公开(公告)号：WO2021071586A1

公开(公告)日：2021-04-15

申请号：PCT/US2020/046601

申请日：2020-08-17

Applicant: APPLIED MATERIALS, INC.

Inventor： LIANG, Qiwei ,  NEMANI, Srinivas D. ,  YIEH, Ellie ,  BUCHBERGER, Douglas ,  YING, Chentsau Chris

IPC: H01J37/305 ,  H01J37/08 ,  H01J37/20 ,  H01L21/67

Abstract: Apparatus for a multi-source ion beam etching (IBE) system are provided herein. In some embodiments, a multi-source IBE system includes a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor, a plurality of IBE sources coupled to the multi-source adaptor, a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body, and at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages the bottom portion of the IBE sources on the opposite end of the beam conduit.

公开(公告)号：WO2021096657A1

公开(公告)日：2021-05-20

申请号：PCT/US2020/056989

申请日：2020-10-23

Applicant: APPLIED MATERIALS, INC.

Inventor： KIM, Jong Mun ,  YU, Minrui ,  PARK, Chando ,  LING, Mang-Mang ,  AHN, Jaesoo ,  YING, Chentsau Chris ,  NEMANI, Srinivas D. ,  PAKALA, Mahendra ,  YIEH, Ellie Y.

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10

Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a method for forming a magnetic tunnel junction (MTJ) device structure includes performing a patterning process by an ion beam etching process in a processing chamber to pattern a film stack disposed on a substrate, wherein the film stack comprises a reference layer, a tunneling barrier layer and a free layer disposed on the tunneling barrier, and determining an end point for the patterning process.

公开(公告)号：WO2021041832A1

公开(公告)日：2021-03-04

申请号：PCT/US2020/048438

申请日：2020-08-28

Applicant: APPLIED MATERIALS, INC.

Inventor： REN, He ,  YOU, Shi ,  JIANG, Hao ,  HUNG, Raymond ,  NAIK, Mehul ,  YING, Chentsau Chris ,  LING, Mang-Mang ,  DONG, Lin

IPC: H01L21/02 ,  H01L21/67

Abstract: Methods and apparatus for cleaning a contaminated metal surface on a substrate, including: exposing a substrate including a dielectric surface and a metal surface including metal nitride residues and metal carbide residues to a process gas including an oxidizing agent to form a substrate including a dielectric surface and a metal surface including metal oxides residues; and exposing a substrate including a dielectric surface and a metal surface including metal oxides residues to a process gas including a reducing agent to form a substrate including a dielectric surface and a substantially pure metal surface.

公开(公告)号：WO2021231067A1

公开(公告)日：2021-11-18

申请号：PCT/US2021/029017

申请日：2021-04-24

Applicant: APPLIED MATERIALS, INC.

Inventor： YUI, Minrui ,  WANG, Wenhui ,  AHN, Jaesoo ,  KIM, Jong Mun ,  PATEL, Sahil ,  XUE, Lin ,  PARK, Chando ,  PAKALA, Mahendra ,  YING, Chentsau Chris ,  DAI, Huixiong ,  NGAI, Christopher S.

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/12 ,  G11C11/16 ,  G01R33/095 ,  G01R33/098 ,  G11C11/161 ,  H01L27/222 ,  H01L43/04 ,  H01L43/10 ,  H01L43/14

Abstract: Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random -access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.

公开(公告)号：WO2021127123A1

公开(公告)日：2021-06-24

申请号：PCT/US2020/065521

申请日：2020-12-17

Applicant: APPLIED MATERIALS, INC.

Inventor： SHEK, Mei-Yee ,  CITLA, Bhargav S. ,  RUBNITZ, Joshua ,  TANNOS, Jethro ,  YING, Chentsau Chris ,  NEMANI, Srinivas D. ,  YIEH, Ellie Y.

IPC: C23C16/36 ,  C23C16/04 ,  C23C16/505 ,  C01B21/0828 ,  C09D1/00 ,  C23C16/4408 ,  C23C16/50

Abstract: Methods for plasma enhanced chemical vapor deposition (PECVD) of silicon carbonitride films are described. A flowable silicon carbonitride film is formed on a substrate surface by exposing the substrate surface to a precursor and a reactant, the precursor having a structure of general formula (I) or general formula (II) wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor, and then exposing the substrate to an ammonia plasma.

公开(公告)号：WO2021150286A1

公开(公告)日：2021-07-29

申请号：PCT/US2020/057973

申请日：2020-10-29

Applicant: APPLIED MATERIALS, INC.

Inventor： KIM, Jong Mun ,  LING, Mang-Mang ,  ASRANI, Soham ,  XUE, Lin ,  YING, Chentsau Chris ,  NEMANI, Srinivas D. ,  YIEH, Ellie Y.

IPC: H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A method of etching a layer stack. The method may include providing a substrate in a process chamber, the substrate comprising an array of patterned features, arranged within a layer stack, the layer stack including at least one metal layer, and directing an ion beam to the substrate from an ion source, wherein the ion beam causes a physical sputtering of the at least one metal layer. The method may include directing a neutral reactive gas directly to the substrate, separately from the ion source, wherein the neutral reactive gas reacts with metallic species generated by the physical sputtering of the at least one metal layer.

公开(公告)号：WO2021145992A1

公开(公告)日：2021-07-22

申请号：PCT/US2020/064768

申请日：2020-12-14

Applicant: APPLIED MATERIALS, INC.

Inventor： LIANG, Qiwei ,  NEMANI, Srinivas D. ,  YING, Chentsau Chris ,  YIEH, Ellie Y. ,  CHEN, Erica ,  ALEX, Nithin Thomas

IPC: C23C16/505 ,  C23C16/458 ,  C23C16/46 ,  C23C16/26 ,  C23C16/513 ,  H01J2237/3321 ,  H01J37/321 ,  H01L21/0228

Abstract: A method and apparatus for depositing a carbon compound on a substrate includes using an inductively coupled plasma (ICP) chamber with a chamber body, a lid, an interior volume, a pumping apparatus, and a gas delivery system and a pedestal for supporting a substrate disposed within the interior volume of the ICP chamber, the pedestal has an upper portion formed from aluminum nitride with an upper surface that is configured to support and heat a substrate with embedded heating elements and a lower portion with a tube-like structure formed from aluminum nitride that is configured to support the upper portion and house electrodes for supplying power to the embedded heating elements of the upper portion, and the pedestal is configured to heat the substrate during deposition of a carbon compound film.

公开(公告)号：WO2020086582A1

公开(公告)日：2020-04-30

申请号：PCT/US2019/057440

申请日：2019-10-22

Applicant: APPLIED MATERIALS, INC.

Inventor： KIM, Jong Mun ,  YING, Chentsau Chris ,  REN, He ,  NEMANI, Srinivas D. ,  YIEH, Ellie

IPC: H01L21/3213 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/28 ,  H01L21/67

Abstract: Methods and apparatus for processing a substrate and etching a nickel silicide layer are provided herein. In some embodiments, a method of etching a nickel silicide film in a semiconductor device include: contacting a nickel silicide film disposed on a substrate in a process chamber with an etching gas sufficient to form one or more soluble or volatile products in order to reduce or eliminate re-deposition of products formed from the nickel silicide film upon the nickel silicide film.