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    A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION
    1.
    发明申请
    A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION 审中-公开
    化学机械抛光（CMP）组合物

    公开(公告)号：WO2016008896A1

    公开(公告)日：2016-01-21

    申请号：PCT/EP2015/066086

    申请日：2015-07-14

    Applicant: BASF SE

    Inventor： REICHARDT, Robert ,  SIEBERT, Max ,  LAN, Yongqing ,  LAUTER, Michael ,  GUEVENC, Haci Osman ,  PRÖLSS, Julian ,  USMAN IBRAHIM, Sheik Ansar ,  GOLZARIAN, Reza

    IPC: C09G1/00

    CPC classification number: C09G1/02 ,  C09G1/00

    Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Colloidal or fumed inorganic particles (A) or a mixture thereof in a total amount of from 0.0001 to 2.5 wt.-% based on the total weight of the respective CMP composition (B) at least one amino acid in a total amount of from 0,2 to 1 wt.-% based on the total weight of the respective CMP composition (C) at least one corrosion inhibitor in a total amount of from 0,001 to 0,02 wt.-% based on the total weight of the respective CMP composition (D) hydrogen peroxide as oxidizing agent in a total amount of from 0.0001 to 2 wt.-% based on the total amount of the respective CMP composition (E) aqueous medium wherein the CMP composition (Q) has a pH in the range of from 6 to 9.5.

    Abstract translation: 化学机械抛光（CMP）组合物（Q），其包含（A）基于相应CMP组合物的总重量的总量为0.0001至2.5重量％的胶体或热解无机颗粒（A）或其混合物 （B）基于相应CMP组合物（C）的总重量，总量为0.2至1重量％的至少一个氨基酸至少一种腐蚀抑制剂，总量为0.001至0 ，相对于相应的CMP组合物（E）的总量，基于相对于CMP组合物（D）的总重量为02重量％，基于过氧化氢作为氧化剂的总重量为0.0001重量％至2重量％ 水性介质，其中CMP组成（Q）的pH在6至9.5的范围内。

    CHEMICAL-MECHANICAL POLISHING COMPOSITION COMPRISING BENZOTRIAZOLE DERIVATIVES AS CORROSION INHIBITORS
    4.
    发明申请
    CHEMICAL-MECHANICAL POLISHING COMPOSITION COMPRISING BENZOTRIAZOLE DERIVATIVES AS CORROSION INHIBITORS 审中-公开
    包含苯并三唑衍生物作为腐蚀抑制剂的化学 - 机械抛光组合物

    公开(公告)号：WO2015004567A2

    公开(公告)日：2015-01-15

    申请号：PCT/IB2014/062747

    申请日：2014-07-01

    Applicant: BASF SE ,  BASF (CHINA) COMPANY LIMITED

    Inventor： REICHARDT, Robert ,  KALLER, Martin ,  LAUTER, Michael ,  LI, Yuzhuo ,  KLIPP, Andreas

    CPC classification number: C09K3/1463 ,  C09G1/02 ,  H01L21/3212

    Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

    Abstract translation: 提供化学机械抛光（CMP）组合物，其包含（A）选自苯并三唑衍生物作为缓蚀剂的一种或多种化合物和（B）无机颗粒，有机颗粒或 其复合物或混合物。 本发明还涉及选自苯并三唑衍生物的某些化合物作为腐蚀抑制剂的用途，尤其是用于提高化学机械抛光（CMP）组合物用于从基底去除钽或氮化钽的选择性，用于制造 所述衬底上存在铜的半导体器件。

    USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT AND / OR COBALT ALLOY COMPRISING SUBSTRATES
    6.
    发明申请
    USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT AND / OR COBALT ALLOY COMPRISING SUBSTRATES 审中-公开
    使用化学机械抛光（CMP）组合物，用于抛光包含衬底的钴和/或钴合金

    公开(公告)号：WO2016102204A1

    公开(公告)日：2016-06-30

    申请号：PCT/EP2015/079349

    申请日：2015-12-11

    Applicant: BASF SE

    Inventor： REICHARDT, Robert ,  SIEBERT, Max ,  LAN, Yongqing ,  LAUTER, Michael ,  USMAN IBRAHIM, Sheik Ansar ,  GOLZARIAN, Reza ,  GUEVENC, Haci Osman ,  PROELSS, Julian ,  LEUNISSEN, Leonardus

    IPC: C09G1/00 ,  C09G1/02

    CPC classification number: C09G1/02 ,  C09G1/04 ,  C09K13/00 ,  H01L21/461

    Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a triazine derivative of the general formula (I) wherein R 1 , R 2 , R 3 , R 4 , R 5 and R 6 are independently from each other H, methyl, ethyl, propyl, butyl, pentyl, C 2 -C 10 -alkylcarboxylic acid, hydroxymethyl, vinyl or allyl (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

    Abstract translation: 使用化学机械抛光（CMP）组合物（Q）用于包含（i）钴和/或（ii）钴合金的基底（S）的化学机械抛光，其中所述CMP组合物（Q）包含（A）无机 颗粒（B）通式（I）的三嗪衍生物，其中R1，R2，R3，R4，R5和R6彼此独立地为H，甲基，乙基，丙基，丁基，戊基，C2-C10-烷基羧酸， 羟甲基，乙烯基或烯丙基（C）至少一个氨基酸，（D）至少一种氧化剂（E）水性介质，其中所述CMP组合物（Q）的pH为7至10。

    USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT COMPRISING SUBSTRATES
    10.
    发明申请
    USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT COMPRISING SUBSTRATES 审中-公开
    使用化学机械抛光（CMP）组合物，用于抛光包含衬底的钴

    公开(公告)号：WO2017025536A1

    公开(公告)日：2017-02-16

    申请号：PCT/EP2016/068964

    申请日：2016-08-09

    Applicant: BASF SE

    Inventor： REICHARDT, Robert ,  SIEBERT, Max ,  LAN, Yongqing ,  LAUTER, Michael ,  USMAN IBRAHIM, Sheik Ansar ,  GOLZARIAN, Reza M. ,  WEI, Te Yu ,  GUEVENC, Haci Osman ,  PROELSS, Julian ,  LEUNISSEN, Leonardus

    IPC: C09G1/02

    CPC classification number: C09G1/02

    Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and /or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer ≥ 1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.

    Abstract translation: 使用化学机械抛光（CMP）组合物（Q）用于包括（i）钴和/或（ii）钴合金和（iii）TiN和/或TaN的基底（S）的化学机械抛光，其中 CMP组合物（Q）包含（E）无机颗粒（F）至少一种包含氨基和酸基（Y）的有机化合物，其中所述化合物包含n个氨基和至少n + 1个酸性质子，其中n （G）至少一种氧化剂，其量相对于相应的CMP组合物的总重量为0.2至2.5重量％，（H）其中CMP组合物（Q）具有的水性介质 pH大于6且小于9。

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