公开(公告)号：WO2017101109A1

公开(公告)日：2017-06-22

申请号：PCT/CN2015/097883

申请日：2015-12-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： LU, Xiaoyong ,  LI, Dong ,  LI, Xiaolong ,  LONG, Chunping

IPC: H01L21/3205 ,  H01L21/768

CPC classification number: H01L21/32051 ,  C23C14/0073 ,  C23C14/0641 ,  C23C14/14 ,  C23C14/34 ,  H01L21/2855 ,  H01L21/7685 ,  H01L21/76895 ,  H01L23/53223 ,  H01L27/1259 ,  H01L29/458

Abstract: A thin film transistor, a thin film transistor array substrate, and a display apparatus, and their fabrication methods. The thin film transistor is formed by forming a source and drain electrode structure(170). To form the source and drain electrode structure(170), at least one metal film(177) is formed using a target of a metal element in a sputtering chamber. A gas is introduced in the sputtering chamber to in-situ react with the metal element to form an anti-reflection layer(179) over the at least one metal film(177).

Abstract translation: 薄膜晶体管，薄膜晶体管阵列基板和显示装置及其制造方法。 薄膜晶体管通过形成源极和漏极电极结构（170）而形成。 为了形成源电极和漏电极结构（170），在溅射室中使用金属元素的靶形成至少一个金属膜（177）。 在溅射室中引入气体以原位与金属元素反应以在至少一个金属膜（177）上形成抗反射层（179）。

公开(公告)号：WO2017028543A1

公开(公告)日：2017-02-23

申请号：PCT/CN2016/078561

申请日：2016-04-06

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： LI, Dong ,  LU, Xiaoyong ,  ZHANG, Shuai ,  LIU, Zheng ,  LONG, Chunping

IPC: H01L21/02 ,  H01L29/786

CPC classification number: H01L21/02678 ,  G02B27/0988 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02675 ,  H01L21/02691 ,  H01L29/786 ,  H01L29/78672

Abstract: A method for forming a polycrystalline silicon thin film, a related optical film, a related polycrystalline silicon thin film, and a related thin film transistor are provided. The method comprises: providing an amorphous silicon thin film; and performing a laser annealing process to convert the amorphous silicon thin film into a polycrystalline silicon thin film through generating a laser irradiation having a spatially periodic intensity distribution to irradiate the amorphous silicon thin film; wherein the spatially periodic intensity distribution comprises a first laser intensity to form a plurality of crystal nuclei regions arranged in an array, and a second laser intensity to form a plurality of epitaxial growth regions, the second laser intensity being greater than the first laser intensity.

Abstract translation: 提供了形成多晶硅薄膜的方法，相关的光学薄膜，相关的多晶硅薄膜和相关的薄膜晶体管。 该方法包括：提供非晶硅薄膜; 以及进行激光退火处理，以通过产生具有空间周期性强度分布的激光照射来将所述非晶硅薄膜转换为多晶硅薄膜，以照射所述非晶硅薄膜; 其中所述空间周期性强度分布包括第一激光强度以形成排列成阵列的多个晶核区域，以及第二激光强度，以形成多个外延生长区域，所述第二激光强度大于所述第一激光强度。