公开(公告)号：WO2022005855A1

公开(公告)日：2022-01-06

申请号：PCT/US2021/038758

申请日：2021-06-23

Applicant: APPLIED MATERIALS, INC.

Inventor： DAI, Yuqiong ,  SACHAN, Madhur ,  FREED, Regina ,  HWANG, Hoyung, David

IPC: G03F7/36 ,  G03F7/004 ,  G03F7/20 ,  C23C16/06 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/0047 ,  G03F7/162 ,  G03F7/40

Abstract: Embodiments disclosed herein include a method of developing a metal oxo photoresist with a non-wet process. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a chamber. In an embodiment, the metal oxo photoresist comprises exposed regions and unexposed regions, and the unexposed regions comprise a higher carbon concentration than the exposed regions. In an embodiment, the method further comprises flowing a gas into the chamber, wherein the gas reacts with the unexposed regions to produce a volatile byproduct.

公开(公告)号：WO2021252229A1

公开(公告)日：2021-12-16

申请号：PCT/US2021/035336

申请日：2021-06-02

Applicant: APPLIED MATERIALS, INC.

Inventor： FENG, Lili ,  DAI, Yuqiong ,  SACHAN, Madhur ,  FREED, Regina ,  HWANG, Ho-yung David

IPC: H01L21/3213 ,  H01L21/033 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L21/76832 ,  H01L21/76837 ,  H01L21/76885 ,  H01L23/5226

Abstract: Apparatuses and methods to provide fully self-aligned first metallization lines, M1, via, and second metallization lines, M2, are described. A first metallization line comprises a set of first conductive lines extending along a first direction on a first insulating layer on a substrate; a second metallization line comprising a set of second conductive lines on an etch stop layer above the first metallization line, the set of second conductive lines extending along a second direction that crosses the first direction at an angle; and at least one via between the first metallization line and the second metallization line, the at least one via comprising a via metallization layer, wherein the at least one via is self-aligned along the second direction to one of the first metallization lines and the at least one via is self-aligned along the first direction to one of the second metallization lines, the second direction crossing the first direction at an angle.