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1.发明申请NANOCOMPOSITE NEGATIVE PHOTOSENSITIVE COMPOSITION AND USE THEREOF 审中-公开NANOCOMPOSITE NEGATIVE PHOSOSTIVE COMPOSITION及其用途
公开(公告)号：WO2013064890A8
公开(公告)日：2013-12-19
申请号：PCT/IB2012002236
申请日：2012-10-31
发明人： LU PING-HUNG , CHEN CHUNWEI , MEYER STEPHEN
CPC分类号： G03F7/0047 , G03F7/027 , G03F7/038 , G03F7/405
摘要： The present invention relates to a negative photosensitive composition suitable for image-wise exposure and development as a negative photoresist comprising a negative photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of a photoresist coating film formed from the composition is preferably less than 5 mum. The negative photoresist composition is selected from (1 ) a composition comprising (i) a resin binder, (ii) a photoacid generator, and (iii) a cross-linking agent; or (2) a composition comprising (i) a resin binder, (ii) optionally, addition-polymerizeable, ethylenically unsaturated compound(s) and (iii) a photoinitiator; or (3) a composition comprising (i) a photopolymerizable compound containing at least two pendant unsaturated groups; (ii) ethylenically unsaturated photopolymerizable polyalkylene oxide hydrophilic compound(s); and (iii) a photoinitiator. The invention also relates to a process of forming an image using the novel photosensitive composition.
摘要翻译： 本发明涉及适用于作为负性光致抗蚀剂的成像曝光和显影的负型光敏组合物，其包含负性光致抗蚀剂组合物和平均粒度等于或大于10纳米的无机颗粒材料，其中光致抗蚀剂涂层的厚度 由组合物形成的膜优选小于5μm。 负光致抗蚀剂组合物选自（1）包含（i）树脂粘合剂，（ii）光致酸产生剂和（iii）交联剂）的组合物; 或（2）组合物，其包含（i）树脂粘合剂，（ii）任选的可加成聚合的烯属不饱和化合物和（iii）光引发剂; 或（3）包含（i）含有至少两个侧链不饱和基团的光聚合化合物的组合物; （ii）烯属不饱和光聚合聚环氧烷亲水化合物; 和（iii）光引发剂。 本发明还涉及使用新颖的光敏组合物形成图像的方法。
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2.发明申请LOW DIELECTRIC PHOTOIMAGEABLE COMPOSITIONS AND ELECTRONIC DEVICES MADE THEREFROM 审中-公开低介电可光组合物和电子器件
公开(公告)号：WO2013117989A1
公开(公告)日：2013-08-15
申请号：PCT/IB2013/000170
申请日：2013-02-08
IPC分类号： C08L83/04 , G03F7/075 , H01L21/02 , H01L21/312
CPC分类号： C08L83/04 , G03F7/038 , G03F7/0757 , G03F7/0758 , H01L21/02126 , H01L21/02282 , H01L23/5329 , H01L2924/0002 , Y10T428/24802 , H01L2924/00
摘要： This invention relates generally to silicon based photoresist compositions that can be used in forming low k dielectric constant materials suitable for use in electronic devices, methods of their use and the electronic devices made therefrom.
摘要翻译： 本发明一般涉及可用于形成适用于电子器件的低k介电常数材料的硅基光致抗蚀剂组合物，其使用方法和由其制成的电子器件。
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3.发明申请UNDERLAYER COATING COMPOSITION AND PROCESS FOR MANUFACTURING A MICROELECTRONIC DEVICE 审中-公开底层涂料组合物和制造微电子器件的方法
公开(公告)号：WO2012107823A1
公开(公告)日：2012-08-16
申请号：PCT/IB2012/000213
申请日：2012-02-07
IPC分类号： G03F7/09
CPC分类号： G03F7/091 , C09D161/24 , G03F7/0046 , G03F7/11 , C08L67/00
摘要： The invention relates to an underlayer coating composition comprising a polymer, where the polymer comprises at least one hydroxyaromatic unit in the backbone of the polymer phenol which has a pendant group comprising a fluoro or iodo moiety, and at least one unit comprising an aminoplast. The invention further relates to a process for forming an image using the composition, especially for EUV.
摘要翻译： 本发明涉及包含聚合物的底层涂料组合物，其中聚合物包含聚合物苯酚的主链中至少一个羟基芳族单元，其具有包含氟或碘部分的侧基，和至少一个包含氨基塑料的单元。 本发明还涉及使用该组合物形成图像的方法，特别是用于EUV。
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公开(公告)号：WO2011101737A1
公开(公告)日：2011-08-25
申请号：PCT/IB2011/000370
申请日：2011-02-17
IPC分类号： G03F7/09
CPC分类号： G03F7/091
摘要： A novel antireflective coating composition is provided, said antireflective coating composition comprising a) a compound of formula 1, b) a thermal acid generator, (c) at least one polymer, (Formula 1) (I) wherein U 1 and U 2 are independently a C 1 -C 10 alkylene group; V is selected from a C 1 -C 10 alkylene, arylene and aromatic alkylene; W is selected from H, C 1 -C 10 alkyl, aryl, alkylaryl and V-OH; Y is selected from H, W, and U 3 C(O)OW, wherein U 3 is independently a C 1 -C 10 alkylene group, and m is 1 to 10. Also provided are methods using said compositions as antireflective coatings for substrates in lithographic processes.
摘要翻译： 提供了一种新型抗反射涂料组合物，所述抗反射涂料组合物包含a）式1的化合物，b）热酸发生剂，（c）至少一种聚合物（式1）（I），其中U1和U2独立地为 C1-C10亚烷基; V选自C 1 -C 10亚烷基，亚芳基和芳族亚烷基; W选自H，C 1 -C 10烷基，芳基，烷基芳基和V-OH; Y选自H，W和U3C（O）OW，其中U3独立地为C1-C10亚烷基，m为1至10.还提供了使用所述组合物作为光刻工艺中的底物的抗反射涂层的方法。
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公开(公告)号：WO2010055406A2
公开(公告)日：2010-05-20
申请号：PCT/IB2009/007451
申请日：2009-11-12
CPC分类号： G03F7/039 , C07C307/02 , C07C309/10 , C07C309/19 , C07C317/04 , C07C381/12 , C07C2601/14 , C07C2602/42 , C07D285/00 , G03F7/0045 , G03F7/0392 , G03F7/091 , G03F7/095 , G03F7/0955 , G03F7/30 , Y10S430/115 , Y10S430/122 , Y10S522/904
摘要： An antireflective coating composition comprises a polymer having a dye or chromophore moiety and crosslinking functionality, an optional crosslinking component, and one or more photoactive compounds having the formula W-(L-(G)) p where W is PAG or Q, where PAG is a photoacid generator and Q is a quencher; each L is a direct bond or a linking group; each G is independently G1 or G2; G1 is OH; G2 is OCH=CH 2 ; p is 1 to 12.
摘要翻译： 抗反射涂料组合物包含具有染料或发色团部分和交联官能团的聚合物，任选的交联组分和一种或多种具有式W-（L-（G））p的光活性化合物，其中W是PAG或Q，其中PAG 是光致酸发生剂，Q是猝灭剂; 每个L是直接键或连接基团; 每个G独立为G1或G2; G1是OH; G 2是OCH = CH 2; p是1到12。
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公开(公告)号：WO2009053832A3
公开(公告)日：2009-11-26
申请号：PCT/IB2008002847
申请日：2008-10-21
IPC分类号： C07C55/02 , C07C211/03 , G03F7/004 , G03F7/09 , G03F7/11
CPC分类号： C07C211/05 , C07C55/08 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/091 , G03F7/095
摘要： Multilayer systemcomprising at least a first layer containing a photoacid generator substantially in soluble in a solvent of a second layer and in an optional third layer present in the system. Positive and negative developable bottom antiref lective coating compositions and coated substrate comprising a substrate, a layer of said antiref lective coating composition and a positive or negative photoresist composition. A process for forming an image. A compound of formula (I) HA+ (I).
摘要翻译： 至少含有第一层的多层体系，所述第一层含有基本上可溶于第二层的溶剂和系统中存在的任选的第三层的光致酸产生剂。 正和负可显影的底部抗反射涂层组合物和涂覆的基底，其包括基底，所述抗反射涂层组合物的层和正或负的光致抗蚀剂组合物。 用于形成图像的过程。 式（I）化合物HA +（I）。
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公开(公告)号：WO2009133456A1
公开(公告)日：2009-11-05
申请号：PCT/IB2009/005456
申请日：2009-04-29
发明人： ABDALLAH, David , DAMMEL, Ralph, R.
CPC分类号： G03F7/0752 , G03F7/091
摘要： Absorption graded silicon based antireflective coating and a method to produce it are described. The method comprises the steps of coating a substrate with an antireflective coating composition comprising a transparent siloxane, a light absorbing dye and heating the coated substrate at a temperature where a portion of the dye sublimes out of said composition to form a non-uniform absorption graded anti-reflective coating layer.
摘要翻译： 描述了吸收梯度硅基抗反射涂层及其制备方法。 该方法包括以下步骤：用包含透明硅氧烷，光吸收染料的抗反射涂料组合物涂覆基材，并在一部分染料升华出所述组合物以形成不均匀吸收分级的温度下加热涂布的基材 抗反射涂层。
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8.发明申请A PROCESS FOR SHRINKING DIMENSIONS BETWEEN PHOTORESIST PATTERN COMPRISING A PATTERN HARDENING STEP 审中-公开用于缩小包含图案硬化步骤的光电图案之间的缩小尺寸的方法
公开(公告)号：WO2009122276A1
公开(公告)日：2009-10-08
申请号：PCT/IB2009/005172
申请日：2009-03-30
CPC分类号： G03F7/0035 , G03F7/40
摘要： A process for forming a photoresist pattern on a device, comprising; a) forming a layer of first photoresist on a substrate from a first photoresist composition; b) imagewise exposing the first photoresist; c) developing the first photoresist to form a first photoresist pattern; d) treating the first photoresist pattern with a hardening compound comprising at least 2 amino (NH2) groups, thereby forming a hardened first photoresist pattern; e) forming a second photoresist layer on the region of the substrate including the hardened first photoresist pattern from a second photoresist composition; f) flood exposing the second photoresist; and, g) developing the flood exposed second photoresist to form a photoresist pattern with increased dimensions and reduced spaces.
摘要翻译： 一种在器件上形成光致抗蚀剂图案的工艺，包括： a）从第一光致抗蚀剂组合物在衬底上形成第一光致抗蚀剂层; b）成像曝光第一光致抗蚀剂; c）显影第一光致抗蚀剂以形成第一光致抗蚀剂图案; d）用包含至少2个氨基（NH 2）基团的硬化化合物处理第一光致抗蚀剂图案，从而形成硬化的第一光致抗蚀剂图案; e）在包含来自第二光致抗蚀剂组合物的硬化的第一光致抗蚀剂图案的衬底的区域上形成第二光致抗蚀剂层; f）暴露第二光致抗蚀剂; 并且g）显影暴露于第二光致抗蚀剂以形成具有增加的尺寸和减小的空间的光致抗蚀剂图案。
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公开(公告)号：WO2009019574A8
公开(公告)日：2009-08-27
申请号：PCT/IB2008002063
申请日：2008-07-30
CPC分类号： G03F7/0392 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： The present invention refers to a photoresist composition comprising (i) a polymer A comprising at least one acid labile group; (ii) at least one photoacid generator; (iii) at least one base; (iv) a polymer B, where polymer B is non- miscible with polymer A and soluble in the coating solvent, and; (v) a coating solvent composition. The present invention also relates to the process of imaging the photoresist.
摘要翻译： 本发明涉及光刻胶组合物，其包含（i）包含至少一个酸不稳定基团的聚合物A; （ii）至少一种光酸产生剂; （iii）至少一个碱基; （iv）聚合物B，其中聚合物B与聚合物A不混溶且可溶于涂布溶剂中; （v）涂料溶剂组合物。 本发明还涉及成像光致抗蚀剂的过程。
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10.发明申请
公开(公告)号：WO2009090474A1
公开(公告)日：2009-07-23
申请号：PCT/IB2008/003523
申请日：2008-12-15
CPC分类号： G03F7/091 , G02B1/111 , G02B27/0006 , G03F7/0752 , G03F7/16
摘要： The process of the present invention relates to imaging a photoresist film coated over an anti reflective coating film comprising a) forming an antireflective coating film from an antireflective coating composition, where the composition comprises a siloxane polymer, b) treating the antireflective film with an aqueous alkaline treating solution, c) rinsing the antireflective film treated with an aqueous rinsing solution, d) forming a coating of a photoresist over the film of the antireflective coating composition, e) imagewise exposing the photoresist film, and, f) developing the photoresist with an aqueous alkaline developing solution.
摘要翻译： 本发明的方法涉及对涂覆在抗反射涂层膜上的光致抗蚀剂膜进行成像，该方法包括a）由抗反射涂层组合物形成抗反射涂层膜，其中该组合物包含硅氧烷聚合物b ）用含水碱性处理溶液处理抗反射薄膜，c）漂洗用含水漂洗溶液处理的抗反射薄膜，d）在抗反射涂料组合物的薄膜上形成光致抗蚀剂涂层，e）使光致抗蚀剂薄膜成像曝光， 和f）用碱性显影水溶液显影光致抗蚀剂。
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