公开(公告)号：WO2017144343A1

公开(公告)日：2017-08-31

申请号：PCT/EP2017/053499

申请日：2017-02-16

Applicant: ASML NETHERLANDS B.V. ,  LAM RESEARCH CORPORATION

Inventor： KUBIS, Michael ,  JOCHEMSEN, Marinus ,  WISE, Richard, Stephen ,  SHAMMA, Nader ,  DIXIT, Girish, Anant ,  REIJNEN, Liesbeth ,  VIATKINA, Ekaterina, Mikhailovna ,  LUCA, Melisa ,  MULKENS, Johannes, Catharinus, Hubertus

IPC: G03F7/20

CPC classification number: G03F7/70525 ,  G03F7/70625

Abstract: A method, and associated apparatus and computer program, to determine corrections for a parameter of interest, such as critical dimension, of a patterning process. The method includes determining an exposure control correction for an exposure control parameter and, optionally, determining a process control correction for a process control parameter, based upon a measurement of the parameter of interest of a structure, and an exposure control relationship and a process control relationship. The exposure control relationship describes the dependence of the parameter of interest on the exposure control parameter and the process control relationship describes the dependence of the parameter of interest on the process control parameter. The exposure control correction and process control correction may be co-optimized to minimize variation of the parameter of interest of subsequent exposed and processed structures relative to a target parameter of interest.

Abstract translation: 用于确定图案化过程的感兴趣参数（例如临界尺寸）的校正的方法和相关装置以及计算机程序。 该方法包括基于结构的感兴趣参数的测量以及曝光控制关系和过程控制来确定曝光控制参数的曝光控制校正，以及可选地确定过程控制参数的过程控制校正 关系。 曝光控制关系描述了感兴趣的参数对曝光控制参数的依赖性，并且过程控制关系描述了感兴趣的参数对过程控制参数的依赖性。 曝光控制校正和过程控制校正可以被共同优化以最小化随后曝光和处理的结构相对于感兴趣的目标参数的感兴趣参数的变化。

公开(公告)号：WO2017144379A1

公开(公告)日：2017-08-31

申请号：PCT/EP2017/053700

申请日：2017-02-17

Applicant: ASML NETHERLANDS B.V.

Inventor： TEL, Wim, Tjibbo ,  STAALS, Frank ,  MASLOW, Mark, John ,  ANUNCIADO, Roy ,  JOCHEMSEN, Marinus ,  CRAMER, Hugo, Augustinus, Joseph ,  THEEUWES, Thomas ,  HINNEN, Paul, Christiaan

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/705 ,  G03F7/70625

Abstract: A method including: computing a value of a first variable of a pattern of, or for, a substrate processed by a patterning process by combining a fingerprint of the first variable on the substrate and a certain value of the first variable; and determining a value of a second variable of the pattern based at least in part on the computed value of the first variable.

Abstract translation: 一种方法，包括：通过组合所述衬底上的所述第一变量的指纹和所述衬底的特定值来计算由图案化过程处理的衬底的图案的第一变量的值 第一个变量; 以及至少部分地基于所计算的第一变量的值来确定图案的第二变量的值。

公开(公告)号：WO2023072573A1

公开(公告)日：2023-05-04

申请号：PCT/EP2022/078149

申请日：2022-10-10

Applicant: ASML NETHERLANDS B.V.

Inventor： MAAS, Diederik, Jan ,  OP 'T ROOT, Wilhelmus, Patrick, Elisabeth, Maria ,  JOCHEMSEN, Marinus ,  CRAMER, Hugo, Augustinus, Joseph

IPC: G03F7/20

Abstract: Disclosed is metrology apparatus for measurement of a diffractive structure on a substrate, comprising: a radiation source operable to provide first radiation for excitation of the diffractive structure, said first radiation having a first wavelength; a detection arrangement operable to detect at least diffracted second radiation comprising a second harmonic of said first radiation, said diffracted second radiation being generated from said diffractive structure and/or substrate and diffracted by said diffractive structure; and a processing arrangement operable to determine a parameter of interest relating to said diffractive structure from at least said diffracted second radiation.

公开(公告)号：WO2018099690A1

公开(公告)日：2018-06-07

申请号：PCT/EP2017/078288

申请日：2017-11-06

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN HAREN, Richard, Johannes, Franciscus ,  CALADO, Victor, Emanuel ,  VAN DIJK, Leon, Paul ,  WERKMAN, Roy ,  MOS, Everhardus, Cornelis ,  WILDENBERG, Jochem, Sebastiaan ,  JOCHEMSEN, Marinus ,  RAJASEKHARAN, Bijoy ,  JENSEN, Erik ,  URBANCZYK, Adam, Jan

IPC: G03F7/20 ,  H01L21/30 ,  H01L21/67 ,  H01L21/66

Abstract: A method to change an etch parameter of a substrate etching process, the method comprising: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.

公开(公告)号：WO2018015181A1

公开(公告)日：2018-01-25

申请号：PCT/EP2017/067074

申请日：2017-07-07

Applicant: ASML NETHERLANDS B.V.

Inventor： JOCHEMSEN, Marinus ,  HUNSCHE, Stefan ,  TEL, Wim, Tjibbo

IPC: G03F7/20

Abstract: A method including determining a first color pattern and a second color pattern associated with a hot spot of a design layout pattern, the design layout pattern configured for transfer to a substrate, and predicting, by a hardware computer system, whether there would be a defect at the hot spot on the substrate caused by overlay error, based at least in part on a measurement of an overlay error between the first color pattern and the second color pattern.

Abstract translation: 一种方法，包括：确定与设计布局图案的热点相关联的第一颜色图案和第二颜色图案，所述设计布局图案被配置用于转移到衬底;以及通过硬件计算机 系统中，至少部分地基于第一颜色图案和第二颜色图案之间的重叠误差的测量值，在覆盖误差引起的衬底上的热点处是否存在缺陷。

公开(公告)号：WO2019063206A1

公开(公告)日：2019-04-04

申请号：PCT/EP2018/072605

申请日：2018-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： TEL, Wim, Tjibbo ,  MASLOW, Mark, John ,  VAN INGEN SCHENAU, Koenraad ,  WARNAAR, Patrick ,  SLACHTER, Abraham ,  ANUNCIADO, Roy ,  VAN GORP, Simon, Hendrik, Celine ,  STAALS, Frank ,  JOCHEMSEN, Marinus

IPC: G03F7/20

Abstract: Disclosed herein is a method for determining one or more control parameters of a manufacturing process comprising a lithographic process and one or more further processes, the method comprising: obtaining an image of at least part of a substrate, wherein the image comprises at least one feature manufactured on the substrate by the manufacturing process; calculating one or more image-related metrics in dependence on a contour determined from the image, wherein one of the image -related metrics is an edge placement error, EPE, of the at least one feature; and determining one or more control parameters of the lithographic process and/or said one or more further processes in dependence on the edge placement error, wherein at least one control parameter is determined so as to minimize the edge placement error of the at least one feature.

公开(公告)号：WO2019048147A1

公开(公告)日：2019-03-14

申请号：PCT/EP2018/071103

申请日：2018-08-03

Applicant: ASML NETHERLANDS B.V.

Inventor： DE WINTER, Laurentius, Cornelius ,  STOLK, Roland, Pieter ,  STAALS, Frank ,  VAN OOSTEN, Anton, Bernhard ,  HINNEN, Paul, Christiaan ,  JOCHEMSEN, Marinus ,  THEEUWES, Thomas ,  VAN SETTEN, Eelco

IPC: G03F7/20 ,  G03F1/24 ,  G21K1/06

Abstract: Disclosed is a method of measuring focus performance of a lithographic apparatus, and corresponding patterning device and lithographic apparatus. The method comprises using the lithographic apparatus to print one or more first printed structures and second printed structures. The first printed structures are printed by illumination having a first non-telecentricity and the second printed structures being printed by illumination having a second non-telecentricity, different to said first non-telecentricity. A focus dependent parameter related to a focus- dependent positional shift between the first printed structures and the second printed structures on said substrate is measured and a measurement of focus performance based at least in part on the focus dependent parameter is derived therefrom.

公开(公告)号：WO2017194281A1

公开(公告)日：2017-11-16

申请号：PCT/EP2017/059328

申请日：2017-04-20

Applicant: ASML NETHERLANDS B.V.

Inventor： SU, Jing ,  ZOU, Yi ,  LIN, Chenxi ,  HUNSCHE, Stefan ,  JOCHEMSEN, Marinus ,  LU, Yen-Wen ,  CHEONG, Lin, Lee

IPC: G03F7/20 ,  G06K9/00 ,  G06F17/50

Abstract: Disclosed herein are various methods of identifying a hot spot from a design layout or of predicting whether a pattern in a design layout is defective, using a machine learning model. An example method disclosed herein includes obtaining sets of characteristics of performance of hot spots, respectively, under a plurality of process conditions, respectively, in a device manufacturing process; determining, for each of the process conditions, for each of the hot spots, based on the characteristics under that process condition, whether that hot spot is defective; obtaining characteristics of each of the process conditions; obtaining characteristics of each of the hot spots; and training a machine learning model using a training set comprising the characteristics of one of the process conditions, the characteristics of one of the hot spots, and whether that hot spot is defective under that process condition.

Abstract translation: 这里公开了使用机器学习模型从设计布局识别热点或预测设计布局中的模式是否有缺陷的各种方法。 本文公开的示例方法包括分别在设备制造过程中的多个过程条件下分别获得热点性能的特征组; 基于在该处理条件下的特性，针对每个处理条件确定每个热点的热点是否有缺陷; 获得每个工艺条件的特性; 获得每个热点的特征; 并且使用训练集训练机器学习模型，所述训练集包括过程条件之一的特征，其中一个热点的特征以及在该过程条件下该热点是否有缺陷。

公开(公告)号：WO2019052747A1

公开(公告)日：2019-03-21

申请号：PCT/EP2018/071498

申请日：2018-08-08

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DONGEN, Jeroen ,  MC NAMARA, Elliott, Gerard ,  HINNEN, Paul, Christiaan ,  JOCHEMSEN, Marinus

IPC: G03F7/20

Abstract: Methods of controlling a patterning process are disclosed. In one arrangement, tilt data resulting from a measurement of tilt in an etching path through a target layer of a structure on a substrate is obtained. The tilt represents a deviation in a direction of the etching path from a perpendicular to the plane of the target layer. The tilt data is used to control a patterning process used to form a pattern in a further layer.

公开(公告)号：WO2017194285A1

公开(公告)日：2017-11-16

申请号：PCT/EP2017/059371

申请日：2017-04-20

Applicant: ASML NETHERLANDS B.V.

Inventor： JOCHEMSEN, Marinus ,  MIDDLEBROOKS, Scott, Anderson ,  HUNSCHE, Stefan ,  WANG, Te-Sheng

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70466 ,  G03F7/70616

Abstract: A method including obtaining an image of a plurality of structures on a substrate, wherein each of the plurality of structures is formed onto the substrate by transferring a corresponding pattern of a design layout; obtaining a displacement for each of the structures with respect to a reference point for that structure; and assigning, using a hardware computer system, each of the structures into one of a plurality of groups based on the displacement.

Abstract translation: 一种方法，包括：获得衬底上的多个结构的图像，其中通过转移设计布局的对应图案在所述衬底上形成所述多个结构中的每一个; 获得每个结构相对于该结构的参考点的位移; 并且使用硬件计算机系统将每个结构分配到基于位移的多个组中的一个中。