USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT AND / OR COBALT ALLOY COMPRISING SUBSTRATES
    1.
    发明申请
    USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT AND / OR COBALT ALLOY COMPRISING SUBSTRATES 审中-公开
    化学机械抛光(CMP)组合物用于抛光包含基材的钴和/或钴合金的用途

    公开(公告)号:WO2017162462A1

    公开(公告)日:2017-09-28

    申请号:PCT/EP2017/055826

    申请日:2017-03-13

    Applicant: BASF SE

    Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a poly(amino acid) and or a salt thereof (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

    Abstract translation: 化学机械抛光(CMP)组合物(Q)用于包含(i)钴和/或(ii)钴合金的基材(S)的化学机械抛光的用途,其中所述CMP组合物 (Q)包含(A)无机颗粒(B),聚氨基酸和/或其盐(C)至少一种氨基酸,(D)至少一种氧化剂(E),水性介质,并且其中所述CMP组合物 (Q)的pH值为7-10。

    USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT COMPRISING SUBSTRATES
    2.
    发明申请
    USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT COMPRISING SUBSTRATES 审中-公开
    使用化学机械抛光(CMP)组合物,用于抛光包含衬底的钴

    公开(公告)号:WO2017025536A1

    公开(公告)日:2017-02-16

    申请号:PCT/EP2016/068964

    申请日:2016-08-09

    Applicant: BASF SE

    CPC classification number: C09G1/02

    Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and /or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer ≥ 1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.

    Abstract translation: 使用化学机械抛光(CMP)组合物(Q)用于包括(i)钴和/或(ii)钴合金和(iii)TiN和/或TaN的基底(S)的化学机械抛光,其中 CMP组合物(Q)包含(E)无机颗粒(F)至少一种包含氨基和酸基(Y)的有机化合物,其中所述化合物包含n个氨基和至少n + 1个酸性质子,其中n (G)至少一种氧化剂,其量相对于相应的CMP组合物的总重量为0.2至2.5重量%,(H)其中CMP组合物(Q)具有的水性介质 pH大于6且小于9。

Patent Agency Ranking