Abstract:
A semiconductor laser diode with integrated heating generally includes a lasing region and a heating region integrated into the same semiconductor structure or chip. The lasing region and the heating region include first and second portions, respectively, of the semiconductor layers forming the semiconductor structure and include first and second portions, respectively, of the active regions formed by the semiconductor layers. Separate laser and heater electrodes are electrically connected to the respective lasing and heating regions for driving the respective lasing and heating regions with drive currents. The heating region may thus be driven independently from the lasing region, and heat may be conducted through the semiconductor layers from the heating region to the lasing region allowing the temperature to be controlled more efficiently.
Abstract:
In a laser package, a tilted laser causes laser light to be coupled into an optical fiber at an angle relative to a fiber axis of the optical fiber. The tilted laser emits laser light at an angle relative to a lens axis of a lens such that the lens directs and focuses the laser light at the angle relative to the fiber axis. Tilting the laser allows the laser light to be coupled into the optical fiber substantially parallel to or aligned with the core of the fiber while causing back reflection to be directed away from the laser, thereby improving coupling efficiency and minimizing feedback. The tilted laser may be coupled to an angle polished fiber, for example, in a laser package such as a TO can type laser package, a butterfly type laser package, or a TOSA type laser package.