公开(公告)号：WO2023091268A1

公开(公告)日：2023-05-25

申请号：PCT/US2022/047473

申请日：2022-10-21

Applicant: APPLIED MATERIALS, INC.

Inventor： DHINDSA, Rajinder ,  COLLINS, Kenneth S. ,  RICE, Michael R. ,  CARDUCCI, James D.

IPC: H01J37/32

Abstract: A plasma treatment chamber comprises one or more sidewalls. A support surface within the one or more sidewalls holds a workpiece. A first gas injector along the one or more sidewalls injects a first gas flow in a first direction generally parallel to and across a surface of the workpiece. A first pump port along the one or more sidewalls generally opposite of the first gas injector pumps out the first gas flow. A second gas injector along the one or more sidewalls injects a second gas flow in a second direction generally parallel to and across the surface of the workpiece. A second pump port along the one or more sidewalls generally opposite of the second gas injector pumps out the second gas flow. Conductance control rings modulate conductance of the pump ports and are located proximate to plasma screens at a top of the pump ports.

公开(公告)号：WO2023069633A1

公开(公告)日：2023-04-27

申请号：PCT/US2022/047297

申请日：2022-10-20

Applicant: APPLIED MATERIALS, INC.

Inventor： DHINDSA, Rajinder

IPC: H01J37/32

Abstract: Embodiments herein provide plasma processing chambers and methods configured for fine-tuning and control over a plasma sheath formed during the plasma- assisted processing of a semiconductor substrate. Embodiments include a sheath tuning scheme, including plasma processing chambers and methods, which can be used to tailor one or more characteristics of a plasma sheath formed between a bulk plasma and a substrate surface. Generally, the sheath tuning scheme provides differently configured pulsed voltage (PV) waveforms to a plurality of bias electrodes embedded beneath the surface of a substrate support in an arrangement where each of the electrodes can be used to differentially bias a surface region of a substrate positioned on the support. The sheath tuning scheme disclosed herein can thus be used to adjust and/or control the directionality, and energy and angular distributions of ions that bombard a substrate surface during a plasma-assisted etch process.

公开(公告)号：WO2021252812A1

公开(公告)日：2021-12-16

申请号：PCT/US2021/036887

申请日：2021-06-10

Applicant: APPLIED MATERIALS, INC.

Inventor： FRANKLIN, Timothy Joseph ,  DHINDSA, Rajinder ,  BYUN, Daniel Sang ,  WONG, Carlaton ,  PERRY, Joseph ,  ROGERS, James Hugh

IPC: H01J37/32 ,  H01L21/3065 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32568 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32651 ,  H01L21/67069 ,  H01L21/68742

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method of processing a substrate in an etch process chamber includes: pulsing RF power from an RF bias power supply to a lower electrode disposed in a substrate support of the etch process chamber at a first frequency of about 200 kHz to about 700 kHz over a first period to create a plasma in a process volume of the etch process chamber, wherein a conductance liner surrounds the process volume to provide a ground path for an upper electrode of the etch process chamber; and pulsing RF power from the RF bias power supply to the lower electrode at a second frequency of about 2 MHz to about 13.56 MHz over the first period.

公开(公告)号：WO2017052789A1

公开(公告)日：2017-03-30

申请号：PCT/US2016/045196

申请日：2016-08-02

Applicant: APPLIED MATERIALS, INC.

Inventor： DHINDSA, Rajinder

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  C23C14/22 ,  C23C16/505 ,  H01J37/32357 ,  H01J37/32633 ,  H01J37/32715 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67207

Abstract: Embodiments of an apparatus having an improved coil antenna assembly with a remote plasma source and an electron beam generation system that can provide enhanced plasma in a processing chamber. In one embodiment, a plasma processing chamber includes a chamber body, a lid enclosing an interior volume of the chamber body, a substrate support disposed in the interior volume, a dual inductively coupled source including a coil antenna assembly coupled to the chamber body through the lid, and a remote plasma source coupled to the chamber body through the lid.

Abstract translation: 具有改进的具有远程等离子体源的线圈天线组件和能够在处理室中提供增强等离子体的电子束发生系统的装置的实施例。 在一个实施例中，等离子体处理室包括室主体，封闭室主体的内部容积的盖，设置在内部空间中的基板支撑件，双电感耦合源，其包括通过所述腔体连接到腔体的线圈天线组件 盖和通过盖耦合到室主体的远程等离子体源。

公开(公告)号：WO2022260836A1

公开(公告)日：2022-12-15

申请号：PCT/US2022/029791

申请日：2022-05-18

Applicant: APPLIED MATERIALS, INC.

Inventor： DHINDSA, Rajinder ,  CUI, Linying ,  ROGERS, James

IPC: H01J37/32 ,  H01L21/683

Abstract: Embodiments provided herein generally include plasma processing systems configured to preferentially clean desired surfaces of a substrate support assembly by manipulating one or more characteristics of an in-situ plasma and related methods. In one embodiment, a plasma processing method includes generating a plasma in a processing region defined by a chamber lid and a substrate support assembly, exposing an edge ring and a substrate supporting surface to the plasma, and establishing a pulsed voltage (PV) waveform at the edge control electrode.

公开(公告)号：WO2022260834A1

公开(公告)日：2022-12-15

申请号：PCT/US2022/029700

申请日：2022-05-17

Applicant: APPLIED MATERIALS, INC.

Inventor： CUI, Linying ,  ROGERS, James ,  DHINDSA, Rajinder ,  RAMASWAMY, Kartik

IPC: H01J37/32

Abstract: Embodiments provided herein include an apparatus and methods for the plasma processing of a substrate in a processing chamber. In some embodiments, aspects of the apparatus and methods are directed to reducing detectivity in features formed on the surface of the substrate, improving plasma etch rate, and increasing selectivity of etching material to mask and/or etching material to stop layer. In some embodiments, the apparatus and methods enable processes that can be used to prevent or reduce the effect of trapped charges, disposed within features formed on a substrate, on the etch rate and defect formation. In some embodiments, the plasma processing methods include the synchronization of the delivery of pulsed-voltage (PV) waveforms, and alternately the delivery of a PV waveform and a radio frequency (RF) waveform, so as to allow for the independent control of generation of electrons that are provided, during one or more stages of a PV waveform cycle, to neutralize the trapped charges formed in the features formed on the substrate.

公开(公告)号：WO2022192206A1

公开(公告)日：2022-09-15

申请号：PCT/US2022/019277

申请日：2022-03-08

Applicant: APPLIED MATERIALS, INC.

Inventor： SULYMAN, Alexander ,  WONG, Carlaton ,  DHINDSA, Rajinder ,  FRANKLIN, Timothy Joseph ,  BABAYAN, Steven ,  HUSAIN, Anwar ,  ROGERS, James Hugh ,  CHANG, Xue Yang

IPC: H01L21/687 ,  H01L21/683 ,  H01L21/67

Abstract: Methods and apparatus for a lift pin mechanism for substrate processing chambers are provided herein. In some embodiments, the lift pin mechanism includes a lift pin comprising a shaft with a top end, a bottom end, and a coupling end at the bottom end; a bellows assembly disposed about the shaft. The bellows assembly includes an upper bellows flange having an opening for axial movement of the shaft; a bellows having a first end coupled to a lower surface of the upper bellows flange such that the shaft extends into a central volume surrounded by the bellows; and a bellows guide assembly coupled to a second end of the bellows to seal the central volume. The shaft is coupled to the bellows guide assembly at the coupling end. The bellows guide assembly is axially movable to move the lift pin with respect to the upper bellows flange.

公开(公告)号：WO2021188605A1

公开(公告)日：2021-09-23

申请号：PCT/US2021/022647

申请日：2021-03-17

Applicant: APPLIED MATERIALS, INC.

Inventor： CHO, Jaeyong ,  DHINDSA, Rajinder ,  ROGERS, James ,  HUSAIN, Anwar

IPC: H01L21/683 ,  H01L21/687 ,  H01L21/67 ,  H01J37/32 ,  H02N13/00

Abstract: Embodiments of substrate supports are provided herein. In some embodiments, a substrate support for use in a substrate processing chamber includes a ceramic plate having a first side configured to support a substrate and a second side opposite the first side, wherein the ceramic plate includes an electrode embedded in the ceramic plate; a ceramic ring disposed about the ceramic plate and having a first side and a second side opposite the first side, wherein the ceramic ring includes a chucking electrode and a heating element embedded in the ceramic ring; and a cooling plate coupled to the second side of the ceramic plate and the second side of the ceramic ring, wherein the cooling plate includes a radially inner portion, a radially outer portion, and a thermal break disposed therebetween.

公开(公告)号：WO2020236303A1

公开(公告)日：2020-11-26

申请号：PCT/US2020/024472

申请日：2020-03-24

Applicant: APPLIED MATERIALS, INC.

Inventor： PARK, Sang Wook ,  CUI, Xiaorui ,  SRINIVASAN, Sunil ,  DHINDSA, Rajinder ,  YAO, Zhonghua ,  YU, Lin ,  LUERE, Olivier ,  KIM, Jonathan Sungehul

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

Abstract: Embodiments of the present disclosure provide methods and apparatus for forming a desired material layer on a substrate between, during, prior to or after a patterning process. In one embodiment, a method for forming a material layer on a substrate includes pulsing a first gas precursor comprising an organic silicon compound onto a surface of a substrate. The method also includes disposing a first element from the first gas precursor onto the surface of the substrate. The method further includes maintaining a substrate temperature less than about 110 degrees Celsius while disposing the first element. A second gas precursor is pulsed onto the surface of the substrate. Additionally, the method includes disposing a second element from the second gas precursor to the first element on the surface of the substrate.

公开(公告)号：WO2020154310A1

公开(公告)日：2020-07-30

申请号：PCT/US2020/014453

申请日：2020-01-21

Applicant: APPLIED MATERIALS, INC.

Inventor： DORF, Leonid ,  KAMENETSKIY, Evgeny ,  ROGERS, James ,  LUERE, Olivier ,  DHINDSA, Rajinder ,  PLOTNIKOV, Viacheslav

IPC: H01J37/32

Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.