公开(公告)号：WO2020132175A1

公开(公告)日：2020-06-25

申请号：PCT/US2019/067352

申请日：2019-12-19

Applicant: APPLIED MATERIALS, INC.

Inventor： DU, Chao ,  SONI, Vaibhav ,  LIN, Talung ,  CAO, Yong ,  LI, Mingdong ,  LIU, Mingte ,  GONG, Chen ,  WANG, Xiaodong ,  WANG, Rongjun ,  TANG, Xianmin

IPC: H01L21/02

Abstract: Methods and apparatus for reducing arcing of a silicon oxide layer in a film stack are provided. In some embodiments a method for reducing arcing of a silicon oxide layer in a film stack includes: depositing a silicon oxide layer having a top surface atop a low-k dielectric layer, wherein the silicon oxide layer and low-k dielectric layer are disposed upon a substrate and within a film stack; contacting the silicon oxide layer with argon plasma in an amount sufficient to clean the silicon oxide layer; and depositing a nitride layer atop the silicon oxide layer.