公开(公告)号：WO2022125382A1

公开(公告)日：2022-06-16

申请号：PCT/US2021/061718

申请日：2021-12-03

Applicant: APPLIED MATERIALS, INC. [US]/[US]

Inventor： WHITE, Carl ,  VERGHESE, Mohith ,  MARQUARDT, David ,  ROMERO, Jose Alexandro

IPC: C23C16/448

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The ampoules comprise an inlet plenum located between the inlet port and the cavity and an outlet plenum located between the outlet port and the cavity. A flow path is defined by a plurality of tubular walls and an ingress openings of the ampoule, through which a carrier gas flows in contact with the precursor.

公开(公告)号：WO2022235738A1

公开(公告)日：2022-11-10

申请号：PCT/US2022/027590

申请日：2022-05-04

Applicant: APPLIED MATERIALS, INC.

Inventor： YANG, Yong ,  BHATNAGAR, Kunal ,  GANDIKOTA, Srinivas ,  GANGULI, Seshadri ,  ROMERO, Jose Alexandro ,  SRIRAM, Mandyam ,  VERGHESE, Mohith ,  WRENCH, Jacqueline S. ,  YANG, Yixiong

IPC: H01L27/108 ,  H01L21/285

Abstract: Methods of forming memory devices are described. A molybdenum silicide nucleation layer is formed, and the substrate is soaked in a titanium precursor prior to a bulk molybdenum gap fill process. In other embodiments, a molybdenum silicide film is formed in a first process cycle and a second process cycle is performed where the substrate is exposed to a titanium precursor. In further embodiments, a substrate having at least one feature thereon is exposed to a first titanium precursor and a nitrogen-containing reactant. The substrate is then soaked in a second titanium precursor, and then is exposed to a first molybdenum precursor followed by exposure to a silane to form a molybdenum silicide layer on a surface of the substrate.