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公开(公告)号：WO2019217014A1
公开(公告)日：2019-11-14
申请号：PCT/US2019/026079
申请日：2019-04-05
Applicant: APPLIED MATERIALS, INC.
Inventor： XUE, Lin , CHING, Chi Hong , WANG, Rongjun , PAKALA, Mahendra
Abstract: Embodiments of magnetic tunnel junction (MTJ) structures discussed herein employ seed layers of one or more layer of chromium (Cr), NiCr, NiFeCr, RuCr, IrCr, or CoCr, or combinations thereof. These seed layers are used in combination with one or more pinning layers, a first pinning layer in contact with the seed layer can contain a single layer of cobalt, or can contain cobalt in combination with bilayers of cobalt and platinum (Pt), iridium (Ir), nickel (Ni), or palladium (Pd), The second pinning layer can be the same composition and configuration as the first, or can be of a different composition or configuration. The MTJ stacks discussed herein maintain desirable magnetic properties subsequent to high temperature annealing.
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公开(公告)号：WO2019190652A1
公开(公告)日：2019-10-03
申请号：PCT/US2019/018457
申请日：2019-02-19
Applicant: APPLIED MATERIALS, INC.
Inventor： XUE, Lin , CHING, Chi Hong , WANG, Xiaodong , PAKALA, Mahendra , WANG, Rongjun
Abstract: Embodiments of the disclosure provide methods for forming MTJ structures from a film stack disposed on a substrate for MRAM applications and associated MTJ devices. The methods described herein include forming the film properties of material layers from the film stack to create a film stack with a sufficiently high perpendicular magnetic anisotropy (PMA). An iron containing oxide capping layer is utilized to generate the desirable PMA. By utilizing an iron containing oxide capping layer, thickness of the capping layer can be more finely controlled and reliance on boron at the interface of the magnetic storage layer and the capping layer is reduced.
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公开(公告)号：WO2016195946A1
公开(公告)日：2016-12-08
申请号：PCT/US2016/031941
申请日：2016-05-11
Applicant: APPLIED MATERIALS, INC.
Inventor： XUE, Lin , PAKALA, Mahendra , CHEN, Ha , AHN, Jaesoo
CPC classification number: H01L43/12
Abstract: Device structures and methods for fabricating device structures are provided herein. Magnetic random access memory (MRAM) devices described herein may include a film stack comprising a magnetic tunneling junction layer, a dielectric capping layer, an etch stop layer, a conductive hard mask layer, a dielectric hard mask layer, a spin on carbon layer, and an anti-reflective coating layer. The film stack may be etched by one or more selected chemistries to achieve improved film stack sidewall verticality. Memory cells having increasingly uniform and reduced critical dimensions may be fabricated utilizing the methods and devices described herein.
Abstract translation: 本文提供了用于制造器件结构的器件结构和方法。 本文描述的磁性随机存取存储器（MRAM）器件可以包括膜堆叠，其包括磁性隧道结层，介电覆盖层，蚀刻停止层，导电硬掩模层，电介质硬掩模层，自旋碳层， 和抗反射涂层。 可以通过一个或多个选择的化学物质来蚀刻膜堆叠，以实现改进的膜叠层侧壁垂直度。 可以使用本文所述的方法和装置来制造具有越来越均匀和降低的临界尺寸的存储器单元。
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公开(公告)号：WO2020106378A1
公开(公告)日：2020-05-28
申请号：PCT/US2019/055886
申请日：2019-10-11
Applicant: APPLIED MATERIALS, INC.
Inventor： AHN, Jaesoo , PARK, Chando , TSENG, Hsin-Wei , XUE, Lin , PAKALA, Mahendra
Abstract: Disclosed herein is an improved SOT-MRAM device and method of manufacture thereof. A memory device includes a first structure that includes a magnetic tunnel junction stack and a spin-orbit torque layer. The spin-orbit torque layer is formed on the magnetic tunnel junction stack. A dielectric capping layer is formed over the spin-orbit torque layer. A metal layer is formed on top of the first structure. The metal layer surrounds each of the spin-orbit torque layer and the dielectric capping layer. The metal layer is in direct contact with a sidewall of the spin-orbit torque layer.
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公开(公告)号：WO2020068327A1
公开(公告)日：2020-04-02
申请号：PCT/US2019/048134
申请日：2019-08-26
Applicant: APPLIED MATERIALS, INC.
Inventor： XUE, Lin , AHN, Jaesoo , TSENG, Hsin-wei , PAKALA, Mahendra
Abstract: Embodiments of the disclosure relate to methods for fabricating structures used in memory devices. More specifically, embodiments of the disclosure relate to methods for fabricating MTJ structures in memory devices. In one embodiment, the method includes forming a MTJ structure, depositing a encapsulating layer on a top and sides of the MTJ structure, depositing a dielectric material on the encapsulating layer, removing the dielectric material and the encapsulating layer disposed on the top of the MTJ structure by a chemical mechanical planarization (CMP) process to expose the top of the MTJ structure, and depositing a contact layer on the MTJ structure. The method utilizes a CMP process to expose the top of the MTJ structure instead of an etching process, which avoids damaging the MTJ structure and leads to improved electrical contact between the MTJ structure and the contact layer.
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Patent Agency Ranking
公开(公告)号：WO2019018051A1
公开(公告)日：2019-01-24
申请号：PCT/US2018/033262
申请日：2018-05-17
Applicant: APPLIED MATERIALS, INC.
Inventor： XUE, Lin , CHING, Chi Hong , AHN, Jaesoo , PAKALA, Mahendra , WANG, Rongjun
Abstract: Embodiments herein provide film stacks utilized to form a magnetic tunnel junction (MTJ) structure on a substrate, comprising: a buffer layer; a seed layer disposed over the buffer layer; a first pinning layer disposed over the seed layer; a synthetic ferrimagnet (SyF) coupling layer disposed over the first pinning layer; a second pinning layer disposed over the SyF coupling layer; a structure blocking layer disposed over the second pinning layer; a magnetic reference layer disposed over the structure blocking layer; a tunnel barrier layer disposed over the magnetic reference layer; a magnetic storage layer disposed over the tunnel barrier layer; a capping layer disposed over the magnetic storage layer, wherein the capping layer comprises one or more layers; and a hard mask disposed over the capping layer, wherein at least one of the capping layer, the buffer layer, and the SyF coupling layer is not fabricated from Ru.
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公开(公告)号：WO2021150286A1
公开(公告)日：2021-07-29
申请号：PCT/US2020/057973
申请日：2020-10-29
Applicant: APPLIED MATERIALS, INC.
Inventor： KIM, Jong Mun , LING, Mang-Mang , ASRANI, Soham , XUE, Lin , YING, Chentsau Chris , NEMANI, Srinivas D. , YIEH, Ellie Y.
Abstract: A method of etching a layer stack. The method may include providing a substrate in a process chamber, the substrate comprising an array of patterned features, arranged within a layer stack, the layer stack including at least one metal layer, and directing an ion beam to the substrate from an ion source, wherein the ion beam causes a physical sputtering of the at least one metal layer. The method may include directing a neutral reactive gas directly to the substrate, separately from the ion source, wherein the neutral reactive gas reacts with metallic species generated by the physical sputtering of the at least one metal layer.
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公开(公告)号：WO2020167405A1
公开(公告)日：2020-08-20
申请号：PCT/US2020/013791
申请日：2020-01-16
Applicant: APPLIED MATERIALS, INC.
Inventor： XUE, Lin , PARK, Chando , AHN, Jaesoo , TSENG, Hsin-wei , PAKALA, Mahendra
Abstract: Implementations of the present disclosure generally relate to a memory device. More specifically, implementations described herein generally relate to a SOT-MRAM. The SOT-MRAM includes a memory cell having a magnetic storage layer disposed side by side and in contact with a SOT layer. The side by side magnetic storage layer and the SOT layer can achieve the switching of the magnetic storage layer by reversing the direction of the electrical current flowing through the SOT layer without any additional conditions.
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公开(公告)号：WO2020131206A1
公开(公告)日：2020-06-25
申请号：PCT/US2019/057031
申请日：2019-10-18
Applicant: APPLIED MATERIALS, INC.
Inventor： AHN, Jaesoo , TSENG, Hsin-Wei , XUE, Lin , PAKALA, Mahendra
Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications, particularly for spin-orbit-torque magnetic random access memory (SOT MRAM) applications. In one embodiment, a magnetic tunnel junction (MTJ) device structure includes a magnetic tunnel junction (MTJ) pillar structure disposed on a substrate, and a gap surrounding the MTJ pillar structure. In yet another embodiment, a magnetic tunnel junction (MTJ) device structure includes a spacer layer surrounding a patterned reference layer and a tunneling barrier layer disposed on a patterned free layer, and a gap surrounding the patterned free layer.
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公开(公告)号：WO2020013930A1
公开(公告)日：2020-01-16
申请号：PCT/US2019/035457
申请日：2019-06-04
Applicant: APPLIED MATERIALS, INC.
Inventor： XUE, Lin , CHING, Chi Hong , WANG, Xiaodong , WANG, Rongjun , PAKALA, Mahendra
Abstract: Embodiments of the present disclosure are for systems and methods for fabrication of a magnetic tunnel junction stack. This fabrication can occur via methods including one or more of (1) heating the substrate after the deposition of a buffer layer on the substrate, prior to deposition of a seed layer; (2) cooling the substrate after the deposition of a second pinning layer, before deposition of a structure blocking layer; (3) heating the substrate during the deposition of a tunnel barrier layer and then cooling it after the deposition of the tunnel barrier layer is complete; (4) heating the substrate after the deposition of a magnetic storage layer on the tunnel barrier layer; and (5) cooling the substrate after the deposition of the magnetic storage layer before a first interlayer of the capping layer is deposited.
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