公开(公告)号：WO2012142126A3

公开(公告)日：2013-05-02

申请号：PCT/US2012033073

申请日：2012-04-11

Applicant: BREWER SCIENCE INC ,  LIN QIN ,  WANG YUBAO ,  FLAIM TONY D

Inventor： LIN QIN ,  WANG YUBAO ,  FLAIM TONY D

IPC: H01L21/027

CPC classification number: G03F7/075 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/0757 ,  G03F7/11 ,  G03F7/20

Abstract: Radiation-sensitive sol-gel compositions are provided, along with methods of forming microelectronic structures and the structures thus formed. The compositions comprise a sol-gel compound and a base generator dispersed or dissolved in a solvent system. The sol-gel compound comprises recurring monomeric units comprising silicon with crosslinkable moieties bonded to the silicon. Upon exposure to radiation, the base generator generates a strong base, which crosslinks the sol-gel compound in the compositions to yield a crosslinked layer that is insoluble in developers or solvents. The unexposed portions of the layer can be removed to yield a patterned sol-gel layer. The invention can be used to form patterns from sol-gel materials comprising features having feature sizes of less than about 1 m.

Abstract translation: 提供了辐射敏感的溶胶 - 凝胶组合物，以及形成微电子结构和如此形成的结构的方法。 组合物包含分散或溶解在溶剂体系中的溶胶 - 凝胶化合物和碱产生剂。 溶胶 - 凝胶化合物包括具有与硅结合的可交联部分的包含硅的重复单体单元。 暴露于辐射后，基底发生器产生强碱，其使组合物中的溶胶 - 凝胶化合物交联，得到不溶于显影剂或溶剂的交联层。 可以除去该层的未曝光部分以产生图案化的溶胶 - 凝胶层。 本发明可以用于形成包含特征尺寸小于约1μm的特征的溶胶 - 凝胶材料的图案。

公开(公告)号：WO2012092139A3

公开(公告)日：2012-10-18

申请号：PCT/US2011066910

申请日：2011-12-22

Applicant: BREWER SCIENCE INC ,  WASHBURN CARLTON ASHLEY ,  LAMB JAMES E III ,  BRAKENSIEK NICKOLAS L ,  LIN QIN ,  WANG YUBAO ,  KRISHNAMURTHY VANDANA ,  SCOTT CLAUDIA

Inventor： WASHBURN CARLTON ASHLEY ,  LAMB JAMES E III ,  BRAKENSIEK NICKOLAS L ,  LIN QIN ,  WANG YUBAO ,  KRISHNAMURTHY VANDANA ,  SCOTT CLAUDIA

IPC: H01L21/027

CPC classification number: H01L21/0337 ,  C09D5/00 ,  G03F7/0035 ,  G03F7/11 ,  G03F7/40 ,  H01L21/0338 ,  Y10T428/24612

Abstract: Methods of forming microelectronic structure are provided. The methods comprise the formation of T-shaped structures using a controlled undercutting process, and the deposition of a selectively etchable composition into the undercut areas of the T-shaped structures. The T-shaped structures are subsequently removed to yield extremely small undercut-formed features that conform to the width and optionally the height of the undercut areas of the T-shaped structures. These methods can be combined with other conventional patterning methods to create structures having extremely small feature sizes regardless of the wavelength of light used for patterning.

Abstract translation: 提供了形成微电子结构的方法。 该方法包括使用受控的底切过程形成T形结构，以及将可选择性蚀刻的组合物沉积到T形结构的底切区域中。 随后移除T形结构以产生非常小的底切形成的特征，其与T形结构的底切区域的宽度和可选地高度相符。 这些方法可以与其他常规图案化方法相结合，以创建具有非常小的特征尺寸的结构，而与用于图案化的光的波长无关。

公开(公告)号：WO2010080789A2

公开(公告)日：2010-07-15

申请号：PCT/US2010020199

申请日：2010-01-06

Applicant: BREWER SCIENCE INC ,  LIN QIN ,  PULIGADDA RAMA ,  CLAYPOOL JAMES ,  GUERRERO DOUGLAS J ,  SMITH BRIAN

Inventor： LIN QIN ,  PULIGADDA RAMA ,  CLAYPOOL JAMES ,  GUERRERO DOUGLAS J ,  SMITH BRIAN

IPC: H01L21/027 ,  G03F7/20

CPC classification number: H01L21/0337 ,  C08G77/20 ,  G03F7/40 ,  H01L21/0338 ,  H01L21/3121

Abstract: Novel double- and triple-patterning methods are provided. The methods involve applying a shrinkable composition to a patterned template structure (e.g., a structure having lines) and heating the composition. The shrinkable composition is selected to possess properties that will cause it to shrink during heating, thus forming a conformal layer over the patterned template structure. The layer is then etched to leave behind pre-spacer structures, which comprise the features from the pattern with remnants of the shrinkable composition adjacent the feature sidewalls. The features are removed, leaving behind a doubled pattern. In an alternative embodiment, an extra etch step can be carried out prior to formation of the features on the template structure, thus allowing the pattern to be tripled rather than doubled.

Abstract translation: 提供了新的双重和三重图案化方法。 所述方法包括将可收缩的组合物应用于图案化的模板结构（例如，具有线的结构）并加热组合物。 可收缩组合物被选择为具有使其在加热期间收缩的性质，从而在图案化模板结构上形成共形层。 然后蚀刻该层以留下预间隔结构，其包含来自图案的特征，其中可收缩组合物的残余物邻近特征侧壁。 功能被删除，留下了一倍的模式。 在替代实施例中，可以在模板结构上形成特征之前执行额外蚀刻步骤，从而允许图案增加三倍而不是加倍。