公开(公告)号：WO2011116013A1

公开(公告)日：2011-09-22

申请号：PCT/US2011/028551

申请日：2011-03-15

Applicant: ALTA DEVICES, INC. ,  HE, Gang ,  HIGASHI, Gregg ,  SORABJI, Khurshed ,  HAMAMJY, Roger ,  HEGEDUS, Andreas, G.

Inventor： HE, Gang ,  HIGASHI, Gregg ,  SORABJI, Khurshed ,  HAMAMJY, Roger ,  HEGEDUS, Andreas, G.

IPC: C23C16/458

CPC classification number: C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/54 ,  C30B25/025 ,  C30B25/12 ,  C30B29/40 ,  C30B29/42 ,  C30B35/005 ,  H01L21/67115 ,  H01L21/67784

Abstract: Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a wafer carrier track for levitating and traversing a wafer carrier within a vapor deposition reactor system is provided which includes upper and lower sections of a track assembly having a gas cavity formed therebetween. A guide path extends along an upper surface of the upper section and between two side surfaces which extend along and above the guide path and parallel to each other. A plurality of gas holes along the guide path extends from the upper surface of the upper section, through the upper section, and into the gas cavity. In some examples, the upper and lower sections of the track assembly may be independently contain quartz, and in some examples, may be fused together.

Abstract translation: 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置。 在一个实施例中，提供了用于在气相沉积反应器系统内悬浮和横穿晶片载体的晶片载体轨道，其包括在其间形成有气体腔的轨道组件的上部和下部。 引导路径沿着上部的上表面延伸并且在引导路径之上和之上延伸并且彼此平行的两个侧表面之间延伸。 沿着引导路径的多个气孔从上部的上表面延伸穿过上部并进入气体腔。 在一些示例中，轨道组件的上部和下部可以独立地包含石英，并且在一些示例中可以熔合在一起。

公开(公告)号：WO2011091385A1

公开(公告)日：2011-07-28

申请号：PCT/US2011/022296

申请日：2011-01-24

Applicant: ALTA DEVICES, INC. ,  HE, Gang ,  GMITTER, Thomas, J. ,  ARCHER, Melissa, Jane

Inventor： HE, Gang ,  GMITTER, Thomas, J. ,  ARCHER, Melissa, Jane

IPC: H01L21/683

CPC classification number: H01L21/6835 ,  H01L21/7806 ,  H01L31/0392 ,  H01L31/1892 ,  H01L2221/6835 ,  H01L2221/68363 ,  Y02E10/50 ,  Y10T428/24942 ,  Y10T428/31678

Abstract: Present embodiments generally relate to support structures for thin film components and methods for fabricating the support structures. In one embodiment, an apparatus comprises a device structure including portions of an electronic device; a support structure coupled to the device structure; wherein the support structure supplements features of the device structure and the support structure includes: a metal component coupled to the device structure; and a non-metal component coupled to the metal component. The support component can supplement structural and mechanical integrity of the device structure and functional operations of the device structure. In one embodiment, the metal component includes at least one layer of metal material and the non-metal component includes at least one layer of non metal material (e.g., polymeric material, etc.). The metal component can have greater stiffness characteristics with respect to the device structure and the non-metal component can have greater flexibility characteristics with respect to the metal layer component. The support structure can be configured to reflect light towards the device structure. The support structure can also be configured to conduct electricity from the device structure.

Abstract translation: 本实施例通常涉及薄膜部件的支撑结构和用于制造支撑结构的方法。 在一个实施例中，一种装置包括包括电子装置的部分的装置结构; 耦合到所述装置结构的支撑结构; 其中所述支撑结构补充所述装置结构的特征，并且所述支撑结构包括：联接到所述装置结构的金属部件; 以及耦合到所述金属部件的非金属部件。 支撑部件可以补充装置结构的结构和机械完整性以及装置结构的功能操作。 在一个实施例中，金属部件包括至少一层金属材料，非金属部件包括至少一层非金属材料（例如，聚合材料等）。 金属部件相对于器件结构可以具有更大的刚度特性，并且非金属部件可以相对于金属层部件具有更大的柔性特性。 支撑结构可以被配置为将光反射到装置结构。 支撑结构也可以被配置为从装置结构传导电力。

公开(公告)号：WO2010048547A2

公开(公告)日：2010-04-29

申请号：PCT/US2009/061911

申请日：2009-10-23

Applicant: ALTA DEVICES, INC. ,  KIZILYALLI, Isik, C. ,  ARCHER, Melissa ,  ATWATER, Harry ,  GMITTER, Thomas J. ,  HE, Gang ,  HEGEDUS, Andreas ,  HIGASHI, Gregg

Inventor： KIZILYALLI, Isik, C. ,  ARCHER, Melissa ,  ATWATER, Harry ,  GMITTER, Thomas J. ,  HE, Gang ,  HEGEDUS, Andreas ,  HIGASHI, Gregg

IPC: H01L31/042

CPC classification number: H01L31/0735 ,  H01L31/02168 ,  Y02E10/544

Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) device may incorporate front side and/or back side light trapping techniques in an effort to absorb as many of the photons incident on the front side of the PV device as possible in the absorber layer. The light trapping techniques may include a front side antireflective coating, multiple window layers, roughening or texturing on the front and/or the back sides, a back side diffuser for scattering the light, and/or a back side reflector for redirecting the light into the interior of the PV device. With such light trapping techniques, more light may be absorbed by the absorber layer for a given amount of incident light, thereby increasing the efficiency of the PV device.

Abstract translation: 提供了与常规太阳能电池相比，用于将诸如太阳能的电磁辐射转换成电能的方法和装置，其效率提高。 光伏（PV）装置可以包括前侧和/或后侧光捕获技术，以尽量吸收在吸收层中尽可能多地入射到PV装置的前侧的光子。 光捕获技术可以包括前侧防反射涂层，多个窗口层，在前侧和/或后侧上的粗糙化或纹理化，用于散射光的后侧扩散器和/或用于将光重定向到的后侧反射器 PV设备的内部。 通过这种光捕获技术，对于给定量的入射光，更多的光可以被吸收层吸收，从而提高PV器件的效率。

公开(公告)号：WO2017070239A1

公开(公告)日：2017-04-27

申请号：PCT/US2016/057752

申请日：2016-10-19

Applicant: ALTA DEVICES, INC.

Inventor： YANG, Linlin ,  LAN, Linguang ,  FRANCE, Chris ,  HE, Gang ,  LI, Erhong ,  CORBACHO, Jose

IPC: H01L31/0224 ,  H01L31/05 ,  H01L31/0693

CPC classification number: H01L31/022425 ,  H01L31/022433 ,  H01L31/0304 ,  H01L31/0445 ,  H01L31/048 ,  H01L31/0512 ,  H01L31/0516 ,  H01L31/0693 ,  H01L31/18 ,  Y02E10/544

Abstract: System and method of providing a photovoltaic (PV) cell (200) having a cushion layer (260, 411, 412) to alleviate stress impact between a front metal contact (220) and a thin film PV layer (230). The cushion layer is made of a nonconductive material and has a plurality of vias (420) filled with a conductive material (430) to provide electrical continuity between the bus bar and the PV layer. The cushion layer may be made of a flexible material preferably with rigidity that matches the substrate. Thus, the cushion layer can effectively protect the PV layer from physical damage due to tactile contact with the front metal contact.

Abstract translation: 提供具有缓冲层（260,411,412）的光伏（PV）电池（200）的系统和方法，以减轻前金属触点（220）和薄膜PV 层（230）。 衬垫层由非导电材料制成并且具有填充有导电材料（430）的多个通孔（420），以提供汇流条和PV层之间的电连续性。 缓冲层可以由柔性材料制成，优选具有与衬底相匹配的刚性。 因此，缓冲层可以有效地保护PV层免受由于与前部金属触点的触觉接触而造成的物理损伤。

公开(公告)号：WO2017049079A1

公开(公告)日：2017-03-23

申请号：PCT/US2016/052127

申请日：2016-09-16

Applicant: ALTA DEVICES, INC.

Inventor： YANG, Linlin ,  HE, Gang ,  PATTERSON, Dan ,  GODDU, Paul ,  LAN, Liguang ,  HIGASHI, Gregg

IPC: H01L31/05 ,  H01L31/0445

CPC classification number: H01L31/0508 ,  H01L31/0445 ,  H01L31/05 ,  H01L31/0504 ,  Y02E10/50

Abstract: System and method of providing a photovoltaic (PV) cell with a complex via structure in the substrate that has a primary via for containing a conductive material and an overflow capture region for capturing an overflow of the conductive material from the primary via. The conductive filling in the primary via may serve as an electrical contact between the PV cell and another PV cell. The overflow capture region includes one or more recesses formed on the substrate back surface. When the conductive material overflows from the primary via, the one or more recesses can capture and confine the overflow within the boundary of the complex via structure. A recess may be a rectangular or circular trench proximate to or overlaying the primary via. The recesses may also be depressions formed by roughening the substrate back surface.

Abstract translation: 在衬底中提供具有复合通孔结构的光伏（PV）电池的系统和方法，其具有用于容纳导电材料的主通路和用于从主通路捕获导电材料溢出的溢流捕获区域。 主通孔中的导电填充物可以用作PV电池和另一PV电池之间的电接触。 溢出捕获区域包括形成在基板背面上的一个或多个凹部。 当导电材料从主通孔溢出时，一个或多个凹槽可以捕获并将溢流限制在复合通孔结构的边界内。 凹部可以是靠近或覆盖主通孔的矩形或圆形沟槽。 凹部也可以是通过使基底背面粗糙化而形成的凹陷。

公开(公告)号：WO2011109560A1

公开(公告)日：2011-09-09

申请号：PCT/US2011/026926

申请日：2011-03-02

Applicant: ALTA DEVICES, INC. ,  BROWN, Brian ,  BURROWS, Brian ,  BERKSTRESSOR, David ,  HE, Gang ,  GMITTER, Thomas, J.

Inventor： BROWN, Brian ,  BURROWS, Brian ,  BERKSTRESSOR, David ,  HE, Gang ,  GMITTER, Thomas, J.

IPC: H01L21/302

CPC classification number: B32B43/006 ,  H01L21/67086 ,  H01L21/67092 ,  H01L21/67132 ,  H01L21/67706 ,  H01L21/67721 ,  H01L21/6776 ,  H01L21/7813 ,  H01L31/1896 ,  Y02E10/50 ,  Y10T156/1111 ,  Y10T156/15

Abstract: Epitaxial lift off systems and methods are presented. In one embodiment a tape is disposed on the opposite side of the epitaxial material than the substrate is used to hold the epitaxial material during the etching and removal steps of the ELO process. In various embodiments, the apparatus for removing the ELO film from the substrates without damaging the ELO film may include an etchant reservoir, substrate handling and tape handling mechanisms, including mechanisms to manipulate (e.g., cause tension, peel, widen the etch gap, etc.) the lift off component during the lift off process.

Abstract translation: 提出了外延提升系统和方法。 在一个实施例中，在ELO工艺的蚀刻和去除步骤期间，将带设置在外延材料的相对侧上，而不是衬底用于保持外延材料。 在各种实施例中，用于从衬底上移除ELO膜而不损坏ELO膜的设备可以包括蚀刻剂储存器，衬底处理和带处理机构，包括操作机构（例如引起张力，剥离，加宽蚀刻间隙等） ）在剥离过程中脱离组件。

公开(公告)号：WO2010107835A2

公开(公告)日：2010-09-23

申请号：PCT/US2010/027538

申请日：2010-03-16

Applicant: ALTA DEVICES, INC. ,  HE, Gang ,  HIGASHI, Gregg ,  SORABJI, Khurshed ,  HAMAMJY, Roger ,  HEGEDUS, Andreas

Inventor： HE, Gang ,  HIGASHI, Gregg ,  SORABJI, Khurshed ,  HAMAMJY, Roger ,  HEGEDUS, Andreas

IPC: H01L21/205 ,  H05H1/34

CPC classification number: C23C16/45565 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/4557 ,  C23C16/4583 ,  C23C16/54

Abstract: Embodiments of the invention generally relate to apparatuses and methods for chemical vapor deposition (CVD) processes. In one embodiment, a CVD reactor has a reactor lid assembly disposed on a reactor body and containing a first showerhead assembly, an isolator assembly, a second showerhead assembly, and an exhaust assembly consecutively and linearly disposed next to each other on a lid support. The CVD reactor further contains first and second faceplates disposed on opposite ends of the reactor body, wherein the first showerhead assembly is disposed between the first faceplate and the isolator assembly and the exhaust assembly is disposed between the second showerhead assembly and the second faceplate. The reactor body has a wafer carrier disposed on a wafer carrier track and a lamp assembly disposed below the wafer carrier track and containing a plurality of lamps which may be utilized to heat wafers disposed on the wafer carrier.

Abstract translation: 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置和方法。 在一个实施方案中，CVD反应器具有反应器盖组件，反应器盖组件设置在反应器主体上，并且在盖支撑件上彼此相邻并且连续并线性地设置有第一淋浴头组件，隔离器组件，第二淋浴头组件和排气组件。 CVD反应器还包含设置在反应器主体的相对端上的第一和第二面板，其中第一喷头组件设置在第一面板和隔离器组件之间，排气组件设置在第二喷头组件和第二面板之间。 反应器主体具有设置在晶片载体轨道上的晶片载体和设置在晶片载体轨道下方的灯组件，并且包含可用于加热设置在晶片载体上的晶片的多个灯。

公开(公告)号：WO2010099544A2

公开(公告)日：2010-09-02

申请号：PCT/US2010/025796

申请日：2010-03-01

Applicant: ALTA DEVICES, INC. ,  HE, Gang ,  HEGEDUS, Andreas G.

Inventor： HE, Gang ,  HEGEDUS, Andreas G.

IPC: H01L31/042

CPC classification number: C30B25/18 ,  C30B29/42 ,  H01L21/02395 ,  H01L21/02425 ,  H01L21/02463 ,  H01L21/6835 ,  H01L31/03046 ,  H01L31/0735 ,  H01L31/184 ,  H01L31/1844 ,  H01L2221/6835 ,  Y02E10/544

Abstract: Embodiments of the invention generally relate to epitaxial lift off (ELO) films and methods for producing such films. Embodiments provide a method to simultaneously and separately grow a plurality of ELO films or stacks on a common support substrate which is tiled with numerous epitaxial growth substrates or surfaces. Thereafter, the ELO films are removed from the epitaxial growth substrates by an etching step during an ELO process. The tiled growth substrate contains the epitaxial growth substrates disposed on the support substrate may be reused to grow further ELO films. In one embodiment, a tiled growth substrate is provided which includes two or more gallium arsenide growth substrates separately disposed on a support substrate having a coefficient of thermal expansion within a range from about 5 10-6 C-1 to about 9 10-6 C-1.

Abstract translation: 本发明的实施方案一般涉及外延剥离膜（ELO）膜及其制造方法。 实施例提供了一种在共同的支撑衬底上同时且分开地生长多个ELO膜或叠层的方法，所述共同支撑衬底被铺设有许多外延生长衬底或表面。 此后，在ELO工艺期间通过蚀刻步骤从外延生长衬底去除ELO膜。 平铺的生长衬底包含设置在支撑衬底上的外延生长衬底可以被再次用于生长另外的ELO膜。 在一个实施例中，提供了一种平铺生长衬底，其包括分别设置在支撑衬底上的两个或更多个砷化镓生长衬底，其具有在约5×10 -6 C -1至约9×10 -6 C的范围内的热膨胀系数 -1。

公开(公告)号：WO2020000334A1

公开(公告)日：2020-01-02

申请号：PCT/CN2018/093525

申请日：2018-06-29

Applicant: ALTA DEVICES, INC. ,  DONGTAI HI-TECH EQUIPMENT TECHNOLOGY CO., LTD. ,  HE, Gang ,  WASHINGTON, Lori ,  YAO, Liqiang ,  NAN, Jianhui ,  ZHANG, Xinyun

Inventor： HE, Gang ,  WASHINGTON, Lori ,  YAO, Liqiang ,  NAN, Jianhui ,  ZHANG, Xinyun

IPC: C23C16/44

Abstract: A system for removing toxic waste from an exhaust stream produced by a high-volume metal organic chemical vapor deposition (MOCVD) (120) operation, comprising: a first cold trap (130) configured to operate at a first pressure and condense and separate toxic materials in the exhaust stream for removal as solid waste; a pump (140) connected to the first cold trap (130) and configured to increase a pressure of the exhaust stream; a hot cracker (150) connected to the pump (140) and configured to decompose toxic materials remaining in the exhaust stream after the first cold trap (130); a second cold trap (160) connected to the hot cracker (150) and configured to operate at a second pressure higher than the first pressure and condense the decomposed toxic materials remaining in the exhaust stream for removal as solid waste; and a scrubber (170) connected to the second cold trap (160) and configured to absorb toxic materials remaining in the exhaust stream after the second cold trap (160). Also disclosed is a method of removing toxic waste from an exhaust stream produced by a high-volume metal organic chemical vapor deposition (MOCVD) (120) operation.

公开(公告)号：WO2019067177A1

公开(公告)日：2019-04-04

申请号：PCT/US2018/049869

申请日：2018-09-07

Applicant: ALTA DEVICES, INC.

Inventor： WASHINGTON, Lori D. ,  BOUR, David P. ,  HIGASHI, Gregg ,  HE, Gang

IPC: H01L21/20 ,  H01L31/18

Abstract: Aspects of the disclosure relate to processes for epitaxial growth of Group III/V materials at high rates, such as about 30 µm/hr or greater, for example, about 40 µm/hr, about 50 µm/hr, about 55 µm/hr, about 60 µm/hr, about 70 µm/hr, about 80 µm/hr, and about 90-120 µm/hr deposition rates. The Group III/V materials or films may be utilized in solar, semiconductor, or other electronic device applications. The Group III/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a vapor deposition process. Subsequently, the Group III/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III/V materials are thin films of epitaxially grown layers containing gallium arsenide, gallium aluminum arsenide, gallium indium arsenide, gallium indium arsenide nitride, gallium aluminum indium phosphide, phosphides thereof, nitrides thereof, derivatives thereof, alloys thereof, or combinations thereof.