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    CHEMICAL-MECHANICAL POLISHING COMPOSITION COMPRISING BENZOTRIAZOLE DERIVATIVES AS CORROSION INHIBITORS
    2.
    发明申请
    CHEMICAL-MECHANICAL POLISHING COMPOSITION COMPRISING BENZOTRIAZOLE DERIVATIVES AS CORROSION INHIBITORS 审中-公开
    包含苯并三唑衍生物作为腐蚀抑制剂的化学 - 机械抛光组合物

    公开(公告)号：WO2015004567A2

    公开(公告)日：2015-01-15

    申请号：PCT/IB2014/062747

    申请日：2014-07-01

    Applicant: BASF SE ,  BASF (CHINA) COMPANY LIMITED

    Inventor： REICHARDT, Robert ,  KALLER, Martin ,  LAUTER, Michael ,  LI, Yuzhuo ,  KLIPP, Andreas

    CPC classification number: C09K3/1463 ,  C09G1/02 ,  H01L21/3212

    Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

    Abstract translation: 提供化学机械抛光（CMP）组合物，其包含（A）选自苯并三唑衍生物作为缓蚀剂的一种或多种化合物和（B）无机颗粒，有机颗粒或 其复合物或混合物。 本发明还涉及选自苯并三唑衍生物的某些化合物作为腐蚀抑制剂的用途，尤其是用于提高化学机械抛光（CMP）组合物用于从基底去除钽或氮化钽的选择性，用于制造 所述衬底上存在铜的半导体器件。

    COMPOSITION FOR POST CHEMICAL-MECHANICAL-POLISHING CLEANING
    5.
    发明申请
    COMPOSITION FOR POST CHEMICAL-MECHANICAL-POLISHING CLEANING 审中-公开
    用于化学机械抛光清洁的组合物

    公开(公告)号：WO2017108748A2

    公开(公告)日：2017-06-29

    申请号：PCT/EP2016/081856

    申请日：2016-12-20

    Applicant: BASF SE

    Inventor： DÄSCHLEIN, Christian ,  SIEBERT, Max ,  LAUTER, Michael ,  PRZYBYLSKI, Peter ,  PROELSS, Julian ,  KLIPP, Andreas ,  GUEVENC, Haci Osman ,  LEUNISSEN, Leonardus ,  BAUMANN, Roelf-Peter ,  WEI, Te Yu

    CPC classification number: C11D11/0047 ,  C11D3/0026 ,  C11D3/0073 ,  C11D3/3707 ,  C11D3/3719 ,  C11D3/3753 ,  C11D3/3765 ,  C11D3/3776 ,  H01L21/02074 ,  H01L21/3212

    Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more nonionic polymers selected from the group consisting of poly- acrylamides, polyhydroxyethyl(meth)acrylates (PHE(M)A), polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA), polymers of formula (I), and mixtures thereof, wherein R1 is hydrogen, methyl, ethyl, n-propyl, /so-propyl, n-butyl, iso-butyl, or sec-butyl, R2 is hydrogen or methyl, and n is an integer, (B) poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5.

    Abstract translation: 描述了后化学机械抛光（CMP后）清洁组合物，其包含以下成分或由以下成分组成：（A）一种或多种选自以下的非离子聚合物：聚丙烯酰胺，聚（甲基）丙烯酸羟乙酯 ）丙烯酸酯（PHE（M）A），聚乙烯吡咯烷酮（PVP），聚乙烯醇（PVA），式（I）的聚合物及其混合物，其中R 1为氢，甲基，乙基，正丙基，异丙基， （B）聚（丙烯酸）（PAA）或丙烯酸 - 马来酸共聚物，其质均摩尔质量为（甲基）丙烯酸正丁酯，异丁基或仲丁基，R 2为氢或甲基，且n为整数， Mw）至10,000g / mol，和（C）水，其中组合物的pH在7.0至10.5的范围内。

    A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A GLYCOSIDE
    7.
    发明申请
    A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A GLYCOSIDE 审中-公开
    一种包含甘氨酸的化学机械抛光（CMP）组合物

    公开(公告)号：WO2013035034A1

    公开(公告)日：2013-03-14

    申请号：PCT/IB2012/054555

    申请日：2012-09-04

    Applicant: BASF SE ,  LI, Yuzhuo ,  LAUTER, Michael ,  LANGE, Roland ,  BASF (CHINA) COMPANY LIMITED

    Inventor： LI, Yuzhuo ,  LAUTER, Michael ,  LANGE, Roland

    IPC: C09G1/02

    CPC classification number: C09G1/02 ,  C09G1/00 ,  C09K13/00 ,  C23F1/00 ,  H01L21/30625 ,  H01L21/31053

    Abstract: A chemical mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a glycoside of the formulae 1 to 6 wherein R 1 is alkyl, aryl, or alkylaryl, R 2 is H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl, R 3 is H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl, R 4 is H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl, R 5 is H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl, and the total number of monosaccharide units (X1, X2, X3, X4, X5, or X6) in the glycoside is in the range of from 1 to 20, and (C) an aqueous medium.

    Abstract translation: 一种化学机械抛光（CMP）组合物，其包含（A）无机颗粒，有机颗粒或其混合物或复合物，（B）式1至6的糖苷，其中R 1是烷基，芳基或烷芳基，R 2是H， X1，X2，X3，X4，X5，X6，烷基，芳基或烷基芳基，R3是H，X1，X2，X3，X4，X5，X6，烷基，芳基或烷基芳基，R4是H，X1，X2， X3，X4，X5，X6，烷基，芳基或烷基芳基，R5是H，X1，X2，X3，X4，X5，X6，烷基，芳基或烷基芳基，单糖单元（X1，X2， X3，X4，X5或X6）的范围为1〜20，（C）水性介质。

    COMPOSITION FOR POST CHEMICAL-MECHANICAL-POLISHING CLEANING
    9.
    发明申请
    COMPOSITION FOR POST CHEMICAL-MECHANICAL-POLISHING CLEANING 审中-公开
    用于化学机械抛光清洁的组合物

    公开(公告)号：WO2017211653A1

    公开(公告)日：2017-12-14

    申请号：PCT/EP2017/063215

    申请日：2017-05-31

    Applicant: BASF SE

    Inventor： DAESCHLEIN, Christian ,  SIEBERT, Max ,  LAUTER, Michael ,  LEUNISSEN, Leonardus ,  GARCIA ROMERO, Ivan ,  GUEVENC, Haci Osman ,  PRZYBYLSKI, Peter ,  PROELSS, Julian ,  KLIPP, Andreas

    IPC: C11D1/72 ,  C11D1/722 ,  C11D3/37 ,  C11D11/00 ,  H01L21/02

    CPC classification number: C11D1/721 ,  C11D1/722 ,  C11D3/3765 ,  C11D11/0047 ,  H01L21/02074 ,  H05K3/26

    Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more water-soluble nonionic copolymers of the general formula (I) and mixtures thereof, formula (I) wherein R 1 and R 3 are idependently from each other hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, iso-Butyl, or sec-butyl, R 2 is methyl and x and y are an integer,1 (B)poly(acrylic acid) (PAA) oracrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C)water, wherein the pH of the composition is in the range of from 7.0 to 10.5.

    Abstract translation: 描述了后化学机械抛光（CMP后）清洁组合物，其包含以下成分或由以下成分组成：（A）一种或多种通式（I）的水溶性非离子共聚物及其混合物 （I）其中R 1和R 3彼此独立地为氢，甲基，乙基，正丙基，异丙基，正丁基，异丁基，异丁基， 或仲丁基，R 2为甲基且x和y为整数，1（B）聚（丙烯酸）（PAA）丙烯酸 - 马来酸共聚物，其质量平均摩尔质量为Mw ）至10,000克/摩尔，和（C）水，其中组合物的pH在7.0至10.5的范围内。

    A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION
    10.
    发明申请
    A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION 审中-公开
    化学机械抛光（CMP）组合物

    公开(公告)号：WO2016008896A1

    公开(公告)日：2016-01-21

    申请号：PCT/EP2015/066086

    申请日：2015-07-14

    Applicant: BASF SE

    Inventor： REICHARDT, Robert ,  SIEBERT, Max ,  LAN, Yongqing ,  LAUTER, Michael ,  GUEVENC, Haci Osman ,  PRÖLSS, Julian ,  USMAN IBRAHIM, Sheik Ansar ,  GOLZARIAN, Reza

    IPC: C09G1/00

    CPC classification number: C09G1/02 ,  C09G1/00

    Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Colloidal or fumed inorganic particles (A) or a mixture thereof in a total amount of from 0.0001 to 2.5 wt.-% based on the total weight of the respective CMP composition (B) at least one amino acid in a total amount of from 0,2 to 1 wt.-% based on the total weight of the respective CMP composition (C) at least one corrosion inhibitor in a total amount of from 0,001 to 0,02 wt.-% based on the total weight of the respective CMP composition (D) hydrogen peroxide as oxidizing agent in a total amount of from 0.0001 to 2 wt.-% based on the total amount of the respective CMP composition (E) aqueous medium wherein the CMP composition (Q) has a pH in the range of from 6 to 9.5.

    Abstract translation: 化学机械抛光（CMP）组合物（Q），其包含（A）基于相应CMP组合物的总重量的总量为0.0001至2.5重量％的胶体或热解无机颗粒（A）或其混合物 （B）基于相应CMP组合物（C）的总重量，总量为0.2至1重量％的至少一个氨基酸至少一种腐蚀抑制剂，总量为0.001至0 ，相对于相应的CMP组合物（E）的总量，基于相对于CMP组合物（D）的总重量为02重量％，基于过氧化氢作为氧化剂的总重量为0.0001重量％至2重量％ 水性介质，其中CMP组成（Q）的pH在6至9.5的范围内。

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