利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

108 条记录 (耗时 0.014 秒)

    COLOR FORMING COMPOSITES CAPABLE OF MULTI-COLORED IMAGING AND ASSOCIATED SYSTEMS AND METHODS
    2.
    发明申请
    COLOR FORMING COMPOSITES CAPABLE OF MULTI-COLORED IMAGING AND ASSOCIATED SYSTEMS AND METHODS 审中-公开
    具有多色成像和相关系统和方法的成色复合材料

    公开(公告)号：WO2008134548A1

    公开(公告)日：2008-11-06

    申请号：PCT/US2008/061627

    申请日：2008-04-25

    申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  KASPERCHIK, Vladek P. ,  BAILEY, Susan E.

    发明人： KASPERCHIK, Vladek P. ,  BAILEY, Susan E.

    IPC分类号： G03C1/76 ,  G03C1/00

    CPC分类号： B41M5/30 ,  B41M5/34

    摘要： Composites, methods, and systems for production of multi-color images which are developable at various wavelengths are disclosed and described. The color forming composite can include a first color forming layer having a first polymer matrix, a first color former, and a first developer where the first color former and the first developer can be in separate phases within the first color forming layer; a second color forming layer having a second polymer matrix, a second color former, and a second developer where the second color former and the second developer can be in separate phases within the second color forming layer; and at least one radiation absorber. The radiation absorber can be present in at least one of the first or second color forming layers. Additionally, the first color forming layer can have a first extinction coefficient that is higher than the second extinction coefficient of the second color forming layer.

    摘要翻译： 公开和描述了用于生产可在各种波长显影的多色图像的复合材料，方法和系统。 成色复合材料可以包括具有第一聚合物基质，第一成色剂和第一显色剂的第一成色层，其中第一成色剂和第一显影剂可以在第一颜色形成层内分开; 具有第二聚合物基体的第二颜色形成层，第二成色剂和第二显影剂，其中第二成色剂和第二显影剂可以在第二颜色形成层内分离相; 和至少一个辐射吸收器。 辐射吸收体可以存在于第一或第二颜色形成层中的至少一个中。 此外，第一颜色形成层可以具有高于第二颜色形成层的第二消光系数的第一消光系数。

    PROTECTIVE FILM
    3.
    发明申请
    PROTECTIVE FILM 审中-公开
    保护膜

    公开(公告)号：WO2008043848A3

    公开(公告)日：2008-05-29

    申请号：PCT/EP2007060909

    申请日：2007-10-12

    申请人： OPCO GMBH ,  CRONE KLAUS-PETER ,  HELLING GUENTER

    发明人： CRONE KLAUS-PETER ,  HELLING GUENTER

    IPC分类号： B65D81/26 ,  B32B27/18 ,  G03C1/685 ,  G03C1/76 ,  H01L51/52

    CPC分类号： G03C1/7614 ,  B32B27/18 ,  G02B1/105 ,  G02B1/14 ,  G02B5/23 ,  G03C1/685 ,  H01L51/5253 ,  H01L2251/5338

    摘要： The invention relates to a protective film against harmful substances, especially against gaseous substances towards which an object or device is sensitive, such as oxygen, moisture or other gases contained in the ambient atmosphere; the preparation and use of such a film; objects coated with such a film, such as OLEDs or photochromically coated panes or glasses; and devices comprising objects covered by such a film, such as illumination bodies or OLED-based displays or windows with photochromically coated panes.

    摘要翻译： 本发明涉及一种防护有害物质的保护膜，特别是防止物体或装置对其敏感的气态物质，例如包含在环境大气中的氧气，湿气或其他气体; 这种电影的制作和使用; 用这种膜涂覆的物体，诸如OLED或光致涂层的玻璃片或玻璃; 以及包含由这种膜覆盖的物体的装置，例如照明体或基于OLED的显示器或具有光致涂层的窗格的窗户。

    NOVEL PHOTOSENSITIVE RESIN COMPOSITIONS
    4.
    发明申请
    NOVEL PHOTOSENSITIVE RESIN COMPOSITIONS 审中-公开
    新型光敏树脂组合物

    公开(公告)号：WO2004081664A3

    公开(公告)日：2007-02-15

    申请号：PCT/US2004006810

    申请日：2004-03-08

    申请人： ARCH SPEC CHEM INC

    发明人： RUSHKIN ILYA ,  NAIINI AHMAD A ,  HOPLA RICHARD J ,  WATERSON PAMELA J ,  WEBER WILLIAM D

    IPC分类号： G03F7/023 ,  C08G73/22 ,  C08L79/00 ,  G03C1/76 ,  G03F7/038 ,  G03F7/075 ,  G03F7/30

    CPC分类号： C08G73/22 ,  C08L79/00 ,  G03F7/0382 ,  G03F7/0387 ,  G03F7/0751 ,  Y10S430/107

    摘要： A heat resistant negative working photosensitive composition that comprises (a) one or more polybenzoxazole precursor polymers (I): wherein x is an integer from about 10 to about 1000, y is an integer from 0 to about 900 and (x+y) is about less then 1000; Ar 1 is selected from the group consisting of a tetravalent aromatic group, a tetravalent heterocyclic group, or mixtures thereof; Ar 2 is selected from the group consisting a divalent aromatic, a divalent heterocyclic, a divalent alicyclic, a divalent aliphatic group that may contain silicon, or mixtures thereof; Ar 3 is selected from the group consisting a divalent aromatic group, a divalent aliphatic group, a divalent heterocyclic group, or mixtures thereof; Ar 4 is selected from the group consisting Ar 1 (OH) 2 or Ar 2 ; G is an organic group selected from the group consisting groups having a carbonyl, carbonyloxy or sulfonyl group attached directly to the terminal NH group of the polymer; (b) one or more photo-active compounds which release acid upon irradiation (PACs); (c) a latent crosslinker which contains at least two ~N-(CH 2 OR) n units wherein n=1 or 2 and R is a linear or branched C 1 -C 8 alkyl group, with the proviso that when a glycoluril is employed as the latent crosslinker, the G group in the polybenzoxazole precursor polymer is produced from the reaction of a cyclic anhydride; and (d) at least one solvent that is not NMP.

    摘要翻译： 一种耐热负性光敏组合物，其包含（a）一种或多种聚苯并恶唑前体聚合物（I）：其中x为约10至约1000的整数，y为0至约900的整数，（x + y）为 约少于1000; Ar 1选自四价芳族基团，四价杂环基团或其混合物; Ar 2选自二价芳族，二价杂环，二价脂环族，可含硅的二价脂族基团，或其混合物; Ar 3选自二价芳族基团，二价脂族基团，二价杂环基团或其混合物; Ar 4选自Ar 1（OH）2 2或Ar 2 O 2; G是选自具有直接与聚合物的末端NH基团连接的羰基，羰氧基或磺酰基的基团的有机基团; （b）一种或多种在照射时释放酸的光活性化合物（PAC）; （c）潜在交联剂，其含有n = 1或2的至少两个N-（CH 2）2或N 2单元，R是直链或支链C 1 -C 6烷基， SUB 1 -C 8烷基，条件是当使用甘脲作为潜在交联剂时，聚苯并恶唑前体聚合物中的G基团是由环状 酐; 和（d）至少一种不是NMP的溶剂。

    IMPROVED METHOD FOR BUMP EXPOSING RELIEF IMAGE PRINTING PLATES
    5.
    发明申请
    IMPROVED METHOD FOR BUMP EXPOSING RELIEF IMAGE PRINTING PLATES 审中-公开
    用于缓冲曝光图像打印板的改进方法

    公开(公告)号：WO2006019450A3

    公开(公告)日：2006-11-30

    申请号：PCT/US2005017023

    申请日：2005-05-16

    申请人： MACDERMID PRINTING SOLUTIONS

    发明人： ROBERTS DAVID H ,  MUELLER GREGORY E

    IPC分类号： G03C1/76 ,  G03C1/492 ,  G03C1/494 ,  G03C1/725 ,  G03C1/73 ,  G03C1/735 ,  G03F7/00 ,  G03F7/26

    CPC分类号： G03F7/2022 ,  G03F7/029 ,  G03F7/031 ,  G03F7/168 ,  Y10S430/145 ,  Y10S430/146

    摘要： A process of producing a relief image printing plate, the process comprising the steps of providing a photosensitive printing element, quenching dissolved oxygen in the photosensitive resin layer by pre-exposing the photosensitive layer to one or more sources of actinic radiation, wherein the range of wavelengths spanned by the one or more sources of actinic radiation differs by no more than about 20 nm, and imagewise exposing the photosensitive resin layer to actinic radiation to crosslink and cure the photosensitive resin layer. The photosensitive composition typically comprises at least one photoinitiator that is present in the photosensitive composition in an amount sufficient to provide an optical density in the photosensitive composition of between about 0.05 and 0.43 at a wavelength used to pre-expose the photosensitive composition.

    摘要翻译： 一种制造浮雕图像印版的方法，该方法包括以下步骤：提供感光印刷元件，通过将感光层预曝光到一种或多种光化辐射源来淬灭感光性树脂层中的溶解氧，其中， 由一种或多种光化辐射源所跨越的波长不超过约20nm，并将感光性树脂层成像曝光于光化辐射以使感光性树脂层交联和固化。 感光组合物通常包含光敏组合物中存在的至少一种光引发剂，其量足以在光敏组合物预曝光的波长下在光敏组合物中提供约0.05至0.43的光密度。

    PHOTORESIST COMPOSITIONS AND PROCESSESS OF USE
    6.
    发明申请
    PHOTORESIST COMPOSITIONS AND PROCESSESS OF USE 审中-公开
    光电组合物和使用过程

    公开(公告)号：WO2005067567A3

    公开(公告)日：2006-07-13

    申请号：PCT/US2005000156

    申请日：2005-01-05

    申请人： MICROCHEM CORP ,  NIPPON KAYAKU KK

    发明人： WEBER WILLIAM ,  MORI SATOSHI ,  HONDA NAO

    IPC分类号： G03F7/038 ,  G03C1/76 ,  G03F7/004 ,  G03F7/11 ,  G03F7/30 ,  G03F7/40

    CPC分类号： G03F7/40 ,  G03F7/038

    摘要： Photoresist compositions that demonstrate superior photolithographic performance and hardened resist films that show superior resistance to solvents, have excellent resistance to under plating during the electrodeposition of metals, and show excellent resist stripping characteristics. These photoresist compositions according to the invention are well-suited as for applications in the manufacture of MEMS and micromachine devices. These photoresist compositions according to the invention comprise one or more epoxide-substituted, polycarboxylic acid Resin Component (A), one or more photoacid generator compounds (B), and one or more solvent (C).

    摘要翻译： 显示优异的光刻性能的光刻胶组合物和显示出优异的耐溶剂性的硬化抗蚀剂膜，在金属电沉积期间具有优异的耐镀层性，并且显示出优异的抗剥离特性。 根据本发明的这些光致抗蚀剂组合物非常适用于制造MEMS和微机械装置的应用。 根据本发明的这些光致抗蚀剂组合物包含一种或多种环氧化物取代的多元羧酸树脂组分（A），一种或多种光酸产生剂化合物（B）和一种或多种溶剂（C）。

    SILICON CONTAINING TARC/BARRIER LAYER
    7.
    发明申请
    SILICON CONTAINING TARC/BARRIER LAYER 审中-公开
    含有TARC / BARRIER层的硅胶

    公开(公告)号：WO2006057782A1

    公开(公告)日：2006-06-01

    申请号：PCT/US2005/039719

    申请日：2005-11-03

    申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  HUANG, Wu-song, S. ,  BURNS, Sean, D. ,  VARANASI, Pushkara, Rao

    IPC分类号： G03C1/76

    CPC分类号： G03F7/091 ,  G03F7/0046 ,  G03F7/0752 ,  G03F7/2041

    摘要： A top anti-reflective coating material (TARC) and barrier layer, and the use thereof in lithography processes, is disclosed. The TARC / barrier layer may be especially useful for immersion lithography using water as the imaging medium. The TARC / barrier layer comprises a polymer which comprises at least one silicon-containing moiety and at least one aqueous base soluble moiety. Suitable polymers include polymers having a silsesquioxane (ladder or network) structure, such as polymers containing monomers having the structure (I): where R 1 comprises an aqueous base soluble moiety, and x is from about 1 to about 1.95, more preferably from about 1 to about 1.75.

    摘要翻译： 公开了一种顶部抗反射涂层材料（TARC）和阻挡层，以及其在光刻工艺中的用途。 TARC /阻挡层可能特别适用于使用水作为成像介质的浸没式光刻技术。 TARC /阻挡层包含含有至少一个含硅部分和至少一个水溶性碱可溶部分的聚合物。 合适的聚合物包括具有倍半硅氧烷（梯形或网络）结构的聚合物，例如含有具有结构（I）的单体的聚合物：其中R 1包含碱水溶性部分，x为约1至 约1.95，更优选约1至约1.75。

    WET DEVELOPABLE HARD MASK IN CONJUNCTION WITH THIN PHOTORESIST FOR MICRO PHOTOLITHOGRAPHY
    9.
    发明申请
    WET DEVELOPABLE HARD MASK IN CONJUNCTION WITH THIN PHOTORESIST FOR MICRO PHOTOLITHOGRAPHY 审中-公开
    与薄膜光刻胶相结合的可湿性硬面膜

    公开(公告)号：WO2005001901A3

    公开(公告)日：2005-12-01

    申请号：PCT/US2004018851

    申请日：2004-06-10

    申请人： BREWER SCIENCE INC ,  SUN SAM X ,  LI CHENGHONG

    发明人： SUN SAM X ,  LI CHENGHONG

    IPC分类号： G03C1/492 ,  G03C1/494 ,  G03C1/76 ,  G03C5/00 ,  G03F7/00 ,  G03F7/09 ,  G03F7/095 ,  G03F7/11 ,  G03F7/30 ,  H01L20060101 ,  H01L21/308 ,  H01L21/31 ,  H01L21/3213

    CPC分类号： G03F7/091 ,  G03F7/094 ,  G03F7/095 ,  G03F7/11 ,  H01L21/3081 ,  H01L21/32139

    摘要： A novel process for using a hard mask or protective layer in conjunction with an extremely thin photoresist is provided. In this process, a thin film of the protective layer is coated on the surface of a substrate that is to be selectively modified by reactive ion etch (RIE). The protective layer is photosensitive and anti-reflective. An extremely thin photoresist layer is coated on top of the protective layer. The stack of the films is selectively exposed to actinic radiation at a wavelength determined by the sensitivities of the protective layer and photoresist layer. The latent images on the photoresist and protective layers resulting from the exposure are developed with a common alkaline developer. The three dimensional patterns of photoresist and underlying protective layer are formed simultaneously by the single exposure and single development. When the underlying substrate is etched by RIE, the protective layer is the masking layer, not the photoresist.

    摘要翻译： 提供了与非常薄的光致抗蚀剂结合使用硬掩模或保护层的新颖方法。 在该过程中，保护层的薄膜被涂覆在待通过反应离子蚀刻（RIE）选择性修饰的基底的表面上。 保护层是光敏的和抗反射的。 在保护层的顶部涂覆极薄的光致抗蚀剂层。 以由保护层和光致抗蚀剂层的敏感度确定的波长选择性地暴露于光化辐射。 用普通的碱性显影剂显影在光致抗蚀剂和由曝光产生的保护层上的潜像。 光刻胶和下层保护层的三维图案通过单次曝光和单次显影同时形成。 当通过RIE蚀刻底层衬底时，保护层是掩模层，而不是光致抗蚀剂。