Abstract:
The present disclosure generally relates to methods of electro-chemically forming yttria or yttrium oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of yttria or yttrium oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited yttria or yttrium oxide thereon.
Abstract:
The present disclosure generally relates to methods of electro-chemically forming aluminum or aluminum oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of aluminum or aluminum oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited aluminum or aluminum oxide thereon.
Abstract:
Embodiments of the present disclosure are directed towards a protective multilayer coating for process chamber components exposed to temperatures from about 20°C to about 300°C during use of the process chamber. The protective multilayer coating comprises a bond layer and a top layer, the bond layer is formed on a chamber component to reduce the stress between the top layer and the chamber component. The reduced stress decreases or prevents particle shedding from the top layer of the multilayer coating during and after use of the process chamber. The bond layer comprises titanium, titanium nitride, aluminum, or combinations thereof, and the top layer comprises tungsten nitride.
Abstract:
Embodiments of the disclosure generally relate to a system, apparatus and method for testing a coating over a semiconductor chamber component. In one embodiment, a test station comprises a hollow tube, a sensor coupled to a top end of the tube and a processing system communicatively coupled to the sensor. The hollow tube has an open bottom end configured for sealingly engaging a coating layer of the semiconductor chamber component. The sensor is configured to detect the presence of a gaseous byproduct of a reaction between a reagent disposed in the hollow tube and a base layer disposed under the coating layer. The processing system is configured to determine exposure of the base layer through the coating layer in response to information about the presence of the gaseous byproduct. In another embodiment, the processing system is communicatively coupled to each sensor of a plurality of test stations.
Abstract:
The implementations described herein generally relate to 30nm in-line liquid particle count testing equipment which analyses and cleans semiconductor processing equipment. More specifically, the implementations described relate to a system for diluting, analyzing, and modifying fluids to enable the observation of the contents of the fluids. A dilution sampling tool is coupled with a liquid particle detector for reading the contents of an extraction solution containing particles from semiconductor processing equipment, such as a liner, a shield, a faceplate, or a showerhead, in a cleaning tank. As such, accurate liquid particle readings may be had which reduce oversaturation of the particle detector.
Abstract:
The present disclosure relates to protective multilayer coatings for processing chambers and processing chamber components. In one embodiment, a multilayer protective coating includes a metal nitride layer and an oxide layer disposed thereon. In one embodiment, the multilayer protective coating further includes an oxynitride interlayer and/or an oxyfluoride layer. The multilayer protective coating may be formed on a metal alloy or ceramic substrate, such as a processing chamber or a processing chamber component used in the field of electronic device manufacturing, e.g., semiconductor device manufacturing. In one embodiment, the metal nitride layer and the oxide layer are deposited on the substrate by atomic layer deposition.
Abstract:
Embodiments of the present disclosure provide protective coatings, i.e., diffusion and thermal barrier coatings, for aluminum alloy substrates. In particular, embodiments described herein provide a protective layer stack comprising a tantalum nitride layer disposed on an aluminum alloy substrate and a ceramic layer disposed on the tantalum nitride layer. In some embodiments, the aluminum alloy substrates comprise processing chambers and processing chamber components used in the field of electronic device manufacturing, e.g., semiconductor device manufacturing. In one embodiment, an article includes a substrate, a tantalum nitride layer disposed on the substrate, and a ceramic layer disposed on the tantalum nitride layer.
Abstract:
Disclosed herein is an apparatus for cleaning a process kit comprising a body, a cleaning source, and a control system. The body is formed from multiple modules configured to couple to, and receive therein, a process kit part. A plurality of cleaning agents may be sequentially delivered to the body in order to remove the particles disposed on the process part.