Abstract:
The present invention generally relates to a refurbished electrostatic chuck and a method of refurbishing a used electrostatic chuck. Initially, a predetermined amount of dielectric material is removed from the used electrostatic chuck to leave a base surface. Then, the base surface is roughened to enhance the adherence of new dielectric material thereto. The new dielectric material is then sprayed onto the roughened surface. A mask is then placed over the new dielectric material to aid in the formation of mesas upon which a substrate will sit during processing. A portion of the new dielectric layer is then removed to form new mesas. After removing the mask, edges of the mesas may be smoothed and the refurbished electrostatic chuck is ready to return to service after cleaning.
Abstract:
Embodiments of showerheads are provided herein. In some embodiments, a showerhead assembly includes a chill plate comprising a gas plate and a cooling plate having an aluminum-silicon foil interlayer disposed therebetween for diffusion bonding the gas plate to the cooling plate and a heater plate comprising a first plate, a second plate, and a third plate, wherein an aluminum-silicon foil interlayer is disposed between the first plate and the cooling plate for diffusion bonding the first plate to the cooling plate, wherein an aluminum-silicon foil interlayer is disposed between the first plate and the second plate for diffusion bonding the first plate to the second plate, and wherein an aluminum-silicon foil interlayer is disposed between the second plate and the third plate for diffusion bonding the second plate to the third plate.
Abstract:
Slit valve gates and methods for cleaning are provided. Slit valves include: a slit valve gate configured to seal an opening of a process chamber, the slit valve gate comprising a surface that faces a processing volume of the process chamber; and a non-porous anodized coating on the surface of the slit valve gate. Methods of cleaning include: immersing the slit valve gate in a tank comprising deionized water; sonicating the slit valve gate at a first power density of about 6 W/cm 2 to about 15 W/cm 2 and a frequency of about 25 kHz to about 40 kHz for a first period of time; sonicating the slit valve gate at a second power density of about 30 W/cm 2 to about 45 W/cm 2 and a frequency of about 25 kHz to about 40 kHz for a second period of time; and removing the slit valve gate from the tank.
Abstract translation:
提供了狭缝阀门和清洁方法。 狭缝阀包括:构造成密封处理室的开口的狭缝阀门,狭缝阀门包括面向处理室的处理容积的表面; 和在狭缝阀门表面上的无孔阳极氧化涂层。 清洁方法包括:将狭缝阀门浸入包含去离子水的槽中; 以约6W / cm 2到约15W / cm 2的第一功率密度和约25kHz到约40kHz的频率对狭缝阀门进行超声处理, 第一段时间; 以约30W / cm 2到约45W / cm 2的第二功率密度对狭缝阀门进行超声处理,对于约25kHz到约40kHz的频率 第二段时间; 并从槽中取出狭缝阀门。 p>
Abstract:
A processing chamber component and method for fabricating the same are provided. The processing chamber component is fabricated in the manner described herein and includes the creation of at least a macro texture on a surface of the chamber component. The macro texture is defined by a plurality of engineered features arranged in a predefined orientation on the surface of the chamber component. In some embodiments, the engineered features prevent formation of a line of sight surface defined between the features to enhance retention of films deposited on the chamber component.
Abstract:
A showerhead assembly, and method of forming thereof is provided. The apparatus, for example, includes a gas distribution plate comprising an inner portion and an outer portion, the inner portion made from single crystal silicon (Si) and the outer portion made from one of single crystal Si or polysilicon (poly-Si), wherein a bonding layer is provided on a back surface of at least one of the inner portion or outer portion; a backing plate formed from silicon (Si) and silicon carbide (SiC) as a major component thereof, wherein the backing plate is bonded to at least one of the back surface of at least one of the inner portion or outer portion of the gas distribution plate.
Abstract:
Described herein are RF components with a modified surface material to improve chemical resistance and decrease metal contamination within processing chambers. Also disclosed herein are methods of manufacturing and using the same. Some embodiments of the disclosure comprise a base material with a Young's modulus greater than or equal to 75 GPa. Some embodiments of the disclosure have a modified surface material comprising one or more of aluminum, lanathanum and magnesium.
Abstract:
Embodiments of a method of forming one or more holes in a substrate for use as a process chamber component are provided herein. In some embodiments, a method of forming one or more holes in a substrate for use as a process chamber component include forming the one or more holes in the substrate with one or more laser drills using at least one of a percussion drilling, a trepanning, or an ablation process, wherein each of the one or more holes have an aspect ratio of about 1:1 to about 50:1, and wherein the substrate is a component for gas delivery or fluid delivery.
Abstract:
A processing chamber component and method for fabricating the same are provided. The processing chamber component is fabricated in the manner described herein and includes the creation of at least a macro texture on a surface of the chamber component. The macro texture is defined by a plurality of engineered features arranged in a predefined orientation on the surface of the chamber component. In some embodiments, the engineered features prevent formation of a line of sight surface defined between the features to enhance retention of films deposited on the chamber component.