公开(公告)号：WO2009058235A3

公开(公告)日：2009-06-18

申请号：PCT/US2008012173

申请日：2008-10-27

Applicant: LAM RES CORP ,  CERADYNE INC ,  TAYLOR TRAVIS R ,  SRINIVASAN MUKUND ,  KADKHODAYAN BOBBY ,  RAMANUJAM K Y ,  MIKIJELJ BILJANA ,  WU SHANGHUA

Inventor： TAYLOR TRAVIS R ,  SRINIVASAN MUKUND ,  KADKHODAYAN BOBBY ,  RAMANUJAM K Y ,  MIKIJELJ BILJANA ,  WU SHANGHUA

IPC: H01L21/3065

CPC classification number: C04B35/593 ,  C04B2235/3206 ,  C04B2235/3418 ,  C04B2235/72 ,  C04B2235/77 ,  H01J37/32467 ,  H01L21/3065

Abstract: A method of increasing mean time between cleans of a plasma etch chamber and chamber parts lifetimes is provided. Semiconductor substrates are plasma etched in the chamber while using at least one sintered silicon nitride component exposed to ion bombardment and/or ionized halogen gas. The sintered silicon nitride component includes high purity silicon nitride and a sintering aid consisting of silicon dioxide. A plasma processing chamber is provided including the sintered silicon nitride component. A method of reducing metallic contamination on the surface of a silicon substrate during plasma processing is provided with a plasma processing apparatus including one or more sintered silicon nitride components. A method of manufacturing a component exposed to ion bombardment and/or plasma erosion in a plasma etch chamber, comprising shaping a powder composition consisting of high purity silicon nitride and silicon dioxide and densifying the shaped component.

Abstract translation: 提供了增加等离子体蚀刻室清洁和室部件寿命之间的平均时间的方法。 在使用至少一个暴露于离子轰击的烧结氮化硅组分和/或离子化卤素气体的同时，在腔室中等离子蚀刻半导体衬底。 烧结的氮化硅组分包括高纯度氮化硅和由二氧化硅组成的烧结助剂。 提供包括烧结氮化硅部件的等离子体处理室。 在等离子体处理期间减少硅衬底表面上的金属污染的方法由等离子体处理设备提供，所述等离子体处理设备包括一个或多个烧结的氮化硅部件。 一种制造暴露于等离子体蚀刻室中的离子轰击和/或等离子体侵蚀的部件的方法，包括对由高纯度氮化硅和二氧化硅组成的粉末组合物进行成形并使成形部件致密化。

公开(公告)号：WO2011142789A3

公开(公告)日：2014-03-27

申请号：PCT/US2011000104

申请日：2011-01-20

Applicant: CERADYNE INC ,  MIKIJELJ BILJANA

Inventor： MIKIJELJ BILJANA

IPC: C04B35/00

CPC classification number: C04B35/584 ,  C04B35/593 ,  C04B35/5935 ,  C04B35/6261 ,  C04B35/645 ,  C04B35/6455 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3873 ,  C04B2235/3895 ,  C04B2235/5409 ,  C04B2235/668 ,  C04B2235/767 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/85 ,  C04B2235/96 ,  C04B2235/9607

Abstract: Silicon nitride materials with high strength, fracture toughness values, and Weibull moduli simultaneously, due to unique large grain reinforcing microstructures and well engineered grain boundary compositions. The invention demonstrates that, surprisingly and contrary to prior art, a silicon nitride material can be made which simultaneously has high strength above about 850-900 MPa, a Weibull above about 15 and high fracture toughness (above about 8 and 9 MPa.m1/2), and has reinforcing grains longer than 5 μm, typically longer than 10 μm in the microstructure without compromising its properties and reliability. The product of this invention can be processed using a variety of densification methods, including gas-pressure sintering, hot pressing, hot isostatic pressing, but is not limited to these, and does not require multiple heat treatments for all of these features to be achieved.

Abstract translation: 由于独特的大颗粒增强微结构和精心设计的晶界组成，同时具有高强度，断裂韧性值和威布尔模量的氮化硅材料。 本发明表明，与现有技术相反，可以制造氮化硅材料，其同时具有高于约850-900MPa的高强度，高于约15的威布尔和高断裂韧性（高于约8和9MPa.m1 / 2），并且在不损害其性能和可靠性的情况下，在微结构中具有长于5μm的增强晶粒，通常长于10μm。 本发明的产品可以使用各种致密化方法进行加工，包括气压烧结，热压，热等静压，但不限于此，并且不需要多次热处理以实现所有这些特征 。