公开(公告)号：WO2016111789A1

公开(公告)日：2016-07-14

申请号：PCT/US2015/064295

申请日：2015-12-07

Applicant: APPLE INC.

Inventor： BOUR, David P. ,  MCGRODDY, Kelly ,  HAEGER, Daniel Arthur ,  PERKINS, James Michael ,  CHAKRABORTY, Arpan ,  DROLET, Jean-Jacques P.

IPC: H01L33/44

CPC classification number: H01L33/06 ,  H01L33/20 ,  H01L33/24 ,  H01L33/30 ,  H01L33/38 ,  H01L33/44 ,  H01L33/56

Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

Abstract translation: 公开了LED结构，以减少沿着垂直LED的侧壁的非辐射侧壁复合，包括跨越顶部电流扩散层的p-n二极管侧壁，底部电流扩展层以及顶部电流扩展层和底部电流扩散层之间的有源层。

公开(公告)号：WO2018005286A1

公开(公告)日：2018-01-04

申请号：PCT/US2017/039038

申请日：2017-06-23

Applicant: APPLE INC.

Inventor： BOUR, David P. ,  MCGRODDY, Kelly ,  HAEGER, Daniel Arthur ,  PERKINS, James Michael ,  CHAKRABORTY, Arpan ,  DROLET, Jean-Jacques P. ,  SIZOV, Dmitry S.

IPC: H01L33/14 ,  H01L33/20

Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

Abstract translation: 公开了LED结构以减少沿垂直LED的侧壁的非辐射侧壁复合，所述垂直LED包括跨越顶部电流扩展层，底部电流扩展层和顶部电流扩展层之间的活性层的pn二极管侧壁 和底部电流扩散层。