公开(公告)号：WO2021252229A1

公开(公告)日：2021-12-16

申请号：PCT/US2021/035336

申请日：2021-06-02

Applicant: APPLIED MATERIALS, INC.

Inventor： FENG, Lili ,  DAI, Yuqiong ,  SACHAN, Madhur ,  FREED, Regina ,  HWANG, Ho-yung David

IPC: H01L21/3213 ,  H01L21/033 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L21/76832 ,  H01L21/76837 ,  H01L21/76885 ,  H01L23/5226

Abstract: Apparatuses and methods to provide fully self-aligned first metallization lines, M1, via, and second metallization lines, M2, are described. A first metallization line comprises a set of first conductive lines extending along a first direction on a first insulating layer on a substrate; a second metallization line comprising a set of second conductive lines on an etch stop layer above the first metallization line, the set of second conductive lines extending along a second direction that crosses the first direction at an angle; and at least one via between the first metallization line and the second metallization line, the at least one via comprising a via metallization layer, wherein the at least one via is self-aligned along the second direction to one of the first metallization lines and the at least one via is self-aligned along the first direction to one of the second metallization lines, the second direction crossing the first direction at an angle.