with the lattice transition intact to reuse the growth structure to grow additional devices. A manufacturing method is described that includes providing a growth structure having a substrate and a lattice transition from a first lattice constant to a second lattice constant, depositing a release layer on the growth structure, depositing on the release layer an epitaxial layer having a lattice constant that matches the second lattice and including an optoelectronic device, and removing the release layer to separate the epitaxial layer and the optoelectronic device from the growth structure.