公开(公告)号：WO2009155208A3

公开(公告)日：2009-12-23

申请号：PCT/US2009/047103

申请日：2009-06-11

Applicant: APPLIED MATERIALS, INC. ,  CAO, Yong ,  EWERT, Maurice E. ,  TANG, Xianmin ,  MILLER, Keith A. ,  LUBBEN, Daniel C. ,  KELKAR, Umesh M. ,  GUNG, Tza-Jing ,  SUBRAMANI, Anantha K.

Inventor： CAO, Yong ,  EWERT, Maurice E. ,  TANG, Xianmin ,  MILLER, Keith A. ,  LUBBEN, Daniel C. ,  KELKAR, Umesh M. ,  GUNG, Tza-Jing ,  SUBRAMANI, Anantha K.

IPC: C23C14/34 ,  C23C14/54

Abstract: Embodiments of the present invention generally relate to an apparatus and method for uniform sputter depositing of materials into the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a sputter deposition system includes a collimator that has apertures having aspect ratios that decrease from a central region of the collimator to a peripheral region of the collimator. In one embodiment, the collimator is coupled to a grounded shield via a bracket member that includes a combination of internally and externally threaded fasteners. In another embodiment, the collimator is integrally attached to a grounded shield. In one embodiment, a method of sputter depositing material includes pulsing the bias on the substrate support between high and low values.

公开(公告)号：WO2016126403A1

公开(公告)日：2016-08-11

申请号：PCT/US2016/013583

申请日：2016-01-15

Applicant: APPLIED MATERIALS, INC.

Inventor： NARENDRNATH, Kadthala R. ,  RAJ, Govinda ,  YOSHIDOME, Goichi ,  VASANTHA, Bopanna Ichettira ,  KELKAR, Umesh M.

IPC: H01L21/203

CPC classification number: H01J37/32477 ,  B33Y80/00 ,  H01J37/3211 ,  H01J37/32467 ,  H01J37/32807 ,  H01J37/32853 ,  H01J37/32871 ,  H01J37/3288

Abstract: A chamber component for a processing chamber is disclosed herein. In one embodiment, a chamber component for a processing chamber includes a component part body having unitary monolithic construction. The component part body has a textured surface. The textured surface includes a plurality of independent engineered macro features integrally formed with the component part body. The engineered macro features include a macro feature body extending from the textured surface.

Abstract translation: 本文公开了一种用于处理室的腔室部件。 在一个实施例中，用于处理室的腔室部件包括具有单一整体结构的部件主体。 组件部分主体具有纹理表面。 纹理表面包括与部件主体一体形成的多个独立的工程宏观特征。 设计的宏观特征包括从纹理表面延伸的宏观特征体。

公开(公告)号：WO2012125469A2

公开(公告)日：2012-09-20

申请号：PCT/US2012/028521

申请日：2012-03-09

Applicant: APPLIED MATERIALS, INC. ,  EWERT, Maurice E. ,  SUBRAMANI, Anantha K. ,  KELKAR, Umesh M. ,  BALASUBRAMANYAM, Chandrasekhar ,  RANISH, Joseph M.

Inventor： EWERT, Maurice E. ,  SUBRAMANI, Anantha K. ,  KELKAR, Umesh M. ,  BALASUBRAMANYAM, Chandrasekhar ,  RANISH, Joseph M.

IPC: H01L21/205

CPC classification number: C23C14/5806 ,  C23C14/34 ,  C23C14/3435 ,  C23C14/541 ,  C23C16/4581 ,  C23C16/481 ,  H01J37/3411 ,  H01J37/3488 ,  H01L21/02104 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/76882

Abstract: Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.

Abstract translation: 公开了用于处理基材的方法和设备。 该设备是一个双功能处理室，可以在基板上执行材料处理和热处理。 腔室具有布置在腔室的处理位置和运输位置之间的环形辐射源。 升降杆的长度足以将基板保持在加工位置，同时将基板支撑件降低到辐射源平面下方以对基板进行辐射加热。 处理在其第一表面中形成有孔的衬底的方法包括在孔中的第一表面上沉积材料并通过加热与第一表面相对的衬底的第二表面来回流材料。 然后可以沉积第二种材料，部分或完全填充孔。 或者，可以执行循环沉积/回流工艺。

公开(公告)号：WO2020149936A1

公开(公告)日：2020-07-23

申请号：PCT/US2019/062320

申请日：2019-11-20

Applicant: APPLIED MATERIALS, INC.

Inventor： PARIMI, Venkata Sharat Chandra ,  HUANG, Zubin ,  LI, Jian ,  RADHAKRISHNAN, Satish ,  CHENG, Rui ,  KEDLAYA, Diwakar N. ,  ROCHA, Juan Carlos ,  KELKAR, Umesh M. ,  JANAKIRAMAN, Karthik ,  BOBEK, Sarah Michelle ,  KULSHRESHTHA, Prashant Kumar ,  PRABHAKAR, Vinay K. ,  KWON, Byung Seok

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/027 ,  H01L21/311

Abstract: Embodiments of the present disclosure generally relate to a pedestal for increasing temperature uniformity in a substrate supported thereon. The pedestal comprises a body having a heater embedded therein. The body comprises a patterned surface that includes a first region having a first plurality of posts extending from a base surface of the body at a first height, and a second region surrounding the central region having a second plurality of posts extending from the base surface at a second height that is greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts are substantially coplanar and define a substrate receiving surface.

公开(公告)号：WO2020009766A1

公开(公告)日：2020-01-09

申请号：PCT/US2019/035180

申请日：2019-06-03

Applicant: APPLIED MATERIALS, INC.

Inventor： BALARAMAN, Karthikeyan ,  BINDIGANAVALE, Sathyanarayana ,  PATIBANDLA, Rajasekhar ,  RAMASAMY, Balamurugan ,  SHAH, Kartik ,  KELKAR, Umesh M. ,  LARSSON, Mats ,  PAPKE, Kevin A. ,  LU, William M.

IPC: C23C16/44 ,  C23C14/06 ,  C23C14/02 ,  C23C28/00 ,  C23C28/04 ,  H01J37/32 ,  C23C16/505

Abstract: Embodiments of the present disclosure are directed towards a protective multilayer coating for process chamber components exposed to temperatures from about 20°C to about 300°C during use of the process chamber. The protective multilayer coating comprises a bond layer and a top layer, the bond layer is formed on a chamber component to reduce the stress between the top layer and the chamber component. The reduced stress decreases or prevents particle shedding from the top layer of the multilayer coating during and after use of the process chamber. The bond layer comprises titanium, titanium nitride, aluminum, or combinations thereof, and the top layer comprises tungsten nitride.

公开(公告)号：WO2020013918A1

公开(公告)日：2020-01-16

申请号：PCT/US2019/033383

申请日：2019-05-21

Applicant: APPLIED MATERIALS, INC.

Inventor： BALARAMAN, Karthikeyan ,  RAMASAMY, Balamurugan ,  SHAH, Kartik ,  LARSSON, Mats ,  PAPKE, Kevin A. ,  PATIBANDLA, Rajasekhar ,  BINDIGANAVALE, Sathyanarayana ,  KELKAR, Umesh M.

IPC: H01L21/285 ,  H01L21/768 ,  H01L21/02

Abstract: Embodiments of the present disclosure provide protective coatings, i.e., diffusion and thermal barrier coatings, for aluminum alloy substrates. In particular, embodiments described herein provide a protective layer stack comprising a tantalum nitride layer disposed on an aluminum alloy substrate and a ceramic layer disposed on the tantalum nitride layer. In some embodiments, the aluminum alloy substrates comprise processing chambers and processing chamber components used in the field of electronic device manufacturing, e.g., semiconductor device manufacturing. In one embodiment, an article includes a substrate, a tantalum nitride layer disposed on the substrate, and a ceramic layer disposed on the tantalum nitride layer.

公开(公告)号：WO2015183483A1

公开(公告)日：2015-12-03

申请号：PCT/US2015/029195

申请日：2015-05-05

Applicant: APPLIED MATERIALS, INC.

Inventor： YUAN, Xiaoxiong ,  SHAH, Kartik ,  KASHYAP, Dhritiman Subha ,  KELKAR, Umesh M. ,  WU, Dien-Yeh ,  RASHEED, Muhammad M.

IPC: C23C16/455

CPC classification number: C23C16/45544 ,  C23C16/08 ,  C23C16/34 ,  C23C16/45502 ,  C23C16/458

Abstract: Embodiments of methods and apparatus for improving gas flow in a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body and a chamber lid defining an interior volume; a substrate support disposed within the interior volume and having a support surface to support a substrate; a gas passageway disposed in the lid opposite the substrate support to supply a gas mixture to the interior volume, the gas passageway including a first portion and a second portion; a first gas inlet disposed in the first portion to supply a first gas to the first portion of the gas passageway; and a second gas inlet disposed in the second portion to supply a second gas to the second portion.

Abstract translation: 本文提供了用于改善衬底处理室中的气体流动的方法和装置的实施例。 在一些实施例中，衬底处理室包括：室主体和限定内部容积的室盖; 衬底支撑件，其设置在所述内部容积内并具有用于支撑衬底的支撑表面; 气体通道，设置在与基板支撑件相对的盖中，以将气体混合物供应到内部空间，气体通道包括第一部分和第二部分; 设置在第一部分中以将第一气体供应到气体通道的第一部分的第一气体入口; 以及设置在所述第二部分中以将第二气体供应到所述第二部分的第二气体入口。

公开(公告)号：WO2015175163A1

公开(公告)日：2015-11-19

申请号：PCT/US2015/026687

申请日：2015-04-20

Applicant: APPLIED MATERIALS, INC.

Inventor： SHAH, Kartik ,  PRASAD, Chaitanya A. ,  BAUTISTA, Kevin J. ,  TOBIN, Jeffrey ,  KELKAR, Umesh M. ,  HAWRYLCHAK, Lara

IPC: H01L21/02

CPC classification number: C23C16/45565 ,  C23C16/458 ,  C23C16/4584 ,  H01L21/67115

Abstract: Embodiments described herein relate to a showerhead having a reflector plate with a gas injection insert for radially distributing gas. In one embodiment, a showerhead assembly includes a reflector plate and a gas injection insert. The reflector plate includes at least one gas injection port. The gas injection insert is disposed in the reflector plate, and includes a plurality of apertures. The gas injection insert also includes a baffle plate disposed in the gas injection insert, wherein the baffle plate also includes a plurality of apertures. A first plenum is formed between a first portion of the baffle plate and the reflector plate, and a second plenum is formed between a second portion of the baffle plate and the reflector plate. The plurality of apertures of the gas injection insert and the plurality of apertures of the baffle plate are not axially aligned.

Abstract translation: 本文所述的实施例涉及一种具有反射板的喷头，其具有用于径向分布气体的气体注射插入件。 在一个实施例中，喷头组件包括反射板和气体注射插入件。 反射板包括至少一个气体注入口。 气体注射插入件设置在反射板中，并且包括多个孔。 气体注射插入件还包括设置在气体注射插入件中的挡板，其中挡板还包括多个孔。 在挡板的第一部分和反射板之间形成第一增压室，并且在挡板的第二部分和反射板之间形成第二增压室。 气体注射插入物的多个孔和挡板的多个孔不轴向对齐。

公开(公告)号：WO2014172174A1

公开(公告)日：2014-10-23

申请号：PCT/US2014/033604

申请日：2014-04-10

Applicant: APPLIED MATERIALS, INC. ,  KELKAR, Umesh M. ,  BERA, Kallol ,  RAMANATHAN, Karthik ,  KWONG, Garry K. ,  YUDOVSKY, Joseph

Inventor： KELKAR, Umesh M. ,  BERA, Kallol ,  RAMANATHAN, Karthik ,  KWONG, Garry K. ,  YUDOVSKY, Joseph

IPC: H01L21/324 ,  H01L21/683 ,  H01L21/205

CPC classification number: C23C16/46 ,  C23C16/45544 ,  C23C16/4584 ,  C23C16/481 ,  C23C16/52 ,  H01L21/67115

Abstract: Described are apparatus and methods for processing a plurality of semiconductor wafers on a susceptor assembly so that the temperature across the susceptor assembly is uniform. A plurality of linear lamps are positioned and controlled in zones to provide uniform heating.

Abstract translation: 描述了用于处理基座组件上的多个半导体晶片的装置和方法，使得基座组件上的温度是均匀的。 多个线性灯被定位和控制在区域中以提供均匀的加热。

公开(公告)号：WO2014123667A1

公开(公告)日：2014-08-14

申请号：PCT/US2014/011462

申请日：2014-01-14

Applicant: APPLIED MATERIALS, INC.

Inventor： TJANDRA, Agus Sofian ,  GHOSH, Kalyanjit ,  OLSEN, Christopher S. ,  KELKAR, Umesh M.

IPC: H01L21/324

CPC classification number: H01L21/67115 ,  H01L21/67017 ,  H01L21/6719 ,  Y10T137/87652

Abstract: Methods and apparatus for mixing and delivery of process gases are provided herein. In some embodiments, a gas injection apparatus includes an elongate top plenum comprising a first gas inlet; an elongate bottom plenum disposed beneath and supporting the top plenum, the bottom plenum comprising a second gas inlet; a plurality of first conduits disposed through the bottom plenum and having first ends fluidly coupled to the top plenum and second ends disposed beneath the bottom plenum; and a plurality of second conduits having first ends fluidly coupled to the bottom plenum and second ends disposed beneath the bottom plenum; wherein a lower end of the bottom plenum is adapted to fluidly couple the gas injection apparatus to a mixing chamber such that the second ends of the plurality of first conduits and the second ends of the plurality of second conduits are in fluid communication with the mixing chamber.

Abstract translation: 本文提供了用于混合和输送工艺气体的方法和装置。 在一些实施例中，气体注入装置包括细长顶部增压室，其包括第一气体入口; 设置在所述顶部增压室下方并支撑所述顶部增压室的细长底部增压室，所述底部增压室包括第二气体入口; 多个第一导管，其设置穿过所述底部集气室，并且具有流体地联接到所述顶部增压室的第一端和设置在所述底部增压室下方的第二端; 以及多个第二导管，其具有流体地联接到所述底部增压室的第一端和设置在所述底部增压室下方的第二端; 其中所述底部增压室的下端适于将所述气体注入装置流体地耦合到混合室，使得所述多个第一导管的第二端和所述多个第二导管的所述第二端与所述混合室流体连通 。