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1.发明申请
公开(公告)号：WO2006085220A2
公开(公告)日：2006-08-17
申请号：PCT/IB2006000409
申请日：2006-02-09
Applicant: AZ ELECTRONIC MATERIALS USA
Inventor： ABDALLAH DAVID J , NEISSER MARK O , DAMMEL RALPH R , PAWLOWSKI GEORG , BIAFORE JOHN , ROMANO ANDREW R , KIM WOOKYU
CPC classification number: G03F7/091 , Y10S430/151
Abstract: A process for imaging a photoresist comprising the steps of, a) forming a stack of multiple layers of organic antireflective coatings on a substrate; b) forming a coating of a photoresist over the upper layer of the stack of multiple layers of organic antireflective coatings; c) imagewise exposing the photoresist with an exposure equipment; and, d) developing the coating with a developer.
Abstract translation: 一种使光致抗蚀剂成像的方法，包括以下步骤：a）在衬底上形成多层有机抗反射涂层的叠层; b）在多层有机抗反射涂层的叠层的上层上形成光刻胶涂层; c）用曝光设备使光刻胶成像曝光; 和d）用显影剂显影该涂层。
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公开(公告)号：WO2006064368A3
公开(公告)日：2006-08-17
申请号：PCT/IB2005003943
申请日：2005-12-13
Applicant: AZ ELECTRONIC MATERIALS USA
Inventor： ROMANO ANDREW R , HOULIHAN FRANCIS M
CPC classification number: B01J41/04
Abstract: The present invention provides for a process of treating organic solvents that are useful in the semiconductor industry by contacting the organic solvent with an anion exchange resin to remove anion contaminants.
Abstract translation: 本发明提供了通过使有机溶剂与阴离子交换树脂接触以去除阴离子污染物来处理可用于半导体工业的有机溶剂的方法。
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3.发明申请A PROCESS OF IMAGING A DEEP ULTRAVIOLET PHOTORESIST WITH A TOP COATING AND MATERIALS THEREOF 审中-公开一种具有顶部涂层的深层超紫外线光刻胶的成像方法及其材料
公开(公告)号：WO2005088397A2
公开(公告)日：2005-09-22
申请号：PCT/IB2005000627
申请日：2005-03-08
Applicant: AZ ELECTRONIC MATERIALS USA
Inventor： HOULIHAN FRANCIS M , DAMMEL RALPH R , ROMANO ANDREW R , SAKAMURI RAJ
CPC classification number: G03F7/2041 , G03F7/091 , G03F7/11
Abstract: The present invention relates to a process for imaging , preferably deep ultraviolet (uv), photoresists with a topcoat using, preferably deep uv, immersion lithography. The invention further relates to a barrier coating composition comprising a polymer with at least one ionizable group having a pKa ranging from about -9 to about 11. The invention also relates to a process for imaging a photoresist with a (top) barrier coat to prevent contamination of the photoresist from environmental contaminants.
Abstract translation: 本发明涉及一种用于使用优选深紫外浸没光刻术的具有顶涂层的成像（优选深紫外（UV））光刻胶的方法。 本发明还涉及包含聚合物的阻隔涂料组合物，所述聚合物具有至少一个具有约-9至约11的pKa的可离子化基团。本发明还涉及用（顶部）阻挡涂层对光致抗蚀剂进行成像以防止 污染环境污染物的光致抗蚀剂。
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