公开(公告)号：WO2020251716A1

公开(公告)日：2020-12-17

申请号：PCT/US2020/032612

申请日：2020-05-13

Applicant: APPLIED MATERIALS, INC.

Inventor： ALLEN, Adolph M. ,  FAUNE, Vanessa ,  HUA, Zhong Qiang ,  SAVANDAIAH, Kirankumar Neelasandra ,  SUBRAMANI, Anantha K. ,  KRAUS, Philip A. ,  GUNG, Tza-Jing ,  ZHOU, Lei ,  CHONG, Halbert ,  SONI, Vaibhav ,  KALATHIPARAMBIL, Kishor

IPC: C23C14/56 ,  C23C14/34 ,  C23C14/50 ,  H01J37/34

Abstract: Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments a process kit configured for use in a process chamber for processing a substrate includes a shield having a cylindrical body having an upper portion and a lower portion; an adapter section configured to be supported on walls of the process chamber and having a resting surface to support the shield; and a heater coupled to the adapter section and configured to be electrically coupled to at least one power source of the processes chamber to heat the shield.

公开(公告)号：WO2020167744A1

公开(公告)日：2020-08-20

申请号：PCT/US2020/017633

申请日：2020-02-11

Applicant: APPLIED MATERIALS, INC.

Inventor： CHONG, Halbert ,  ZHOU, Lei ,  ALLEN, Adolph Miller ,  SONI, Vaibhav ,  KALATHIPARAMBIL, Kishor ,  FAUNE, Vanessa ,  SUH, Song-Moon

IPC: C23C14/02 ,  C23C14/56 ,  C23C14/22 ,  C23C14/35

Abstract: Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.

公开(公告)号：WO2020132175A1

公开(公告)日：2020-06-25

申请号：PCT/US2019/067352

申请日：2019-12-19

Applicant: APPLIED MATERIALS, INC.

Inventor： DU, Chao ,  SONI, Vaibhav ,  LIN, Talung ,  CAO, Yong ,  LI, Mingdong ,  LIU, Mingte ,  GONG, Chen ,  WANG, Xiaodong ,  WANG, Rongjun ,  TANG, Xianmin

IPC: H01L21/02

Abstract: Methods and apparatus for reducing arcing of a silicon oxide layer in a film stack are provided. In some embodiments a method for reducing arcing of a silicon oxide layer in a film stack includes: depositing a silicon oxide layer having a top surface atop a low-k dielectric layer, wherein the silicon oxide layer and low-k dielectric layer are disposed upon a substrate and within a film stack; contacting the silicon oxide layer with argon plasma in an amount sufficient to clean the silicon oxide layer; and depositing a nitride layer atop the silicon oxide layer.

公开(公告)号：WO2019089190A1

公开(公告)日：2019-05-09

申请号：PCT/US2018/054918

申请日：2018-10-09

Applicant: APPLIED MATERIALS, INC.

Inventor： BABAYAN, Viachslav ,  ALLEN, Adolph Miller ,  CITLA, Bhargav ,  DEDORE, Ronald D. ,  FAUNE, Vanessa ,  HUA, Zhong Qiang ,  SONI, Vaibhav ,  WU, Menglu

IPC: H01L21/02 ,  H05H1/46 ,  H01L21/67 ,  C23C16/455 ,  H01L21/28

Abstract: An apparatus and method of forming a dielectric film layer using a physical vapor deposition process include delivering a sputter gas to a substrate positioned in a processing region of a process chamber, the process chamber having a dielectric-containing sputter target, delivering an energy pulse to the sputter gas to create a sputtering plasma, the sputtering plasma being formed by energy pulses having an average voltage between about 800 volts and about 2000 volts and an average current between about 50 amps and about 300 amps at a frequency which is less than 50 kHz and greater than 5 kHz and directing the sputtering plasma toward the dielectric-containing sputter target to form an ionized species comprising dielectric material sputtered from the dielectric-containing sputter target, the ionized species forming a dielectric-containing film on the substrate.