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    PROCESS FOR REMOVING BULK MATERIAL LAYER FROM SUBSTRATE AND CHEMICAL MECHANICAL POLISHING AGENT SUITABLE FOR THIS PROCESS
    6.
    发明申请
    PROCESS FOR REMOVING BULK MATERIAL LAYER FROM SUBSTRATE AND CHEMICAL MECHANICAL POLISHING AGENT SUITABLE FOR THIS PROCESS 审中-公开
    用于从基板去除块状材料层的方法和适用于本工艺的化学机械抛光剂

    公开(公告)号：WO2011064735A1

    公开(公告)日：2011-06-03

    申请号：PCT/IB2010/055427

    申请日：2010-11-25

    Applicant: BASF SE ,  RAMAN, Vijay Immanuel ,  LI, Yuzhuo ,  BRANDS, Mario ,  LAN, Yongqing ,  RUSHING, Kenneth ,  RAMJI, Karpagavalli ,  BASF (CHINA) COMPANY LIMITED

    Inventor： RAMAN, Vijay Immanuel ,  LI, Yuzhuo ,  BRANDS, Mario ,  LAN, Yongqing ,  RUSHING, Kenneth ,  RAMJI, Karpagavalli

    IPC: C09G1/02 ,  C09K3/14 ,  H01L21/321 ,  H01L21/3105 ,  H01L21/306

    CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463

    Abstract: An aqueous chemical mechanical polishing (CMP) agent (A) comprising solid particles (a1) containing (a11) a corrosion inhibitor for metals, and (a12) a solid material, the said solid particles (a1) being finely dispersed in the aqueous phase; and its use in a process for removing a bulk material layer from the surface of a substrate and planarizing the exposed surface by chemical mechanical polishing until all material residuals are removed from the exposed surface, wherein the CMP agent exhibits at the end of the chemical mechanical polishing, without the addition of supplementary materials, － the same or essentially the same static etch rate (SER) as at its start and a lower material removal rate (MRR) than at its start, － a lower SER than at its start and the same or essentially the same MRR as at its start or － a lower SER and a lower MRR than at its start; such that the CMP agent exhibits a soft landing behavior.

    Abstract translation: 一种包含固体颗粒（a1）的水性化学机械抛光（CMP）剂（A），其包含（a11）金属缓蚀剂和（a12）固体材料，所述固体颗粒（a1）细分散在水相中 ; 并且其用于从基材表面除去大体材料层并通过化学机械抛光使暴露表面平坦化的工艺，直到所有材料残余物从暴露表面除去，其中CMP试剂在化学机械 抛光，而不添加补充材料， - 与其开始时相同或基本相同的静态蚀刻速率（SER）和较低的材料去除速率（MRR），比起始时更低的SER， 与其开始时相同或基本相同的MRR，或比开始时更低的SER和更低的MRR; 使得CMP试剂表现出软着色行为。

    USE OF A CHEMICAL-MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING A SUBSTRATE OR LAYER CONTAINING AT LEAST ONE III-V MATERIAL
    8.
    发明申请
    USE OF A CHEMICAL-MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING A SUBSTRATE OR LAYER CONTAINING AT LEAST ONE III-V MATERIAL 审中-公开
    使用化学机械抛光（CMP）组合物来抛光含有至少一种III-V材料的基底或层

    公开(公告)号：WO2014184708A2

    公开(公告)日：2014-11-20

    申请号：PCT/IB2014/061234

    申请日：2014-05-06

    Applicant: BASF SE ,  BASF (CHINA) COMPANY LIMITED

    Inventor： LAN, Yongqing ,  PRZYBYLSKI, Peter ,  BAO, Zhenyu ,  PRÖLß, Julian

    CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/30625

    Abstract: Described is a use of a chemical-mechanical polishing (CMP) composition for polishing a sub- strate or layer containing one or more lll-V materials, wherein the chemical-mechanical polishing (CMP) composition comprises the following components: (A) surface modified silica particles having a negative zeta potential of -15 mV or below at a pH in the range of from 2 to 6 (B) one or more constituents selected from the group consisting of (i) substituted and unsubstituted triazoles not having an aromatic ring annealed to the triazol ring, (ii) benzimidazole, (iii) chelating agents selected from the group consisting of amino acids with two or more carboxyl groups, aliphatic carboxylic acids, and the respective salts thereof, and (iv) homopolymers and copolymers of acrylic acid, and the respective salts thereof, (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

    Abstract translation: 描述了化学机械抛光（CMP）组合物用于抛光含有一种或多种III-V材料的底层或层的用途，其中化学机械抛光（CMP）组合物包含以下组分：（A）表面 在2至6（B）的pH范围内具有-15mV或更低的负ζ电位的改性二氧化硅颗粒（B）选自以下的一种或多种组分：（i）不具有芳环的取代和未取代的三唑 退火到三唑环，（ii）苯并咪唑，（iii）选自具有两个或更多个羧基的氨基酸，脂族羧酸及其各自的盐的螯合剂，和（iv）丙烯酸的均聚物和共聚物 酸及其各自的盐，（C）水（D）任选的一种或多种其它组分，其中组合物的pH在2至6的范围内。

    A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A POLYMERIC POLYAMINE
    10.
    发明申请
    A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A POLYMERIC POLYAMINE 审中-公开
    包含聚合多胺的化学机械抛光（CMP）组合物

    公开(公告)号：WO2012127398A1

    公开(公告)日：2012-09-27

    申请号：PCT/IB2012/051292

    申请日：2012-03-19

    Applicant: BASF SE ,  NOLLER, Bastian Marten ,  LI, Yuzhuo ,  FRANZ, Diana ,  RUSHING, Kenneth ,  LAUTER, Michael ,  SHEN, Daniel Kwo-Hung ,  LAN, Yongqing ,  BAO, Zhenyu ,  BASF (CHINA) COMPANY LIMITED

    Inventor： NOLLER, Bastian Marten ,  LI, Yuzhuo ,  FRANZ, Diana ,  RUSHING, Kenneth ,  LAUTER, Michael ,  SHEN, Daniel Kwo-Hung ,  LAN, Yongqing ,  BAO, Zhenyu

    IPC: C09G1/02

    CPC classification number: C09G1/02 ,  C09G1/16 ,  H01L21/30625

    Abstract: A chemical-mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a composite or mixture thereof, (B) a polymeric polyamine or a salt thereof comprising at least one type of pendant group (Y) which comprises at least one moiety (Z), wherein (Z) is a carboxylate (-COOR 1 ), sulfonate (-SO 3 R 2 ), sulfate (-O-SO 3 R 3 ), phos- phonate (-P(=O)(OR 4 )(OR 5 ) ), phosphate (-O-P(=O)(OR 6 )(OR 7 ) ), carboxylic acid (-COOH), sulfonic acid (-SO 3 H), sulfuric acid (-O-SO 3 -), phosphonic acid (-P(=O)(OH) 2 ), phosphoric acid (-O-P(=O)(OH) 2 ) moiety, or their deproto- nated forms, R 1 is alkyl, aryl, alkylaryl, or arylalkyl R 2 is alkyl, aryl, alkylaryl, or arylalkyl, R 3 is alkyl, aryl, alkylaryl, or arylalkyl, R 4 is alkyl, aryl, alkylaryl, or arylalkyl, R 5 is H, alkyl, aryl, alkylaryl, or arylalkyl, R 6 is alkyl, aryl, alkylaryl, or arylalkyl, R 7 is H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.

    Abstract translation: 一种化学机械抛光（CMP）组合物，其包含（A）无机颗粒，有机颗粒或其复合材料或混合物，（B）聚合多胺或其盐，其包含至少一种类型的侧基（Y），其包含 至少一个部分（Z），其中（Z）是羧酸酯（-COOR1），磺酸酯（-SO3R2），硫酸酯（-O-SO3R3），磷酸酯（-P（= O）（OR4） ，磷酸酯（-OP（= O）（OR 6）（OR 7）），羧酸（-COOH），磺酸（-SO 3 H），硫酸（-O-SO 3 - ），膦酸（-P（= O） （OH）2），磷酸（-OP（= O）（OH）2）部分或其脱羧形式，R1是烷基，芳基，烷基芳基或芳烷基R2是烷基，芳基，烷基芳基或芳基烷基， R 3是烷基，芳基，烷基芳基或芳烷基，R 4是烷基，芳基，烷基芳基或芳烷基，R 5是H，烷基，芳基，烷基芳基或芳基烷基，R 6是烷基， 烷基，芳基，烷基芳基或芳烷基，和（C）水性介质。

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