公开(公告)号：WO2016195763A1

公开(公告)日：2016-12-08

申请号：PCT/US2016/016003

申请日：2016-02-01

Applicant: BOISE STATE UNIVERSITY

Inventor： CAMPBELL, Kristy, A.

IPC: H01L45/00

CPC classification number: H01L45/141 ,  G11C13/0069 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/143 ,  H01L45/144 ,  H01L45/16 ,  H01L45/1625

Abstract: A variable resistance memory device (100, 200, 300, 400) includes a first electrode (110, 210, 310) and a second electrode (160, 260, 360). The device may includes a chalcogenide glass (140, 240, 340) layer between the first electrode and the second electrode. The chalcogenide glass layer may include a chalcogenide glass material co-deposited with a metal material. The device also includes a metal ion source structure (150, 250, 350) between the chalcogenide glass layer and the second electrode. The device may include a buffer layer (120, 220) between the first electrode and the chalcogenide glass layer.

Abstract translation: 可变电阻存储器件（100,200,300,400）包括第一电极（110,210,310）和第二电极（160,260,360）。 该装置可以包括在第一电极和第二电极之间的硫族化物玻璃（140,240,340）层。 硫族化物玻璃层可以包括与金属材料共沉积的硫族化物玻璃材料。 该装置还包括在硫族化物玻璃层和第二电极之间的金属离子源结构（150,250,350）。 该装置可以包括在第一电极和硫族化物玻璃层之间的缓冲层（120,220）。

公开(公告)号：WO2008088599A2

公开(公告)日：2008-07-24

申请号：PCT/US2007/082025

申请日：2007-10-19

Applicant: BOISE STATE UNIVERSITY ,  CAMPBELL, Kristy, A.

Inventor： CAMPBELL, Kristy, A.

IPC: H01L45/00

CPC classification number: H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/1683 ,  Y10S977/754

Abstract: Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more that two data states.

Abstract translation: 已经研究了具有包括有源存储器件的两个层叠的硫族化物材料的非易失性存储器件作为相变存储器的潜力。 测试的器件包括GeTe / SnTe，Ge2Se3 / SnTe和Ge2Se3 / SnSe堆叠。 所有器件表现出电阻切换行为。 由于电场引起的Sn或Te向Ge-硫族化物层的移动，相对于SnTe或SnSe层的施加电压的极性对于存储器开关特性至关重要。 本发明的一个实施方案是包含含硫族化物的层的堆叠的装置，其仅在反向极性电压电位施加到堆叠之后才显示出相变切换，导致离子移动到相邻层中，从而“激活”该装置作为 当施加的电压电位恢复到正常极性时，相变随机存取存储器件或可重新配置的电子器件。 本发明的另一实施例是能够表现出更多的两个数据状态的装置。