公开(公告)号：WO2017144343A1

公开(公告)日：2017-08-31

申请号：PCT/EP2017/053499

申请日：2017-02-16

Applicant: ASML NETHERLANDS B.V. ,  LAM RESEARCH CORPORATION

Inventor： KUBIS, Michael ,  JOCHEMSEN, Marinus ,  WISE, Richard, Stephen ,  SHAMMA, Nader ,  DIXIT, Girish, Anant ,  REIJNEN, Liesbeth ,  VIATKINA, Ekaterina, Mikhailovna ,  LUCA, Melisa ,  MULKENS, Johannes, Catharinus, Hubertus

IPC: G03F7/20

CPC classification number: G03F7/70525 ,  G03F7/70625

Abstract: A method, and associated apparatus and computer program, to determine corrections for a parameter of interest, such as critical dimension, of a patterning process. The method includes determining an exposure control correction for an exposure control parameter and, optionally, determining a process control correction for a process control parameter, based upon a measurement of the parameter of interest of a structure, and an exposure control relationship and a process control relationship. The exposure control relationship describes the dependence of the parameter of interest on the exposure control parameter and the process control relationship describes the dependence of the parameter of interest on the process control parameter. The exposure control correction and process control correction may be co-optimized to minimize variation of the parameter of interest of subsequent exposed and processed structures relative to a target parameter of interest.

Abstract translation: 用于确定图案化过程的感兴趣参数（例如临界尺寸）的校正的方法和相关装置以及计算机程序。 该方法包括基于结构的感兴趣参数的测量以及曝光控制关系和过程控制来确定曝光控制参数的曝光控制校正，以及可选地确定过程控制参数的过程控制校正 关系。 曝光控制关系描述了感兴趣的参数对曝光控制参数的依赖性，并且过程控制关系描述了感兴趣的参数对过程控制参数的依赖性。 曝光控制校正和过程控制校正可以被共同优化以最小化随后曝光和处理的结构相对于感兴趣的目标参数的感兴趣参数的变化。

公开(公告)号：WO2020036899A1

公开(公告)日：2020-02-20

申请号：PCT/US2019/046243

申请日：2019-08-12

Applicant: LAM RESEARCH CORPORATION

Inventor： SINGHAL, Akhil ,  SHAMMA, Nader ,  AUSTIN, Dustin, Zachary

IPC: H01L21/027 ,  H01L21/02 ,  G03F7/20

Abstract: A method for improving EUV lithographic patterning of SnO 2 layers is provided. One method embodiment includes introducing a hydrophobic surface treatment compound into a processing chamber for modifying a surface of an SnO 2 layer. The modification increases the hydrophobicity of the SnO 2 layer. The method also provides for depositing a photoresist layer on the surface of the SnO 2 layer via spin coating. The modification of the surface of the SnO 2 layer enhances adhesion of contact between the photoresist and the SnO 2 layer during and after spin coating.

公开(公告)号：WO2018213318A1

公开(公告)日：2018-11-22

申请号：PCT/US2018/032783

申请日：2018-05-15

Applicant: LAM RESEARCH CORPORATION

Inventor： SHAMMA, Nader ,  WISE, Richard ,  YU, Jengyi ,  TAN, Samantha

IPC: H01L21/027 ,  G03F7/20 ,  H01L21/033 ,  H01L21/02

Abstract: Methods and apparatuses for performing cycles of aspect ratio dependent deposition and aspect ratio independent etching on lithographically patterned substrates are described herein. Methods are suitable for reducing variation of feature depths and/or aspect ratios between features formed and partially formed by lithography, some partially formed features being partially formed due to stochastic effects. Methods and apparatuses are suitable for processing a substrate having a photoresist after extreme ultraviolet lithography. Some methods involve cycles of deposition by plasma enhanced chemical vapor deposition and directional etching by atomic layer etching.

公开(公告)号：WO2018152115A1

公开(公告)日：2018-08-23

申请号：PCT/US2018/018019

申请日：2018-02-13

Applicant: LAM RESEARCH CORPORATION

Inventor： YU, Jengyi ,  TAN, Samantha ,  JIANG, Yu ,  WU, Hui-Jung ,  WISE, Richard ,  PAN, Yang ,  SHAMMA, Nader ,  VOLOSSKIY, Boris

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/306 ,  H01L21/027 ,  H01L21/67

Abstract: Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer is formed conformally over sidewalls and horizontal surfaces of protruding features on a substrate. A passivation layer is then formed over tin oxide on the sidewalls, and tin oxide is then removed from the horizontal surfaces of the protruding features without being removed at the sidewalls of the protruding features. The material of the protruding features is then removed while leaving the tin oxide that resided at the sidewalls of the protruding features, thereby forming tin oxide spacers. Hydrogen-based and chlorine-based dry etch chemistries are used to selectively etch tin oxide in a presence of a variety of materials. In another method a patterned tin oxide hardmask layer is formed on a substrate by forming a patterned layer over an unpatterned tin oxide and transferring the pattern to the tin oxide.