公开(公告)号：WO2022033793A1

公开(公告)日：2022-02-17

申请号：PCT/EP2021/069613

申请日：2021-07-14

Applicant: ASML NETHERLANDS B.V.

Inventor： COLLIGNON, Tijmen, Pieter ,  SMAL, Pavel ,  TABERY, Cyrus, Emil ,  DOS SANTOS GUZELLA, Thiago ,  BASTANI, Vahid

IPC: G03F7/20 ,  G03F9/00

Abstract: Methods and associated apparatus for identifying contamination in a semiconductor fab are disclosed. The methods comprise determining contamination map data for a plurality of semiconductor wafers clamped to a wafer table after being processed in the semiconductor fab. Combined contamination map data is determined based, at least in part, on a combination of the contamination map data of the plurality of semiconductor wafers. The combined contamination map data is combined to reference data. The reference data comprises one or more values for the combined contamination map data that are indicative of contamination in one or more tools in the semiconductor fab.

公开(公告)号：WO2021213746A1

公开(公告)日：2021-10-28

申请号：PCT/EP2021/057211

申请日：2021-03-22

Applicant: ASML NETHERLANDS B.V.

Inventor： SAHRAEIAN, Reza ,  BASTANI, Vahid ,  GKOROU, Dimitra ,  DOS SANTOS GUZELLA, Thiago

IPC: G03F7/20 ,  G06N5/04

Abstract: Apparatus and methods of configuring an imputer model for imputing a second parameter. The method comprises inputting a first data set comprising values of a first parameter to the imputer model, and evaluating the imputer model to obtain a second data set comprising imputed values of the second parameter. The method further comprises obtaining a third data set comprising measured values of a third parameter, wherein the third parameter is correlated to the second parameter; obtaining a prediction model configured to infer values of the third parameter based on inputting values of the second parameter; inputting the second data set to the prediction model, and evaluating the prediction model to obtain inferred values of the third parameter; and configuring the imputer model based on a comparison of the inferred values and the measured values of the third parameter.

公开(公告)号：WO2022179773A1

公开(公告)日：2022-09-01

申请号：PCT/EP2022/051299

申请日：2022-01-21

Applicant: ASML NETHERLANDS B.V.

Inventor： DOS SANTOS GUZELLA, Thiago ,  ISHIBASHI, Masashi ,  SANNO, Noriaki ,  BASTANI, Vahid ,  SAHRAEIAN, Reza ,  SAPUTRA, Putra

IPC: G01N21/956 ,  G03F7/20 ,  G05B19/418 ,  G06N20/00 ,  H01L21/66

Abstract: Described is a method for determining a spatially varying process offset for a lithographic process, the spatially varying process offset (MTD) varying over a substrate subject to the lithographic process to form one or more structures thereon. The method comprises obtaining a trained model (MOD), having been trained to predict first metrology data based on second metrology data, wherein the first metrology data (OV) is spatially varying metrology data which relates to a first type of measurement of said structures being a measure of yield and said second metrology data (PB) is spatially varying metrology data which relates to a second type of measurement of said structures and correlates with said first metrology data; and using said model to obtain said spatially varying process offset (MTD).