公开(公告)号：WO2022128846A1

公开(公告)日：2022-06-23

申请号：PCT/EP2021/085372

申请日：2021-12-13

Applicant: ASML NETHERLANDS B.V.

Inventor： YE, Ning ,  JIANG, Jun ,  ZHANG, Jian ,  WANG, Yixiang

IPC: H01J37/22 ,  H01J37/26 ,  H01J37/28

Abstract: Apparatuses, systems, and methods for providing beams for controlling charges on a sample surface of charged particle beam system. In some embodiments, a module comprising a laser source configured to emit a beam. The beam may illuminate an area adjacent to a pixel on a wafer to indirectly heat the pixel to mitigate a cause of a direct photon-induced effect at the pixel. An electron beam tool configured to detect a defect in the pixel, wherein the defect is induced by the indirect heating of the pixel.

公开(公告)号：WO2021037944A1

公开(公告)日：2021-03-04

申请号：PCT/EP2020/073908

申请日：2020-08-26

Applicant: ASML NETHERLANDS B.V.

Inventor： JIANG, Jun ,  JEN, Chih-Yu ,  YE, Ning ,  ZHANG, Jian

IPC: H01J37/28 ,  G01R31/307

Abstract: A charged particle beam system may include a primary source (100), a secondary source (200), and a controller. The primary source may be configured to emit a charged particle beam (241) along an optical axis onto a region of a sample (201). The secondary source may be configured to irradiate (242) the region of the sample. The controller may be configured to control the charged particle beam system to change a parameter of an output of the secondary source. A method of imaging may include emitting a charged particle beam (241) onto a region of a sample (201), irradiating (242) the region of the sample with a secondary source (200), and changing a parameter of an output of the secondary source.

公开(公告)号：WO2020043583A1

公开(公告)日：2020-03-05

申请号：PCT/EP2019/072434

申请日：2019-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： JEN, Chih-Yu ,  MA, Long ,  WANG, Yongjun ,  JIANG, Jun

IPC: H01J37/22 ,  G01N23/2251 ,  H01J37/28 ,  H01L21/66

Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. The beam inspection apparatus includes a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence, and a controller configured to sample multiple images (510-538) of the area of the wafer at difference times over the time sequence. The multiple images are compared to detect a voltage contrast difference or changes (560-564) to identify a thin device structure defect (562).

公开(公告)号：WO2022023304A1

公开(公告)日：2022-02-03

申请号：PCT/EP2021/070930

申请日：2021-07-27

Applicant: ASML NETHERLANDS B.V.

Inventor： GAURY, Benoit, Herve ,  LA FONTAINE, Bruno ,  JIANG, Jun ,  HASAN, Shakeeb Bin ,  KANAI, Kenichi ,  VAN RENS, Jasper, Frans, Mathijs ,  TABERY, Cyrus, Emil ,  MA, Long ,  PATTERSON, Oliver, Desmond ,  ZHANG, Jian ,  JEN, Chih-Yu ,  WANG, Yixiang

IPC: H01J37/22 ,  H01J37/244

Abstract: Systems and methods of observing a sample using a charged-particle beam apparatus in voltage contrast mode are disclosed. The charged-particle beam apparatus comprises a charged- particle source, an optical source, a charged-particle detector configured to detect charged particles, and a controller having circuitry configured to apply a first signal to cause the optical source to generate the optical pulse, apply a second signal to the charged-particle detector to detect the second plurality of charged particles, and adjust a time delay between the first and the second signals. In some embodiments, the controller having circuitry may be further configured to acquire a plurality of images of a structure, to determine an electrical characteristic of the structure based on the rate of gray level variation of the plurality of images of the structure, and to simulate, using a model, a physical characteristic of the structure based on the determined electrical characteristic.