公开(公告)号：WO2022125382A1

公开(公告)日：2022-06-16

申请号：PCT/US2021/061718

申请日：2021-12-03

Applicant: APPLIED MATERIALS, INC. [US]/[US]

Inventor： WHITE, Carl ,  VERGHESE, Mohith ,  MARQUARDT, David ,  ROMERO, Jose Alexandro

IPC: C23C16/448

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The ampoules comprise an inlet plenum located between the inlet port and the cavity and an outlet plenum located between the outlet port and the cavity. A flow path is defined by a plurality of tubular walls and an ingress openings of the ampoule, through which a carrier gas flows in contact with the precursor.

公开(公告)号：WO2022271778A1

公开(公告)日：2022-12-29

申请号：PCT/US2022/034451

申请日：2022-06-22

Applicant: APPLIED MATERIALS, INC.

Inventor： WHITE, Carl ,  MARQUARDT, David ,  VERGHESE, Mohith

IPC: C23C16/448 ,  C23C16/44 ,  C23C16/4481

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port an outlet port, a manifold having a serpentine base creating a tortuous flow path and a filter media assembly in a bottom-fed configuration. The torturous flow path is defined by a plurality of elongate walls and a plurality of openings of the serpentine base ampoule, through which a carrier gas flows in contact with the precursor.

公开(公告)号：WO2022235738A1

公开(公告)日：2022-11-10

申请号：PCT/US2022/027590

申请日：2022-05-04

Applicant: APPLIED MATERIALS, INC.

Inventor： YANG, Yong ,  BHATNAGAR, Kunal ,  GANDIKOTA, Srinivas ,  GANGULI, Seshadri ,  ROMERO, Jose Alexandro ,  SRIRAM, Mandyam ,  VERGHESE, Mohith ,  WRENCH, Jacqueline S. ,  YANG, Yixiong

IPC: H01L27/108 ,  H01L21/285

Abstract: Methods of forming memory devices are described. A molybdenum silicide nucleation layer is formed, and the substrate is soaked in a titanium precursor prior to a bulk molybdenum gap fill process. In other embodiments, a molybdenum silicide film is formed in a first process cycle and a second process cycle is performed where the substrate is exposed to a titanium precursor. In further embodiments, a substrate having at least one feature thereon is exposed to a first titanium precursor and a nitrogen-containing reactant. The substrate is then soaked in a second titanium precursor, and then is exposed to a first molybdenum precursor followed by exposure to a silane to form a molybdenum silicide layer on a surface of the substrate.

公开(公告)号：WO2023278721A1

公开(公告)日：2023-01-05

申请号：PCT/US2022/035758

申请日：2022-06-30

Applicant: APPLIED MATERIALS, INC.

Inventor： MARQUARDT, David ,  WHITE, Carl ,  VERGHESE, Mohith

IPC: C23C16/448 ,  C23C16/44 ,  C23C16/4402 ,  C23C16/4481

Abstract: Bottom-fed ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules comprise an outer cylindrical wall and an inner cylindrical wall defining a flow channel in between and a bottom wall having a top surface with a plurality of concentric elongate walls, each wall comprising an opening offset from the opening in adjacent walls defining a gas exchange zone through which a carrier gas flows in contact with the precursor.

公开(公告)号：WO2022256410A1

公开(公告)日：2022-12-08

申请号：PCT/US2022/031774

申请日：2022-06-01

Applicant: APPLIED MATERIALS, INC.

Inventor： BHATNAGAR, Kunal ,  VERGHESE, Mohith

IPC: C23C16/455 ,  C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  C23C16/40 ,  C23C16/32 ,  H01L21/285 ,  H01L21/02

Abstract: A deposition method demonstrating a slower growth rate is disclosed. Some embodiments of the disclosure provide CVD methods which utilize a halide-containing growth inhibitor as a co-reactant with a metal halide precursor and a reactant. Some embodiments of the disclosure relate to CVD and ALD methods comprising exposure of the substrate surface to a pretreatment comprising a halide-containing growth inhibitor.

公开(公告)号：WO2021222721A1

公开(公告)日：2021-11-04

申请号：PCT/US2021/030122

申请日：2021-04-30

Applicant: APPLIED MATERIALS, INC.

Inventor： WINKLER, Jereld ,  VERGHESE, Mohith

IPC: C23C16/448 ,  C23C16/455 ,  C23C16/52 ,  G01N29/02

Abstract: Describe is a quartz crystal microbalance (QCM) device mounted within a heated sample chamber. The sample chamber temperature is maintained about 10°C to about 30°C greater than the temperature of the precursor vessel. The sample chamber is connected to the precursor delivery line and includes a high temperature valve and a flow pathway to foreline with a high temperature valve to permit removal of excess material. The QCM device includes a heater and gas cooling channel allowing the device to be maintained at a temperature about 10°C to about 30°C less than the temperature of the precursor vessel.