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公开(公告)号:WO2020009766A1
公开(公告)日:2020-01-09
申请号:PCT/US2019/035180
申请日:2019-06-03
Applicant: APPLIED MATERIALS, INC.
Inventor: BALARAMAN, Karthikeyan , BINDIGANAVALE, Sathyanarayana , PATIBANDLA, Rajasekhar , RAMASAMY, Balamurugan , SHAH, Kartik , KELKAR, Umesh M. , LARSSON, Mats , PAPKE, Kevin A. , LU, William M.
Abstract: Embodiments of the present disclosure are directed towards a protective multilayer coating for process chamber components exposed to temperatures from about 20°C to about 300°C during use of the process chamber. The protective multilayer coating comprises a bond layer and a top layer, the bond layer is formed on a chamber component to reduce the stress between the top layer and the chamber component. The reduced stress decreases or prevents particle shedding from the top layer of the multilayer coating during and after use of the process chamber. The bond layer comprises titanium, titanium nitride, aluminum, or combinations thereof, and the top layer comprises tungsten nitride.
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公开(公告)号:WO2020013918A1
公开(公告)日:2020-01-16
申请号:PCT/US2019/033383
申请日:2019-05-21
Applicant: APPLIED MATERIALS, INC.
Inventor: BALARAMAN, Karthikeyan , RAMASAMY, Balamurugan , SHAH, Kartik , LARSSON, Mats , PAPKE, Kevin A. , PATIBANDLA, Rajasekhar , BINDIGANAVALE, Sathyanarayana , KELKAR, Umesh M.
IPC: H01L21/285 , H01L21/768 , H01L21/02
Abstract: Embodiments of the present disclosure provide protective coatings, i.e., diffusion and thermal barrier coatings, for aluminum alloy substrates. In particular, embodiments described herein provide a protective layer stack comprising a tantalum nitride layer disposed on an aluminum alloy substrate and a ceramic layer disposed on the tantalum nitride layer. In some embodiments, the aluminum alloy substrates comprise processing chambers and processing chamber components used in the field of electronic device manufacturing, e.g., semiconductor device manufacturing. In one embodiment, an article includes a substrate, a tantalum nitride layer disposed on the substrate, and a ceramic layer disposed on the tantalum nitride layer.
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