公开(公告)号：WO2018232244A1

公开(公告)日：2018-12-20

申请号：PCT/US2018/037759

申请日：2018-06-15

Applicant: ALTA DEVICES, INC.

Inventor： RITENOUR, Andrew J. ,  RAU, Ileana ,  CANIZARES, Claudio ,  WASHINGTON, Lori D. ,  KAYES, Brendan M. ,  HE, Gang

IPC: H01L31/0304 ,  H01L31/0687 ,  H01L31/18

Abstract: A growth structure having a lattice transition under a release layer is used as a seed crystal for growth of optoelectronic devices. The optoelectronic device can be a single- or multi-junction photovoltaic device. The release layer can be selectively removed in an epitaxial lift-off (ELO) process to separate the optoelectronic device from the growth structure and leave the region with the lattice transition intact to reuse the growth structure to grow additional devices. A manufacturing method is described that includes providing a growth structure having a substrate and a lattice transition from a first lattice constant to a second lattice constant, depositing a release layer on the growth structure, depositing on the release layer an epitaxial layer having a lattice constant that matches the second lattice and including an optoelectronic device, and removing the release layer to separate the epitaxial layer and the optoelectronic device from the growth structure.

公开(公告)号：WO2019067177A1

公开(公告)日：2019-04-04

申请号：PCT/US2018/049869

申请日：2018-09-07

Applicant: ALTA DEVICES, INC.

Inventor： WASHINGTON, Lori D. ,  BOUR, David P. ,  HIGASHI, Gregg ,  HE, Gang

IPC: H01L21/20 ,  H01L31/18

Abstract: Aspects of the disclosure relate to processes for epitaxial growth of Group III/V materials at high rates, such as about 30 µm/hr or greater, for example, about 40 µm/hr, about 50 µm/hr, about 55 µm/hr, about 60 µm/hr, about 70 µm/hr, about 80 µm/hr, and about 90-120 µm/hr deposition rates. The Group III/V materials or films may be utilized in solar, semiconductor, or other electronic device applications. The Group III/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a vapor deposition process. Subsequently, the Group III/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III/V materials are thin films of epitaxially grown layers containing gallium arsenide, gallium aluminum arsenide, gallium indium arsenide, gallium indium arsenide nitride, gallium aluminum indium phosphide, phosphides thereof, nitrides thereof, derivatives thereof, alloys thereof, or combinations thereof.