公开(公告)号：WO2021011196A1

公开(公告)日：2021-01-21

申请号：PCT/US2020/040489

申请日：2020-07-01

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： WARD, William J. ,  CARNES, Matthew E. ,  CUI, Ji ,  HUANG, Helin

IPC: C09G1/02 ,  C09K3/14 ,  B24B37/04

Abstract: The invention relates to a chemical-mechanical polishing composition comprising (a) a first abrasive comprising cationically modified colloidal silica particles, (b) a second abrasive having a Mohs hardness of about 5.5 or more, (c) a cationic polymer, (d) an iron containing activator, (e) an oxidizing agent, and (f) water. The invention also relates to a method of chemically mechanically polishing a substrate, especially a substrate comprising tungsten and barrier layers (e.g., nitrides), with the polishing composition.

公开(公告)号：WO2019070793A1

公开(公告)日：2019-04-11

申请号：PCT/US2018/054079

申请日：2018-10-03

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： CUI, Ji ,  HUANG, Helin ,  DOCKERY, Kevin P. ,  SINGH, Pankaj K. ,  HUANG, Hung-Tsung ,  CHIEN, Chih-Hsien

IPC: C09G1/02 ,  C09G1/04 ,  C09K3/14

Abstract: The invention provides a chemical mechanical polishing composition comprising (a) an abrasive selected from the group consisting of alumina, ceria, titania, zirconia, and combinations thereof, wherein the abrasive is surface coated with a copolymer comprising a combination of sulfonic acid monomeric units and carboxylic acid monomeric units a combination of sulfonic acid monomeric units and phosphonic acid monomeric units, (b) an oxidizing agent, and (c) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical mechanical polishing composition. Typically, the substrate comprises tungsten or cobalt and silicon oxide.

公开(公告)号：WO2018111545A1

公开(公告)日：2018-06-21

申请号：PCT/US2017/063586

申请日：2017-11-29

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： HUANG, Helin ,  CUI, Ji

IPC: H01L21/304 ,  H01L21/02

Abstract: Described is a post- CMP cleaning solution and methods useful to remove residue from a CMP substrate or to prevent formation of residue on a surface of a CMP substrate.

公开(公告)号：WO2017074800A1

公开(公告)日：2017-05-04

申请号：PCT/US2016/058036

申请日：2016-10-21

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： DOCKERY, Kevin ,  HUANG, Helin ,  FU, Lin ,  LI, Tina

IPC: C09G1/02 ,  C09G1/04 ,  C09K3/14 ,  B01J23/745

CPC classification number: C09G1/02 ,  B24B37/24 ,  C23F3/04 ,  C23F3/06

Abstract: Described are chemical-mechanical polishing compositions (e.g., slurries) and methods of using the slurries for chemical-mechanical polishing (or planarizing) a surface of a substrate that contains tungsten, the compositions containing cationic surfactant and cyclodextrin.

Abstract translation: 描述了化学机械抛光组合物（例如浆料）和使用浆料进行化学机械抛光（或平面化）含钨基底表面的方法，所述组合物含有阳离子表面活性剂和 环糊精。

公开(公告)号：WO2020214662A1

公开(公告)日：2020-10-22

申请号：PCT/US2020/028255

申请日：2020-04-15

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： CHIEN, Chih-Hsien ,  LU, Lung-Tai ,  HUANG, Hung-Tsung ,  HUANG, Helin

IPC: C09G1/02 ,  C09K3/14 ,  C09C3/10 ,  B24B37/24

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive comprising silica particles and alumina particles, wherein the alumina particles are surface coated with an anionic polymer, and (b) water. The invention also provides a method of chemically mechanically polishing a substrate, especially a substrate comprising tungsten, silicon oxide, and nitride, with the polishing composition.

公开(公告)号：WO2017120402A1

公开(公告)日：2017-07-13

申请号：PCT/US2017/012427

申请日：2017-01-06

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： DOCKERY, Kevin P. ,  HUANG, Helin ,  CARNES, Matthew ,  WHITENER, Glenn

IPC: C09K3/14 ,  C09G1/02

CPC classification number: C09G1/02 ,  C09G1/04 ,  C09K13/00 ,  C09K13/06 ,  H01L21/31053 ,  H01L21/3212

Abstract: Described are compositions (e.g., slurries) useful in methods for chemical-mechanical processing (e.g. polishing or planarizing) a surface of a substrate that contains tungsten, the slurries containing abrasive particles, metal cation catalyst, phosphorus-containing zwitterionic compound, and optional ingredients such as oxidizer; also described are methods and substrates used or processed on combination with the compositions.

Abstract translation: 描述了用于化学机械加工（例如抛光或平面化）含钨基材表面的方法中的组合物（例如浆料），所述含磨粒的浆液，金属阳离子催化剂，磷 包含两性离子化合物，以及任选的成分如氧化剂; 还描述了与组合物一起使用或加工的方法和基材。

公开(公告)号：WO2017074801A1

公开(公告)日：2017-05-04

申请号：PCT/US2016/058042

申请日：2016-10-21

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： DOCKERY, Kevin ,  HUANG, Helin ,  FU, Lin

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/306 ,  H01L21/321

CPC classification number: C09G1/02 ,  B24B37/24 ,  C23F3/04 ,  C23F3/06

Abstract: Described are chemical mechanical polishing compositions and methods of using the compositions for planarizing a surface of a substrate that contains tungsten, the compositions containing silica abrasive particles and cationic surfactant.

Abstract translation: 描述了化学机械抛光组合物和使用该组合物平面化含钨基材表面的方法，所述组合物含有二氧化硅磨粒和阳离子表面活性剂。