公开(公告)号：WO2017144343A1

公开(公告)日：2017-08-31

申请号：PCT/EP2017/053499

申请日：2017-02-16

Applicant: ASML NETHERLANDS B.V. ,  LAM RESEARCH CORPORATION

Inventor： KUBIS, Michael ,  JOCHEMSEN, Marinus ,  WISE, Richard, Stephen ,  SHAMMA, Nader ,  DIXIT, Girish, Anant ,  REIJNEN, Liesbeth ,  VIATKINA, Ekaterina, Mikhailovna ,  LUCA, Melisa ,  MULKENS, Johannes, Catharinus, Hubertus

IPC: G03F7/20

CPC classification number: G03F7/70525 ,  G03F7/70625

Abstract: A method, and associated apparatus and computer program, to determine corrections for a parameter of interest, such as critical dimension, of a patterning process. The method includes determining an exposure control correction for an exposure control parameter and, optionally, determining a process control correction for a process control parameter, based upon a measurement of the parameter of interest of a structure, and an exposure control relationship and a process control relationship. The exposure control relationship describes the dependence of the parameter of interest on the exposure control parameter and the process control relationship describes the dependence of the parameter of interest on the process control parameter. The exposure control correction and process control correction may be co-optimized to minimize variation of the parameter of interest of subsequent exposed and processed structures relative to a target parameter of interest.

Abstract translation: 用于确定图案化过程的感兴趣参数（例如临界尺寸）的校正的方法和相关装置以及计算机程序。 该方法包括基于结构的感兴趣参数的测量以及曝光控制关系和过程控制来确定曝光控制参数的曝光控制校正，以及可选地确定过程控制参数的过程控制校正 关系。 曝光控制关系描述了感兴趣的参数对曝光控制参数的依赖性，并且过程控制关系描述了感兴趣的参数对过程控制参数的依赖性。 曝光控制校正和过程控制校正可以被共同优化以最小化随后曝光和处理的结构相对于感兴趣的目标参数的感兴趣参数的变化。